A general consideration of incident impact energy accumulation in molecular dynamics thin film simulations—a new approach using thermal control layer marching algorithms

2005 ◽  
Vol 461 (2064) ◽  
pp. 3977-3998 ◽  
Author(s):  
Hong-Chang Lin ◽  
Jee-Gong Chang ◽  
Shin-Pon Ju ◽  
Chi-Chuan Hwang
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Reaction Layer ◽  
Incident Energy ◽  
Thermal Control ◽  
Computational Effort ◽  
Energy Accumulation ◽  
Wide Range ◽  
The Impact ◽  
Control Layer

This paper investigates several highly accurate algorithms which can be used to calculate the morphology in a wide range of thin film process simulations, and which require minimum computational effort. Three different algorithms are considered, namely the kinetic energy corrector (KEC) algorithm, the thermal control layer marching (TLM) algorithm, and the thermal control layer marching algorithm with an incorporated KEC function (TLMC). A common characteristic of these algorithms is that they all address the recovery of the impact incident energy within the free reaction layer. However, they differ in their treatment of the thermal control layer. The TLM and TLMC algorithms consider this layer to be moveable, whereas the KEC algorithm regards it as being fixed. The advantage of employing a moveable thermal control layer is that the computational effort required to carry out simulation is reduced since the atoms lying below this layer are excluded. The relative accuracy and efficiency of the proposed algorithms are evaluated by considering their use in the simulation of the trench-filling problem associated with the damascene process. The results of the present investigation indicate that the TLM algorithm has the ability to provide an accurate morphology calculation for low and medium energy incident atoms. However, for higher incident energy impacts, the TLMC algorithm is found to be a more appropriate choice because the incorporated energy corrector function is required to remove the higher energy accumulation which occurs within the deposited atoms. Furthermore, for all three algorithms, it is noted that a suitable specification of the free reaction layer thickness is essential in determining the accuracy and efficiency of the simulation. Finally, this paper discusses the relationship between the energy absorption rate and the thickness of the free reaction layer, and presents the optimal free reaction layer thickness for different incident energy intensities.

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

scholarly journals The Impact of a Paraelectric layer in the FE/DE Stack on Performance of NCFET

2022 ◽  
Author(s):  
Harshit Kansal ◽  
Aditya S Medury
Keyword(s):  
Low Power ◽  
Layer Thickness ◽  
Remnant Polarization ◽  
Design Space ◽  
Performance Parameters ◽  
Analog Performance ◽  
Wide Range ◽  
The Impact ◽  
Tcad Simulations ◽  
Mfis Structure

<div>In this letter, through TCAD simulations, we show that the introduction of a thin paraelectric (PE) layer between the ferroelectric (FE) and dielectric (DE) layers in an MFIS structure, expands the design space for the FE layer enabling hysteresis-free and steep subthreshold behavior, even with a thicker FE layer. This can be explained by analyzing the FE-PE stack from a capacitance perspective where the thickness of the PE layer in the FE-PE stack has the effect of reducing the FE layer thickness, while also reducing the remnant polarization. Finally, for the same FE-PE-DE stack, analog performance parameters such as $\frac{g_{m}} g_{ds}}$ and $\frac{g_{m}}{I_{d}}$ are analyzed, showing good characteristics over a wide range of gate lengths, at low drain voltages, thus demonstrating applicability for low power applications.</div>

Thermal Stability of Thin Virtual Substrates for High Performance Devices

2006 ◽  
Vol 913 ◽  
Author(s):  
Sarah H Olsen ◽  
Steve J Bull ◽  
Peter Dobrosz ◽  
Enrique Escobedo-Cousin ◽  
Rimoon Agaiby ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Raman Spectroscopy ◽  
Layer Thickness ◽  
Critical Thickness ◽  
Great Promise ◽  
Initial Growth ◽  
Strained Si ◽  
Strained Layers ◽  
Wide Range ◽  
The Impact

AbstractDetailed investigations of strain generation and relaxation in Si films grown on thin Si0.78Ge0.22 virtual substrates using Raman spectroscopy are presented. Good virtual substrate relaxation (>90%) is achieved by incorporating C during the initial growth stage. The robustness of the strained layers to relaxation is studied following high temperature rapid thermal annealing typical of CMOS processing (800-1050 °C). The impact of strained layer thickness on thermal stability is also investigated. Strain in layers below the critical thickness did not relax following any thermal treatments. However for layers above the critical thickness the annealing temperature at which the onset of strain relaxation occurred appeared to decrease with increasing layer thickness. Strain in Si layers grown on thin and thick virtual substrates having identical Ge composition and epilayer thickness has been compared. Relaxation through the introduction of defects has been assessed through preferential defect etching in order to verify the trends observed. Raman signals have been analysed by calibrated deconvolution and curve-fitting of the spectra peaks. Raman spectroscopy has also been used to study epitaxial layer thickness and the impact of Ge out-diffusion during processing. Improved device performance and reduced self-heating effects are demonstrated in thin virtual substrate devices when fabricated using strained layers below the critical thickness. The results suggest that thin virtual substrates offer great promise for enhancing the performance of a wide range of strained Si devices.

The Impact of the Layer Thickness on the Thermodynamic Properties of Pd Hydride Thin Film Electrodes

2006 ◽  
Vol 110 (41) ◽  
pp. 20350-20353 ◽  
Author(s):  
Paul Vermeulen ◽  
Alexander Ledovskikh ◽  
Dmitry Danilov ◽  
Peter H. L. Notten
Keyword(s):  
Thin Film ◽  
Thermodynamic Properties ◽  
Layer Thickness ◽  
Thin Film Electrodes ◽  
The Impact

scholarly journals Tailoring Thin-Film/Lacquer Coatings for Space Applications

2000 ◽  
Vol 12 (1) ◽  
pp. 105-112 ◽  
Author(s):  
Wanda C Peters ◽  
George Harris ◽  
Grace Miller ◽  
John Petro
Keyword(s):  
Thin Film ◽  
Thermal Control ◽  
Radiative Properties ◽  
Space Applications ◽  
Solar Absorptance ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Thermal Radiative Properties ◽  
Wide Range ◽  
Specular Surfaces

Thin-film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin-film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission’s thermal control requirements, there is often a need for a variation of solar absorptance (αs), emittance (∊) and/or highly specular surfaces. The utilization of thin-film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of αs/∊ ratios. The radiative properties of thin-film coatings can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin-film application without the cost and difficulty associated with polishing.

scholarly journals The Impact of a Paraelectric layer in the FE/DE Stack on Performance of NCFET

2022 ◽  
Author(s):  
Harshit Kansal ◽  
Aditya S Medury
Keyword(s):  
Low Power ◽  
Layer Thickness ◽  
Remnant Polarization ◽  
Design Space ◽  
Performance Parameters ◽  
Analog Performance ◽  
Wide Range ◽  
The Impact ◽  
Tcad Simulations ◽  
Mfis Structure

<div>In this letter, through TCAD simulations, we show that the introduction of a thin paraelectric (PE) layer between the ferroelectric (FE) and dielectric (DE) layers in an MFIS structure, expands the design space for the FE layer enabling hysteresis-free and steep subthreshold behavior, even with a thicker FE layer. This can be explained by analyzing the FE-PE stack from a capacitance perspective where the thickness of the PE layer in the FE-PE stack has the effect of reducing the FE layer thickness, while also reducing the remnant polarization. Finally, for the same FE-PE-DE stack, analog performance parameters such as $\frac{g_{m}} g_{ds}}$ and $\frac{g_{m}}{I_{d}}$ are analyzed, showing good characteristics over a wide range of gate lengths, at low drain voltages, thus demonstrating applicability for low power applications.</div>

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

THE IMPACT OF LEADERSHIP PRACTICES TO TEAM MEMBERS’ SATISFACTION

2009 ◽  
Vol 8 (1) ◽  
Author(s):  
Chalimah .
Keyword(s):  
Conflict Resolution ◽  
Leadership Practices ◽  
Hotel Industry ◽  
Leader Behavior ◽  
Team Leader ◽  
Shop Floor ◽  
Team Members ◽  
Top Executives ◽  
Wide Range ◽  
The Impact

eamwork is becoming increasingly important to wide range of operations. It applies to all levels of the company. It is just as important for top executives as it is to middle management, supervisors and shop floor workers. Poor teamwork at any level or between levels can seriously damage organizational effectiveness. The focus of this paper was therefore to examine whether leadership practices consist of team leader behavior, conflict resolution style and openness in communication significantly influenced the team member’s satisfaction in hotel industry. Result indicates that team leader behavior and the conflict resolution style significantly influenced team member satisfaction. It was surprising that openness in communication did not affect significantly to the team members’ satisfaction.

Stress, anxiety, depression and burnout in frontline health care workers during COVID-19 pandemic: a brief systematic review and new data from Russia

2021 ◽  
Author(s):  
Ekaterina Mosolova ◽  
Dmitry Sosin ◽  
Sergey Mosolov
Keyword(s):  
Risk Factors ◽  
Systematic Review ◽  
Female Gender ◽  
Assessment Tools ◽  
Care Workers ◽  
Younger Age ◽  
Wide Range ◽  
Associated Risk Factors ◽  
Anxiety Depression ◽  
The Impact

During the COVID-19 pandemic, healthcare workers (HCWs) have been subject to increased workload while also exposed to many psychosocial stressors. In a systematic review we analyze the impact that the pandemic has had on HCWs mental state and associated risk factors. Most studies reported high levels of depression and anxiety among HCWs worldwide, however, due to a wide range of assessment tools, cut-off scores, and number of frontline participants in the studies, results were difficult to compare. Our study is based on two online surveys of 2195 HCWs from different regions of Russia during spring and autumn epidemic outbreaks revealed the rates of anxiety, stress, depression, emotional exhaustion and depersonalization and perceived stress as 32.3%, 31.1%, 45.5%, 74.2%, 37.7% ,67.8%, respectively. Moreover, 2.4% of HCWs reported suicidal thoughts. The most common risk factors include: female gender, nurse as an occupation, younger age, working for over 6 months, chronic diseases, smoking, high working demands, lack of personal protective equipment, low salary, lack of social support, isolation from families, the fear of relatives getting infected. These results demonstrate the need for urgent supportive programs for HCWs fighting COVID-19 that fall into higher risk factors groups.

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