High Hole Mobility in Triindole-Based Columnar phases: Removing the Bottleneck of Homogeneous Macroscopic Orientation

2013 ◽  
Vol 25 (2) ◽  
pp. 117-121 ◽  
Author(s):  
Angela Benito-Hernández ◽  
Upendra K. Pandey ◽  
Emma Cavero ◽  
Roberto Termine ◽  
Eva M. García-Frutos ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Macroscopic Orientation

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

Packing Effect on the Transfer Integrals and Mobility in α,α′-bis(dithieno[3,2-b:2′,3′-d]thiophene) (BDT) and its Heteroatom-Substituted Analogues

2011 ◽  
Vol 64 (12) ◽  
pp. 1587 ◽  
Author(s):  
Ahmad Irfan ◽  
Abdullah G. Al-Sehemi ◽  
Shabbir Muhammad ◽  
Jingping Zhang
Keyword(s):  
Electron Transfer ◽  
Electron Mobility ◽  
Hole Mobility ◽  
Experimental Investigations ◽  
Hole Transfer ◽  
Space Group ◽  
Space Groups ◽  
Transfer Integrals ◽  
Packing Effect ◽  
Good Agreement

Theoretically calculated mobility has revealed that BDT is a hole transfer material, which is in good agreement with experimental investigations. The BDT, NHBDT, and OBDT are predicted to be hole transfer materials in the C2/c space group. Comparatively, hole mobility of BHBDT is 7 times while electron mobility is 20 times higher than the BDT. The packing effect for BDT and designed crystals was investigated by various space groups. Generally, mobility increases in BDT and its analogues by changing the packing from space group C2/c to space groups P1 or . In the designed ambipolar material, BHBDT hole mobility has been predicted 0.774 and 3.460 cm2 Vs–1 in space groups P1 and , which is 10 times and 48 times higher than BDT (0.075 and 0.072 cm2 Vs–1 in space groups P1 and ), respectively. Moreover, the BDT behaves as an electron transfer material by changing the packing from the C2/c space group to P1 and .

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

scholarly journals Increased hole mobility in anti-ThCr2Si2-type La2O2Bi co-sintered with alkaline earth metal oxides for oxygen intercalation and hole carrier doping

2021 ◽  
Author(s):  
Kota Matsumoto ◽  
Hideyuki Kawasoko ◽  
Noriaki Kimura ◽  
Tomoteru Fukumura
Keyword(s):  
Rare Earth ◽  
Metal Oxides ◽  
Alkaline Earth ◽  
Earth Metal ◽  
Hole Mobility ◽  
Alkaline Earth Metal ◽  
Alkaline Earth Metal Oxides ◽  
Oxygen Intercalation ◽  
Axis Length ◽  
Carrier Doping

Metallic anti-ThCr2Si2-type RE2O2Bi (RE = rare earth) with Bi square nets show superconductivity while insulating La2O2Bi shows high hole mobility, by expanding the c-axis length through oxygen intercalation. In this...

Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds
Keyword(s):  
Density Of States ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Film Growth ◽  
Hole Mobility ◽  
Transport Parameters ◽  
Microcrystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity ◽  
Transport Measurements

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.

Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers

2010 ◽  
Vol 54 (4) ◽  
pp. 420-426 ◽  
Author(s):  
Philippe Gaubert ◽  
Akinobu Teramoto ◽  
Tadahiro Ohmi
Keyword(s):  
Hole Mobility ◽  
Silicon Wafers ◽  
Mos Transistors

Direct Measurement of the Mobiuty-Lifetime Product of Holes and Electrons in an Amorphous Silicon P-I-N Cell

1989 ◽  
Vol 149 ◽  
Author(s):  
Richard. S. Crandall ◽  
Kyle Sadlon ◽  
Jeffrey Kalina ◽  
Alan E. Delahoy
Keyword(s):  
Amorphous Silicon ◽  
Field Model ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Charge Collection ◽  
Uniform Field ◽  
Drift Length ◽  
Direct Measurements ◽  
Hydrogenated Amorphous ◽  
Photovoltaic Behavior

ABSTRACTDirect measurements of the electron and hole mobility-lifetime products, μτ, on a 10μm thick hydrogenated amorphous silicon (a-Si:H) pi- n solar cell are presented. The μτ products, determined from charge collection using strongly absorbed light are μτ|h = 2.2 × 10−8cm2V−1 and μτ|e = 3.0 × 10−7cm2V−1, for holes,and electrons, respectively. Measurements of the drift length, ld = μτ|e + μτ|h, using uniformly absorbed light and analyzed using the uniform field model,1 give ld = 2.9 × 10−7 cm2 V−1 s−1. These results are the first experimental evidence that the carrier with the larger, μτ product determines the photovoltaic behavior. Evidence for space charge limited transport of photogenerated holes is also be presented.

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