Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

MRS Proceedings ◽

10.1557/opl.2012.867 ◽

2012 ◽

Vol 1426 ◽

pp. 331-337

Author(s):

Hiroshi Noge ◽

Akira Okada ◽

Ta-Ko Chuang ◽

J. Greg Couillard ◽

Michio Kondo

Keyword(s):

Epitaxial Growth ◽

Heating Temperature ◽

Exothermic Reaction ◽

Epitaxial Films ◽

Si Substrates ◽

Glass Substrates ◽

Good Crystallinity ◽

Crystalline Films ◽

Si Films ◽

First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

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Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

MRS Proceedings ◽

10.1557/opl.2015.828 ◽

2015 ◽

Vol 1770 ◽

pp. 67-72

Author(s):

Vernon K. Wong ◽

A. M. Chitu ◽

A. B. Limanov ◽

James S. Im

Keyword(s):

Epitaxial Growth ◽

Growth Model ◽

Crystal Nucleation ◽

Key Factors ◽

Complete Melting ◽

Melting Regime ◽

Direct Growth ◽

Crystal Core ◽

Excimer Laser Irradiation ◽

Si Films

ABSTRACTWe have investigated the solidified microstructure of nucleation-generated grains obtained via complete melting of Si films on SiO2 at high nucleation temperatures. This was achieved using a high-temperature-capable hot stage in conjunction with excimer laser irradiation. As predicted by the direct-growth model that considers (1) the evolution in the temperature of the solidifying interface and (2) the subsequent modes of growth (consisting of amorphous, defective, and epitaxial) as key factors, we were able to observe the appearance of “normal” grains that possess a single-crystal core area. These grains, which are in contrast to previously reported flower-shaped grains that fully make up the microstructure of the solidified films obtained via irradiation at lower preheating temperatures (and amongst which these “normal” grains emerge), indicate that epitaxial growth of nucleated crystals must have taken place within the grains. We discuss the implications of our findings regarding (1) the validity of the direct-growth model, (2) the nature of the heterogeneous nucleation mechanism, and (3) the alternative explanations and assumptions that have been previously employed in order to explain the microstructure of Si films obtained via nucleation and growth within the complete melting regime.

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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.299 ◽

2006 ◽

Vol 527-529 ◽

pp. 299-302

Author(s):

Hideki Shimizu ◽

Yosuke Aoyama

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Epitaxial Growth ◽

Deposition Rate ◽

Crystalline Structure ◽

Flow Rate ◽

Silicon Substrates ◽

High Quality ◽

Sic Films ◽

Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

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Low-noise X-ray PIN Photodiodes made of perovskite single crystals by Solution-processed dopant incorporated epitaxial growth

Nano Energy ◽

10.1016/j.nanoen.2021.106311 ◽

2021 ◽

pp. 106311

Author(s):

Xin Wang ◽

Yubing Xu ◽

Yuzhu Pan ◽

Yuwei Li ◽

Ji Xu ◽

...

Keyword(s):

Epitaxial Growth ◽

Single Crystals ◽

Low Noise ◽

Solution Processed ◽

X Ray ◽

Pin Photodiodes

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Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

Applied Surface Science ◽

10.1016/j.apsusc.2003.08.034 ◽

2004 ◽

Vol 224 (1-4) ◽

pp. 197-201 ◽

Cited By ~ 6

Author(s):

Youngcheon Jeong ◽

Masao Sakuraba ◽

Junichi Murota

Keyword(s):

Epitaxial Growth ◽

Si Films

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Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.209 ◽

2005 ◽

Vol 483-485 ◽

pp. 209-212

Author(s):

Hideki Shimizu ◽

Kensaku Hisada ◽

Yosuke Aoyama

Keyword(s):

Epitaxial Growth ◽

Flow Rate ◽

Hydrogen Plasma ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Ellipsometric Measurement ◽

X Ray ◽

Hydrogen Radicals ◽

Sic Films ◽

Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

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Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

MRS Proceedings ◽

10.1557/proc-572-185 ◽

1999 ◽

Vol 572 ◽

Author(s):

W. L. Samey ◽

L. Salamanca-Riba ◽

P. Zhou ◽

M. G. Spencer ◽

C. Taylor ◽

...

Keyword(s):

Stacking Faults ◽

Two Dimensional ◽

High Quality ◽

Flow Rates ◽

Si Substrates ◽

Cvd Growth ◽

Polytype Transformation ◽

Si Films ◽

Sic Film ◽

Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

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Crystallization of Intrinsic Amorphous Layers Produced by Stoichiometric Implantation of Al and O Ions in A-Axis Oriented Al2O3 Single Crystals

MRS Proceedings ◽

10.1557/proc-157-543 ◽

1989 ◽

Vol 157 ◽

Cited By ~ 1

Author(s):

W. Zhou ◽

D.X. Cao ◽

D.K. Sood

Keyword(s):

Free Surface ◽

Epitaxial Growth ◽

Single Crystals ◽

Isothermal Annealing ◽

Interface Velocity ◽

Planar Interface ◽

Rapid Crystallization ◽

Substrate Orientation ◽

Prolonged Annealing ◽

Tentative Model

ABSTRACTIsothermal annealing behaviour of intrinsic amorphous layers produced by stoichiometric implantation in a—axis oriented α—Al2O3 single crystals has been studied. The amorphous phase transforms directly to α—Al2O3 at a well defined planar interface which moves towards the free surface. The epitaxial growth slows down after initial rapid crystallization, indicating two separate regimes. The interface velocity shows Arrhenius behaviour in both regimes with activation energies of 0.6 and 0.08 eV respectively. There is an evidence for additional surface or random crystallization into κ or γ-Al2O3 phases within the first few nm on the surface, after prolonged annealing. These results are remarkably different from those reported previously for c–axis oriented Al2O3 crystals, showing the importance of substrate orientation during crystallization. A tentative model to explain the crystallization behaviour is discussed.

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