Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

2014 ◽  
Vol 115 (16) ◽  
pp. 163503 ◽  
Author(s):  
Matthew R. Semler ◽  
Justin M. Hoey ◽  
Srinivasan Guruvenket ◽  
Cody R. Gette ◽  
Orven F. Swenson ◽  
...  
Keyword(s):  
Film Thickness ◽  
Laser Fluence

Growth and Characterization of Semicontinuous Metal Films by Pulsed Laser Ablation

2001 ◽  
Vol 672 ◽  
Author(s):  
S.K. So ◽  
H.H. Fong ◽  
N.H. Cheung
Keyword(s):  
Laser Ablation ◽  
Film Thickness ◽  
Laser Fluence ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Metal Films ◽  
Sharp Drop ◽  
Favorable Conditions

ABSTRACTSemicontinuous metals films of copper and gold were grown on different substrates by pulsed laser ablation. The resistance and transmittance of these growing metal films were monitored in situ vs film thickness. Despite diverse experimental variations, it was found that both resistance and transmittance exhibited similar behaviors. Around percolation, the resistance exhibited a sharp drop whereas the transmittance exhibited a dip. In general, the onset of percolation depended on laser fluence and substrates. Under favorable conditions, metal films as thin as 1.5 nm would percolate.

Characterization and Control of Copper CMP with Optoacoustic Metrology

2001 ◽  
Vol 671 ◽  
Author(s):  
Michael Gostein ◽  
Paul Lefevre ◽  
Alex A. Maznev ◽  
Michael Joffe
Keyword(s):  
Film Thickness ◽  
Spatial Resolution ◽  
Chemical Mechanical Polishing ◽  
High Spatial Resolution ◽  
Mechanical Polishing ◽  
Length Measurement ◽  
And Control ◽  
Non Destructive

ABSTRACTWe discuss applications of optoacoustic film thickness metrology for characterization of copper chemical-mechanical polishing (CMP). We highlight areas where the use of optoacoustics for CMP characterization provides data complementary to that obtained by other techniques because of its ability to directly measure film thickness with high spatial resolution in a rapid, non-destructive manner. Examples considered include determination of planarization length, measurement of film thickness at intermediate stages of polish, and measurement of arrays of metal lines.

Fabrication of periodic microscale stripes of silver by laser interference induced forward transfer and their SERS properties

2021 ◽  
Author(s):  
Huijuan Shen ◽  
Yaode Wang ◽  
Liang Cao ◽  
Ying Xie ◽  
Lu Wang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Laser Fluence ◽  
Nano Particles ◽  
Good Resolution ◽  
Laser Interference ◽  
Ag Nps ◽  
Wide Range ◽  
Forward Transfer ◽  
Stripe Structure ◽  
Average Size

Abstract The micro-stripe structure was prepared by laser interference induced forward transfer (LIIFT) technique, composed of Ag nano-particles (NPs). The effects of the film thickness with the carbon nano-particles mixed polyimide (CNPs@PI), Ag film thickness, and laser fluence were studied on the transferred micro-stripe structure. The periodic Ag micro-stripe with good resolution was obtained in a wide range of CNPs@PI film thickness from ~ 0.5 μm to ~ 1.0 μm for the Ag thin film ~ 20 nm. The distribution of the Ag NPs composing the micro-stripe was compact. Nevertheless, the average size of the transferred Ag NPs was increased from ~ 41 nm to ~ 197 nm with the change of the Ag donor film from ~ 10 nm to ~ 40 nm. With the increase of the laser fluence from 102 mJ•cm-2 to 306 mJ•cm-2 per-beam, the transferred Ag NPs became aggregative, improving the resolution of the corresponding micro-stripe. Finally, the transferred Ag micro-stripe exhibited the significant surface enhanced Raman scattering (SERS) property for rhodamine B (RhB). While the concentration of the RhB reached 10-10 mol•L-1, the Raman characteristic peaks of the RhB were still observed clearly at 622 cm-1, 1359 cm-1, and 1649 cm-1. These results indicate that the transferred Ag micro-stripe has potential application as a SERS chip in drug and food detection.

Atomic and Molecular Species Post-2 μs Dynamics in Laser-Induced Carbon Plasmas in Air

2020 ◽  
pp. 000370282097160
Author(s):  
Houssyen Yousfi ◽  
Samira Abdelli-Messaci ◽  
Ourida Ouamerali ◽  
Azeddine Dekhira
Keyword(s):  
Laser Fluence ◽  
Nanosecond Laser ◽  
Band Formation ◽  
Plasma Ignition ◽  
A Value ◽  
Recombination Processes ◽  
Density Values ◽  
Specific Temperature ◽  
Carbon Plasma

Laser-induced carbon plasma in air undergoes various physicochemical processes that affect the kinetic chemistry of species of the plasma plume. We report the time- and space-resolved characterization of carbon plasma produced by infrared nanosecond laser into air at atmospheric pressure. Investigating the laser fluence effect highlights dissociation for fluences >40 J cm−2, and recombination processes in the fluence range of 10–40 J cm−2. Emission intensities of C2 and CN molecules undergo an enhancement at specific spatiotemporal locations in the laser-induced plasma. At a value of 27 J/cm2 and 0.8 mm from the plasma ignition, molecular band formation is favored for the specific temperature and density values of 1.7 × 1015 cm−3 and 9502 K. The vibrational temperatures of molecules are determined using nonlinear spectral data fitting program. The shock front between laser-induced carbon plasma and air may lead to a significant shock wave that affects the occurrence of molecular CN and C2 formation. This can be explained by the distinct temperatures exhibited by CN and C2 molecules with laser fluence. The atomic carbon travels farther to react and form C2, where the ionization–recombination process plays a significant role in its formation. Collisions of C with N neutrals and N2 molecules are the plausible origin of CN generation. Moreover, the density of CN in the plasma depends on C2 molecules.

Critical Laser Fluence Observed in (111) Texture, Grain Size and Mobility of Laser Crystallized Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
R.I. Johnson ◽  
G.B. Anderson ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
...  
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Fluence ◽  
Laser Energy ◽  
X Ray ◽  
Peak Intensity ◽  
Silicon Materials ◽  
The Relationship

This paper describes new results on the relationship between the grain size, mobility, and Si (111) x-ray peak intensity of laser crystallized amorphous silicon as a function of the laser fluence, shot density, substrate temperature, and film thickness. These observations include an unexpected narrow peak found in the silicon (111) x- ray peak intensity, which occurs at a specific laser fluence for a given film thickness and substrate temperature. Amorphous silicon materials processed at laser energy densities defined by this peak exhibit exceptionally large grain sizes and electron mobilities that cannot be obtained at any other energy and shot density combination above or below the energy at which the Si (111) x-ray peak intensity maximum occurs.

Morphology characterization of layer-by-layer films from PAH/MA-co-DR13: the role of film thickness

2005 ◽  
Vol 285 (2) ◽  
pp. 544-550 ◽  
Author(s):  
Nara C. de Souza ◽  
Valtencir Zucolotto ◽  
Josmary R. Silva ◽  
Felipe R. Santos ◽  
David S. dos Santos ◽  
...  
Keyword(s):  
Film Thickness ◽  
Layer By Layer ◽  
Morphology Characterization

Preliminary XPS Spectroscopic Characterization of Autoclaved TiNi Shape Memory Alloys for Implants

1993 ◽  
Vol 331 ◽  
Author(s):  
Svetlana A. Shabalovskaya ◽  
J. W. Anderegg ◽  
R. L. C. Sachdeva ◽  
B. N. Harmon
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Shape Memory ◽  
Surface State ◽  
Chemical Etching ◽  
Surface Preparation ◽  
Spectroscopic Characterization ◽  
Water Steam ◽  
Oxide Film Thickness

AbstractThis paper reports a preliminary spectroscopic characterization of the surface elemental and phase compositions of Ti49Ni51 alloy treated using various sterilization procedures (autoclaving in water, steam, sealed envelopes; boiling in water and chemical etching). The surface of TiNi is found to consist of a thin oxide covered by a carbon-dominated contamination layer. The surface oxide of autoclaved samples is (TiO2)xNiy where y varies in the range 0-6 at.% depending on the surface preparation procedure. Minor amounts of suboxides as well as metallic Ni are also detected. Preliminary estimations of the oxide film thickness showed that it varies in the range 7- 26 nm depending on the employed method of sterilization. Mechanisms of surface state formation are briefly discussed.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

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