Smart structural bonding process applied to high speed actuators: an experimental comparative characterization

2020 ◽  
Author(s):  
A. Giraud ◽  
A. Leonardi ◽  
M. Nomdedeu ◽  
F. Martin ◽  
R. Boudineau ◽  
...  
Keyword(s):  
High Speed ◽  
Bonding Process ◽  
Comparative Characterization ◽  
Structural Bonding

scholarly journals Study on the ultrasonic guided wave and online visual monitoring for ultrasonic precise bonding

2021 ◽  
Author(s):  
Yibo Sun ◽  
Mengruo Cao ◽  
Li Zou ◽  
Xinhua Yang
Keyword(s):  
High Speed ◽  
Wavelet Packet ◽  
Melting Zone ◽  
Guided Wave ◽  
Frequency Characteristics ◽  
Bonding Process ◽  
Visual Monitoring ◽  
Time Frequency ◽  
Ultrasonic Bonding ◽  
Ultrasonic Guided Wave

Abstract Ultrasonic precise bonding is an emerging technology in the application of polymer micro-assembly. In the ultrasonic bonding process, the propagation of ultrasound varies with the change of the interfacial polymer physical state. So the ultrasonic guided wave is an effective parameter to in-situ monitor the fusion degree. The ultrasonic guided wave in the ultrasonic bonding process is studied by vibration analysis and online visual monitoring in this paper. The time-frequency characteristics in the ultrasonic guided wave in the bonding process are mainly analyzed by Fast Fourier Transform spectrum analysis, Wavelet Packet Decomposition, and envelope spectrum methods. The polymer interfacial fusion is monitored by the high-speed HD camera in the ultrasonic bonding process. The time-frequency characteristics in the ultrasonic guided wave and the fusion behavior of the thermal melt interface are analyzed and correlated. Results indicate that the change of the interfacial thermal melt state is related to the time-frequency characteristics of the ultrasonic guided wave. The fusion of the melting zone, the rotation of the micro-device, the generation or disappearance of local air bubbles all lead to the changing of the harmonic frequency and intensity in the ultrasonic bonding process.

High-Speed Bonding of Resin-Coated Cu Wire and Sn Electrode with Ultrasonic Bonding for High-Frequency Chip Coil

2005 ◽  
Vol 297-300 ◽  
pp. 2819-2824 ◽  
Author(s):  
Ikuo Shohji ◽  
Tsukasa Sakurai ◽  
Shinji Arai
Keyword(s):  
Surface Roughness ◽  
High Frequency ◽  
High Speed ◽  
Bonding Process ◽  
Bonding Mechanism ◽  
Ultrasonic Bonding ◽  
Bonding Properties ◽  
The Wire ◽  
Bonding Method ◽  
Step Amplitude

High-speed ultrasonic bonding method has been developed to join resin-coated Cu wire on Sn electrodes for high-frequency chip coils. Two-step amplitude method, which decreases the ultrasonic amplitude in the bonding process, was effective to join the resin-coated Cu wire on Sn electrodes. The surface roughness treatment for a bonder head accelerated the deformation of the wire in the bonding process and improve the bondability compared to using the bonder head without that treatment. This paper also describes bonding properties of the joint and the bonding mechanism.

Analysis of Broken Wires during Gold Wire Bonding Process

2012 ◽  
Vol 503 ◽  
pp. 298-302
Author(s):  
Ming Qiang Pan ◽  
Tao Chen ◽  
Li Guo Chen ◽  
Li Ning Sun
Keyword(s):  
High Speed ◽  
Gold Wire ◽  
Wire Bonding ◽  
Bonding Process ◽  
Pressure Wire ◽  
Capillary Tip ◽  
Gold Wires

Wire bonding is one of the critical technologies of devices production, assembly and packaging in the microelectronic and MEMS field. During bonding process, the gold wires break easily, because the wires are repeatedly operated with high-speed. Therefore, the experiments were performed to analyze bonding process and the reason causing wire break. The results show that it is critical to prevent the broken wire to control the pressure wire pressure, the speed and angle of the pulling wire structure, the clamp gap, the capillary tip gap, and discharging energy in bonding process. the broken wire doesn’t occurs when the pressure wire pressure, the speed of the pulling wire structure, the angle of the pulling wire structure, the clamp gap, the capillary tip gap, the time and the current are 3-5g, 5rad/s and 10rad, 0.1-0.3mm, 1mm, 35ms and 10mA , respectively.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Scanning x-ray fluorescence microscopy and principal component analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1752-1753
Author(s):  
Brian Cross
Keyword(s):  
Principal Component Analysis ◽  
Fluorescence Microscopy ◽  
Spatial Resolution ◽  
High Speed ◽  
Image Acquisition ◽  
Principal Component ◽  
Fluorescence Microscope ◽  
Acquisition Rate ◽  
X Ray ◽  
Speed Up

A relatively new entry, in the field of microscopy, is the Scanning X-Ray Fluorescence Microscope (SXRFM). Using this type of instrument (e.g. Kevex Omicron X-ray Microprobe), one can obtain multiple elemental x-ray images, from the analysis of materials which show heterogeneity. The SXRFM obtains images by collimating an x-ray beam (e.g. 100 μm diameter), and then scanning the sample with a high-speed x-y stage. To speed up the image acquisition, data is acquired "on-the-fly" by slew-scanning the stage along the x-axis, like a TV or SEM scan. To reduce the overhead from "fly-back," the images can be acquired by bi-directional scanning of the x-axis. This results in very little overhead with the re-positioning of the sample stage. The image acquisition rate is dominated by the x-ray acquisition rate. Therefore, the total x-ray image acquisition rate, using the SXRFM, is very comparable to an SEM. Although the x-ray spatial resolution of the SXRFM is worse than an SEM (say 100 vs. 2 μm), there are several other advantages.

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