Using standardized simulations, we report a meticulous learning of the Junctionless nanowire with tunneling mechanism and the dependence of Subthreshold slope on operational parameters by varying the channel diameter, Gate length and doping concentration using Synopsys Sentaurus TCAD
simulations. For the first time, Junctionless Nanowire in the company of tunneling architecture is proposed and explored. Our simulation study shows that a decrease in channel diameter and doping concentration results in higher band to band generation and steeper slope. Junctionless tunneling
nanowire of diameter 10 nm, gate length of 20 nm, and uniform doping concentration of 1e19 cm−3 obtains steepest Subthreshold swing of about 8 mV/dec (point) and 52 mV/dec (average), an on/off current ratio of 1010, on current of 10−5
A/um.
Ultrasensitive negative capacitance phototransistors
