XRD and XPS studies of room temperature spontaneous interfacial reaction of CeO2 thin films on Si and Si3N4 substrates

Zn 1-x Fe x O (x = 0.04, 0.06, 0.08, 0.10, 0.12) thin films were grown on Si substrates using reactive magnetron sputtering. X-ray diffraction analyses show that the samples have wurtzite structures with the c-axis orientation. X-ray photoelectron spectroscopy results indicate that the Fe ions are in a +2 charge state in the films. Magnetization measurements indicate that room temperature ferromagnetism is present in films annealed in vacuum while films annealed in air were non-magnetic. The presence of oxygen vacancies in these films may mediate exchange coupling of the dopant ions, resulting in room temperature ferromagnetism.

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Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

MRS Proceedings ◽

10.1557/proc-311-91 ◽

1993 ◽

Vol 311 ◽

Author(s):

T.T. Lee ◽

L.L. Chen

Keyword(s):

Thin Films ◽

Electron Spectroscopy ◽

Room Temperature ◽

Amorphous Layer ◽

Interfacial Reactions ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

State Amorphization ◽

Amorphous Interlayer

ABSTRACTInterfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

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The Intrinsic Room-Temperature Ferromagnetism in ZnO:Co Thin Films Deposited by PLD

Advances in Condensed Matter Physics ◽

10.1155/2012/363981 ◽

2012 ◽

Vol 2012 ◽

pp. 1-5 ◽

Cited By ~ 4

Author(s):

C. C. Wang ◽

B. Y. Man ◽

M. Liu ◽

C. S. Chen ◽

S. Z. Jiang ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Intrinsic Property ◽

Ferromagnetic Behavior ◽

Second Phase ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates

c-axis preferential orientated ZnO:Co thin films were synthesized onc-plane sapphire substrates by using pulsed laser deposition (PLD) technique in an oxygen-deficient ambient. X-ray diffraction spectra, scanning electron microscopy, X-ray photoelectron spectroscopy, energy dispersive spectroscopy, UV-vis transmittance spectra, and Raman spectra were used for characterization. Ferromagnetic behavior was clearly observed at room temperature and verified to be the intrinsic property of the material. The presence of second phase was ruled out.

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Synthesis, morphology and specific magnetization of the electrodeposited Zn-Ni-P thin films on copper substrate from non-cyanide electrolyte

Open Chemistry ◽

10.2478/s11532-013-0236-1 ◽

2013 ◽

Vol 11 (7) ◽

pp. 1137-1149 ◽

Cited By ~ 2

Author(s):

Ana Popescu ◽

Kazimir Yanuskevich ◽

Olga Demidenko ◽

Jose Calderon Moreno ◽

Elena Neacşu ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Copper Substrate ◽

Thin Layers ◽

Specific Magnetization ◽

X Ray Diffraction ◽

X Ray ◽

Potential Use ◽

Scanning Electron

AbstractThin films of Zn-Ni-P on a copper substrate were synthesized by electrodeposition from chloride baths. It was found that the diffraction reflections of the crystal structure of Zn-Ni-P thin layers occur at thicknesses d ≥ 5 µm. The X-ray diffraction studies results confirm the formation in the Zn-Ni-P films of ZnNi10P3 compound. The morphology of the obtained films was analyzed by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS). The films are continuous and have a typical topography with many homogeneous globular features. EDS confirmed the formation of Zn-Ni-P coating only in 2 samples with Zn:Ni:P atomic ratios of 1:8:4 and 4:8:3, respectively. X-ray Photoelectron Spectroscopy (XPS) revealed the chemistry and the thickness of the studied thin films. At room temperature and thickness d ≥ 5 µm the investigated thin layers exhibit high values of the specific magnetizations in the range (25–37) A m2 kg−1, leading to the potential use in devices, appliances and electronics. The Curie temperature values of the synthesized Zn-Ni-P films were determined. It was found that by heating Zn-Ni-P thin layers of thicknesses d ≥ 5 µm up to a temperature T=900 K an interaction was detected with the copper substrate leading to a lower specific magnetization.

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Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.543.277 ◽

2013 ◽

Vol 543 ◽

pp. 277-280

Author(s):

Marius Dobromir ◽

Alina Vasilica Manole ◽

Simina Rebegea ◽

Radu Apetrei ◽

Maria Neagu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rutile Phase ◽

X Ray Diffraction ◽

X Ray ◽

Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

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Synthesis of Magnetic Ferrocene-Containing Polymer with Photothermal Effects for Rapid Degradation of Methylene Blue

Polymers ◽

10.3390/polym13040558 ◽

2021 ◽

Vol 13 (4) ◽

pp. 558

Author(s):

Wenhui Zhu ◽

Caiyun Zhang ◽

Yali Chen ◽

Qiliang Deng

Keyword(s):

Methylene Blue ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Degradation Rate ◽

Model Compound ◽

Vibrating Sample Magnetometer ◽

Simulated Sunlight ◽

X Ray Diffraction ◽

X Ray ◽

Ft Ir

Photothermal materials are attracting more and more attention. In this research, we synthesized a ferrocene-containing polymer with magnetism and photothermal properties. The resulting polymer was characterized by Fourier-transform infrared (FT-IR), vibrating sample magnetometer (VSM), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and thermogravimetric analysis (TGA). Its photo-thermocatalytic activity was investigated by choosing methylene blue (MB) as a model compound. The degradation percent of MB under an irradiated 808 nm laser reaches 99.5% within 15 min, and the degradation rate is 0.5517 min−1, which is 145 times more than that of room temperature degradation. Under irradiation with simulated sunlight, the degradation rate is 0.0092 min−1, which is approximately 2.5 times more than that of room temperature degradation. The present study may open up a feasible route to degrade organic pollutants.

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A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Journal of Materials Science ◽

10.1007/s10853-021-06269-3 ◽

2021 ◽

Author(s):

Tianlei Ma ◽

Marek Nikiel ◽

Andrew G. Thomas ◽

Mohamed Missous ◽

David J. Lewis

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Mixed Valence ◽

Chemical Vapour ◽

X Ray Diffraction ◽

X Ray ◽

Conducting Oxides ◽

Valence States ◽

3 Omega ◽

First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Structure and Conductivity of Iodine-Doped C60 Thin Films

MRS Proceedings ◽

10.1557/proc-359-443 ◽

1994 ◽

Vol 359 ◽

Cited By ~ 1

Author(s):

Jun Chen ◽

Haiyan Zhang ◽

Baoqiong Chen ◽

Shaoqi Peng ◽

Ning Ke ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Room Temperature ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Temperature Conductivity ◽

Room Temperature Conductivity ◽

X Ray ◽

Thermally Activated ◽

Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

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ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

International Journal of Modern Physics B ◽

10.1142/s021797920201083x ◽

2002 ◽

Vol 16 (06n07) ◽

pp. 1047-1051

Author(s):

JIANPING MA ◽

ZHIMING CHEN ◽

GANG LU ◽

MINGBIN YU ◽

LIANMAO HANG ◽

...

Keyword(s):

Electron Microscopy ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Uv Light ◽

X Ray Diffraction ◽

X Ray ◽

Room Temperature Photoluminescence ◽

Composition And Structure ◽

Light Excitation ◽

Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

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