Mechanism of Creation and Destruction of Oxygen Interstitial Atoms by Nonpolar Zinc Oxide(10\bar{1}0) Surfaces
Keyword(s):
Oxygen vacancies (VO) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable VO concentrations. Oxygen interstitials (Oi) move far more rapidly, so post-synthesis...
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