scholarly journals Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

2021 ◽  
Author(s):  
Sarita Misra ◽  
Sudhansu Mohan Biswal ◽  
Biswajit Baral ◽  
Sanjit Kumar Swain ◽  
Sudhansu Kumar Pati
Keyword(s):  
Drain Current ◽  
Rf Circuits ◽  
Superior Performance ◽  
Threshold Region ◽  
Lateral Direction ◽  
Subthreshold Region ◽  
Digital Switching ◽  
Rf Performance ◽  
The Impact ◽  
Rf Performances

Abstract This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the potential, electric field, and velocity of carriers, energy band along the channel is investigated systematically. The present work mainly emphasises on the superior performance of SJLGC MOSFET by showing higher drain current (ID) , transconductance (gm) ,cut off frequency (fT) , maximum frequency of oscillation (fmax) , critical frequency (fK) .The drain current is improved by 10.03 % in SJLGC MOSFET due to the impact of grading the channel. There is an improvement in fT, fmax, fK by 45%, 29% and 18% respectively in SJLGC MOSFET showing better RF Performance. The dominance of the SJLGC MOSFET over SJL MOSFET is further elucidated by showing 74% improvement in intrinsic voltage gain (gm / gds) indicating its better applications in sub threshold region. But the transconductance generation factor of SJLGC MOSFET is less than SJL MOSFET in the subthreshold region. The intrinsic gate delay (ζD) of SJLGC MOSFET is less in comparison to SJL MOSFET due to the impact of lower gate to gate capacitance (CGG) suggesting better digital switching applications. The simulation results reveal that SJLGC MOSFET can be a competitive contender for the coming generation of RF circuits covering a broad range of operating frequencies in RF spectrum.

Analytical modeling of quantization effects in surrounding-gate MOSFETs

2013 ◽  
Vol 33 (1/2) ◽  
pp. 630-644 ◽  
Author(s):  
Vimala Palanichamy ◽  
N.B. Balamurugan
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
Quantum Effects ◽  
Physical Models ◽  
Threshold Region ◽  
Content Type ◽  
Surrounding Gate ◽  
Inversion Charge ◽  
The Impact ◽  
Device Operation

Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages. Practical implications – Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures. Originality/value – This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).

scholarly journals Ambipolar Current Suppression, Analog/RF and Linearity Performance Improvement of Dual Material Stacked Gate Oxide TFET with Dielectric Pocket

2021 ◽  
Author(s):  
dharmender nishad ◽  
kaushal Nigam
Keyword(s):  
Gate Dielectric ◽  
Rf Circuits ◽  
Gate Oxide ◽  
High K ◽  
Ambipolar Current ◽  
High K Dielectric ◽  
Rf Performance ◽  
The Impact ◽  
Dual Material ◽  
Low K

Abstract In this article, the impact of high-K and low-K dielectric pockets on DC, analog/RF, and linearity performance parameters of dual material stacked gate oxide-dielectric pocket-tunnel field-effect transistor (DMSGO-DP-TFET) is investigated. In this regard, a stacked gate oxide (SiO2 + HfO2) with workfunction engineering is taken into consideration to improve the ON-state current (ION ), and suppress the ambipolar current (Iamb). To further improve the performance of the device, a high-K dielectric pocket (HfO2) is used at the drain-channel interface to suppress the Iamb, and at the source-channel interface a low-K dielectric pocket is used to improve the ION and analog/RF performance. Moreover, length of stacked gate segments (L1, L2, L3), pocket height, and thickness are optimized to attain better ION /IOFF ratio, and suppress the Iamb which helps to achieve higher gain and design of analog/RF circuits. The DMSGO-DP-TFET outperforms the dual material control gate-dielectric pocket-TFET (DMCG-DP-TFET) with SiO2 gate oxide and shows increment in ION /IOFF (∼ 4.23 times), 84 % increment in transconductance (gm), 136 % increment in cut-off frequency (fT ), 126 % increment in gain-bandwidth-product (GBP), and better linearity performance parametrs such as gm2 ,gm3, VIP2, VIP3 and IIP3 making the proposed device useful for low power and radio frequency applications.

scholarly journals Work function variations on electrostatic and RF performances of JLSDGM Device

2021 ◽  
Vol 23 (1) ◽  
pp. 150
Author(s):  
K K. E. Kaharudin ◽  
F. Salehuddin ◽  
A. S. M. Zain ◽  
Ameer F. Roslan ◽  
I Ahmad
Keyword(s):  
Work Function ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Systematic Analysis ◽  
Transconductance Amplifier ◽  
Physical Insight ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact ◽  
Rf Performances

This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations.

scholarly journals Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement

2021 ◽  
Author(s):  
Jeetendra Singh ◽  
Archana Verma ◽  
Vijay Kumar Tewari ◽  
Shailendra Singh
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
Performance Enhancement ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Channel Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Performance ◽  
The Impact

Abstract The need of performance enhancement at the RF and millimeter wave is highly desirable to eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable candidate which reduces about 70% channel temperature than sapphire. To achieve high performance, a GaN on the Silicon substrate high electron mobility transistor is designed and its various performance paramters are analyzed by varying the design specifications. Moreover, the problem of blocking voltage improvement is resolved by epitaxial design approach. Since, threshold voltage, doping-level, work-function of gate material and channel length are considered as some of the important parameters while device modeling. Therefore, the impact of these parameters is examined and analyzed to enehace the performance and reliability of the device for RF applications. The performance parameters like trans-conductance, drain current curves are plotted at different state of device physical and electrical parameters. Results exhibits maximum value of transconductance gm=13 milli-mho, minimum gate capacitance Cg=0.5pf, wheras Vth is varied between − 0.25 volts to 0.25 volts.

scholarly journals Radiomics side experiments and DAFIT approach in identifying pulmonary hypertension using Cardiac MRI derived radiomics based machine learning models

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sarv Priya ◽  
Tanya Aggarwal ◽  
Caitlin Ward ◽  
Girish Bathla ◽  
Mathews Jacob ◽  
...  
Keyword(s):  
Machine Learning ◽  
Pulmonary Hypertension ◽  
Feature Selection ◽  
Subgroup Analysis ◽  
Cardiac Mri ◽  
Intraclass Correlation ◽  
Poor Performance ◽  
Superior Performance ◽  
Feature Filtering ◽  
The Impact

AbstractSide experiments are performed on radiomics models to improve their reproducibility. We measure the impact of myocardial masks, radiomic side experiments and data augmentation for information transfer (DAFIT) approach to differentiate patients with and without pulmonary hypertension (PH) using cardiac MRI (CMRI) derived radiomics. Feature extraction was performed from the left ventricle (LV) and right ventricle (RV) myocardial masks using CMRI in 82 patients (42 PH and 40 controls). Various side study experiments were evaluated: Original data without and with intraclass correlation (ICC) feature-filtering and DAFIT approach (without and with ICC feature-filtering). Multiple machine learning and feature selection strategies were evaluated. Primary analysis included all PH patients with subgroup analysis including PH patients with preserved LVEF (≥ 50%). For both primary and subgroup analysis, DAFIT approach without feature-filtering was the highest performer (AUC 0.957–0.958). ICC approaches showed poor performance compared to DAFIT approach. The performance of combined LV and RV masks was superior to individual masks alone. There was variation in top performing models across all approaches (AUC 0.862–0.958). DAFIT approach with features from combined LV and RV masks provide superior performance with poor performance of feature filtering approaches. Model performance varies based upon the feature selection and model combination.

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

scholarly journals Investigating pedestrians’ obstacle avoidance behaviour

2020 ◽  
Vol 5 ◽  
Author(s):  
Abdullah Alhawsawi ◽  
Majid Sarvi ◽  
Milad Haghani ◽  
Abbas Rajabifard
Keyword(s):  
Physical Environment ◽  
Simulation Models ◽  
Avoidance Behaviour ◽  
Movement Direction ◽  
Total Speed ◽  
Lateral Direction ◽  
Video Recordings ◽  
High Speeds ◽  
The Impact ◽  
Pedestrian Simulation

Modelling and simulating pedestrian motions are standard ways to investigate crowd dynamics aimed to enhance pedestrians’ safety. Movement of people is affected by interactions with one another and with the physical environment that it may be a worthy line of research. This paper studies the impact of speed on how pedestrians respond to the obstacles (i.e. Obstacles avoidance behaviour). A field experiment was performed in which a group of people were instructed to perform some obstacles avoidance tasks at two levels of normal and high speeds. Trajectories of the participants are extracted from the video recordings for the subsequent intentions:(i) to seek out the impact of total speed, x and yaxis (ii) to observe the impact of the speed on the movement direction, x-axis, (iii) to find out the impact of speed on the lateral direction, y-axis. The results of the experiments could be used to enhance the current pedestrian simulation models.

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