Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer

In this study, the correlation between the Emission Microscopy (Em.Mi.) related to the failure site of the 4H-SiC 650V MOSFET devices after reliability test and epitaxial dislocation defects is presented. Devices failed at the High-Temperature Reverse Bias (HTRB) test were considered. Device layers have been stripped out by chemical wet etching and etched in a high temperature KOH solution to characterize defects emerging at the SiC surface. This approach was used to correlate failure emission spots with underlying structure of the material. KOH etching process on delayered devices was performed at 500°C for 10 minutes and then analysis by optical microscopy and SEM was carried out for defect classification and correlation with failure location.

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The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.840 ◽

2016 ◽

Vol 858 ◽

pp. 840-843 ◽

Cited By ~ 7

Author(s):

Kosuke Uchida ◽

Toru Hiyoshi ◽

Taro Nishiguchi ◽

Hirofumi Yamamoto ◽

Shinji Matsukawa ◽

...

Keyword(s):

High Temperature ◽

Electric Field ◽

Epitaxial Layer ◽

Threading Dislocations ◽

Oxide Breakdown ◽

Temperature Bias ◽

Mixed Dislocation ◽

Weibull Plot ◽

Deep Pit ◽

Drain Bias

The influence of surface pit shape on 4H-SiC double implanted MOSFETs (DMOSFETs) reliability under a high temperature drain bias test has been investigated. Threading dislocations formed two types of pit shapes (deep pit and shallow pit) on an epitaxial layer surface. The cause of the failure was revealed to be an oxide breakdown above the pit generated at the threading mixed dislocation in both pit shapes. Weibull distributions between two types of pits were different. Although the DMOSFETs on the epitaxial layer with the deep pit show longer lifetime than those with the shallow pit, the epitaxial layer with the shallow pit is suitable to estimate the lifetime of the DMOSFETs because of a linearity of the Weibull plot. The lifetime of the DMOSFETs with the shallow pit was dominated by an oxide electric field. The maximum oxide electric field required to obtain the lifetime of more than 10 years was estimated to be 2.7 MV/cm.

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Surface Cross-Hatched Morphology on Strained III-V Semiconductor Heterostructures

MRS Proceedings ◽

10.1557/proc-160-129 ◽

1989 ◽

Vol 160 ◽

Cited By ~ 2

Author(s):

Kevin H. Chang ◽

Ronald Gibala ◽

David J. Srolovitz ◽

Pallab K. Bhattacharya ◽

John F. Mansfield

Keyword(s):

High Temperature ◽

Low Temperature ◽

Surface Morphology ◽

Lattice Mismatch ◽

Semiconductor Heterostructures ◽

Surface Pattern ◽

Textured Surface ◽

Threading Dislocations ◽

Misfit Dislocations ◽

Strained Layer

AbstractThe correlation between surface cross-hatched morphology and interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520°C) and with lattice mismatch f < 2%. A poorly defined cross-hatched morphology is found on layers grown at low temperature (400°C). For f > 2%, a rough textured surface morphology is observed in place of cross hatching. Few threading dislocations are observed in the strained layer when cross hatch develops. Cross hatch occurs after most interfacial misfit dislocations are generated. The results suggest that surface cross hatch is directly related to the generation and glide of interfacial misfit dislocations.

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Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of Oxygen

MRS Proceedings ◽

10.1557/proc-378-629 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 5

Author(s):

Y. H. Qian ◽

J. H. Evans ◽

L. F. Giles ◽

A. Nejim ◽

P. L. F. Hemment

Keyword(s):

High Temperature ◽

Optical Activity ◽

Stacking Faults ◽

Silicon On Insulator ◽

Threading Dislocations ◽

Extended Defects ◽

High Temperature Annealing ◽

Stacking Fault Tetrahedra ◽

Before And After ◽

Dislocation Related Luminescence

AbstractPL and TEM have been carried out on SIMOX structures before and after thinning the silicon overlayer by a process of sacrificial oxidation. The implantation and high temperature annealing schedules involved in fabricating SIMOX material result in threading dislocations and stacking fault tetrahedra and pyramidals in the silicon overlayer. The optical activity of these extended defects is found to be low. However, after the sacrificial oxidation, strong dislocation related luminescence is observed, which is attributed to the presence of oxidation-induced stacking faults now present in the overlayer.

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Influence of Thermo-Mechanical Processing on the Microstructure of Beryllia Dispersed Nickel Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071363 ◽

1973 ◽

Vol 31 ◽

pp. 184-185

Author(s):

M.S. Grewal ◽

S.A. Sastri ◽

N.J. Grant

Keyword(s):

High Temperature ◽

Nickel Alloys ◽

Thermomechanical Processing ◽

Cold Work ◽

High Temperature Strength ◽

Strengthening Effect ◽

Mechanical Processing ◽

Uniform Dispersion ◽

Oxide Particles ◽

Nickel Base

Currently there is a great interest in developing nickel base alloys with fine and uniform dispersion of stable oxide particles, for high temperature applications. It is well known that the high temperature strength and stability of an oxide dispersed alloy can be greatly improved by appropriate thermomechanical processing, but the mechanism of this strengthening effect is not well understood. This investigation was undertaken to study the dislocation substructures formed in beryllia dispersed nickel alloys as a function of cold work both with and without intermediate anneals. Two alloys, one Ni-lv/oBeo and other Ni-4.5Mo-30Co-2v/oBeo were investigated. The influence of the substructures produced by Thermo-Mechanical Processing (TMP) on the high temperature creep properties of these alloys was also evaluated.

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Application of TEM to Deformation, Wear, and Fracture of Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052377 ◽

1974 ◽

Vol 32 ◽

pp. 472-473

Author(s):

B. J. Hockey

Keyword(s):

Wear Resistance ◽

High Temperature ◽

Mechanical Behavior ◽

Brittle Materials ◽

High Temperature Strength ◽

Wide Range ◽

Corrosive Environments ◽

Further Development

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.

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Lattice Imaging of Grain Boundaries in Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078171 ◽

1977 ◽

Vol 35 ◽

pp. 114-115

Author(s):

D. R. Clarke ◽

G. Thomas

Keyword(s):

Mechanical Properties ◽

High Temperature ◽

Silicon Nitride ◽

Grain Boundaries ◽

High Temperature Strength ◽

Current Interest ◽

Lattice Imaging ◽

Special Significance ◽

Structural Applications ◽

Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

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Effect of Improved ThO2 Particle Dispersion in Nickel on High-Temperature Strength

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069211 ◽

1970 ◽

Vol 28 ◽

pp. 444-445

Author(s):

E. R. Kimmel ◽

H. L. Anthony ◽

W. Scheithauer

Keyword(s):

High Temperature ◽

Metal Matrix ◽

Oxide Particle ◽

Oxide Phase ◽

Dislocation Motion ◽

Particle Dispersion ◽

High Temperature Strength ◽

Strengthening Effect ◽

Oxide Particles ◽

The Stability

The strengthening effect at high temperature produced by a dispersed oxide phase in a metal matrix is seemingly dependent on at least two major contributors: oxide particle size and spatial distribution, and stability of the worked microstructure. These two are strongly interrelated. The stability of the microstructure is produced by polygonization of the worked structure forming low angle cell boundaries which become anchored by the dispersed oxide particles. The effect of the particles on strength is therefore twofold, in that they stabilize the worked microstructure and also hinder dislocation motion during loading.

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