A high-performance micro-GRIN-chip spot-size converter formed with focused ion beam

2006 ◽  
Vol 18 (14) ◽  
pp. 1554-1556 ◽  
Author(s):  
H. Yoda ◽  
H. Ikedo ◽  
T. Ketsuka ◽  
A. Irie ◽  
K. Shiraishi ◽  
...  
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size

Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Phase Measurement ◽  
Ion Beam ◽  
Functional Materials ◽  
Phase Shifting ◽  
Future Research ◽  
Electron Holography ◽  
Preparation Technique ◽  
Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

REPLICATION OF NANO/MICRO QUARTZ MOLD BY HOT EMBOSSING AND ITS APPLICATION TO BOROSILICATE GLASS EMBOSSING

2008 ◽  
Vol 22 (31n32) ◽  
pp. 6118-6123 ◽  
Author(s):  
SUNG-WON YOUN ◽  
CHIEKO OKUYAMA ◽  
MASHARU TAKAHASHI ◽  
RYUTARO MAEDA
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Hot Embossing ◽  
High Fidelity ◽  
Borosilicate Glasses ◽  
Mems Devices ◽  
Barrier Layers ◽  
Multiple Copies ◽  
Micro Electromechanical System

Glass hot-embossing is one of essential techniques for the development of high-performance optical, bio, and chemical micro electromechanical system (MEMS) devices. This method is convenient, does not require routine access to clean rooms and photolithographic equipment, and can be used to produce multiple copies of a quartz mold as well as a MEMS component. In this study, quartz molds were prepared by hot-embossing with the glassy carbon (GC) masters, and they were applied to the hot-emboss of borosilicate glasses. The GC masters were prepared by dicing and focused ion beam (FIB) milling techniques. Additionally, the surfaces of the embossed quartz molds were coated with molybdenum barrier layers before embossing borosilicate glasses. As a result, micro-hot-embossed structures could be developed in borosilicate glasses with high fidelity by hot embossing with quartz molds.

PLANAR JOSEPHSON JUNCTIONS FABRICATED BY FOCUSED-ION BEAM

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3359-3360 ◽  
Author(s):  
Hye-Won Seo ◽  
Quark Y. Chen ◽  
Chong Wang ◽  
Wei-Kan Chu ◽  
T. M. Chuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Physical Significance ◽  
Fabrication Technique ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Current Voltage

We have fabricated nano-scaled planar superconductor-insulator-superconductor Josephson junctions using focused ion beam (FIB) with beam spot size ~5 nm . To study the effectiveness of this fabrication technique and for the purpose of comparisons, a variety of samples have been made based on high temperature superconducting (HTS) YBa2Cu3O7-δ electrodes. The insulators are either vacuum or silicon dioxide. The samples showed current-voltage (IV) characteristics typical of a resistively shunted junction (RSJ). We will discuss various aspects of the processing methods and the physical significance of the junction characteristics.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

scholarly journals Polymer micro-lenses as an long-coupling-distance interfacing layer in low-cost optical coupling solution between optical fibers and photonic integrated waveguide circuits

2019 ◽  
Vol 11 (4) ◽  
pp. 121
Author(s):  
Andrzej Kaźmierczak ◽  
Mateusz Słowikowski ◽  
Krystian Pavłov ◽  
Maciej Filipiak ◽  
Ryszard Piramidowicz
Keyword(s):  
Optical Fiber ◽  
Focused Ion Beam ◽  
Low Cost ◽  
Ion Beam ◽  
Single Mode ◽  
Optical Fiber Communication ◽  
Japanese Journal ◽  
Spot Size ◽  
Optical Signal ◽  
Silicon On Insulator

We present a low-cost scheme for non-permanent optical signal coupling for prospective application in single use photonic integrated chips. The proposed scheme exploits the use of polymer kinoform microlenses. The feasibility of the proposed solution is demonstrated by the experimental investigation of the optical signal coupling from single mode optical fiber (SMF) to the test structure of SixNy integrated waveguide. Full Text: PDF ReferencesM. Smit et al., "An introduction to InP-based generic integration technology," Semiconductor Science and Technology, 29 (8), 083001, 2014 CrossRef R. Baets et al., "Silicon Photonics: silicon nitride versus silicon-on-insulator," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2016), paper Th3J.1. CrossRef K. Shiraishi et al., "A silicon-based spot-size converter between single-mode fibers and Si-wire waveguides using cascaded tapers," Appl. Phys. Lett. 91, 141120 (2007) CrossRef Y. Sobu et al., "GaInAsP/InP waveguide dual core spot size converter for optical fiber,"IEEE Photonic Society 24th Annual Meeting, 469-470, (2011). CrossRef F. Van Laere et al., "Compact and Highly Efficient Grating Couplers Between Optical Fiber and Nanophotonic Waveguides," Journal of Lightwave Technology, vol. 25, no. 1, pp. 151-156, Jan. 2007. CrossRef A. Kaźmierczak et al., "Light coupling and distribution or Si3N4/SiO2 integrated multichannel single mode sensing system," Opt. Eng. 48, 2009, pp. 014401 CrossRef M. Rossi et al., "Arrays of anamorphic phase-matched Fresnel elements for diode-to-fiber coupling," Appl. Opt. 34, 2483-2488 (1995) CrossRef M. Prasciolu et al, "Fabrication of Diffractive Optical Elements On-Fiber for Photonic Applications by Nanolitography," Japanese Journal of Applied Physics, Volume 42, (2003) CrossRef F.Schiappelli et al., "Efficient fiber-to-waveguide coupling by a lens on the end of the optical fiber fabricated by focused ion beam milling" Microelectronic Engineering Volumes 73-74, pp.397-404 (2004) CrossRef

The Challenges of FIB Chip Repair and Debug Assistance in the 0.25μm Copper Interconnect Millennium

1998 ◽  
Author(s):  
S.B. Herschbein ◽  
L.S. Fischer ◽  
T.L. Kane ◽  
M.P. Tenney ◽  
A.D. Shore
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Grain Structure ◽  
Long Term Storage ◽  
Wagon Wheel ◽  
Sram Cell ◽  
Oxide Deposition ◽  
Reliable Isolation

Abstract Copper will probably replace aluminum alloys as the interconnect metallurgy of choice for high performance semiconductor devices. This transition will challenge the suitability of established practices in focused ion beam (FIB) chip repair. A fundamental rethink in methodology, techniques, and process gases will be required to deal with the new metal films. This paper discusses the results of recent experiments in the areas of FIB exposure, cuts and connections to buried copper lines. While copper tends to mill faster than aluminum, etch rate variations due to grain structure tend to make reliable isolation cuts more difficult. The films also have been shown to suffer regrowth and surface reactions during long term storage following FIB exposure. Attempts at halogen gas assisted etch (GAE) mills result in undesirable removal characteristics, and in the case of bromine, the spontaneous destruction of all exposed copper in the immediate area. Resistance measurements and reliability of deposited tungsten connections to copper lines are also presented. In addition, the latest techniques developed for aluminum wiring isolation and device characterization are shown. These include 'cleanup' methods for achieving good circuit isolation without the extensive use of local oxide deposition, and the latest multilevel version of the FIB ‘wagon wheel’ for SRAM cell characterization. Also included is preliminary data from a custom built FIB chamber four manipulator prober module.

IIB-2 a novel high-performance MOSFET fabricated using focused ion-beam doping

1984 ◽  
Vol 31 (12) ◽  
pp. 1964-1965
Author(s):  
Y. Waja ◽  
S. Shukuri ◽  
M. Tamura ◽  
H. Masuda ◽  
T. Ishitani
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam

Application of Photoemission Microscopy and Focused Ion Beam Microsurgery to an Investigation of Latchup

1996 ◽  
Author(s):  
D.C. Mayer ◽  
R.J. Ferro ◽  
D.L. Leung ◽  
M.A. Dooley ◽  
J.R. Scarpulla
Keyword(s):  
Integrated Circuit ◽  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Commercial Application ◽  
Input Buffer ◽  
Before And After ◽  
Application Specific Integrated Circuit ◽  
Radiation Induced ◽  
Application Specific

Abstract Radiation-induced latchup sites in a high-performance commercial application-specific integrated circuit (ASIC) manufactured in a bipolar gate array have been identified using a photoemission (PE) microscope before and after isolating individual circuit elements with a focused ion beam (FIB) system. Latchup sites were determined to be associated with grounded unused resistors and transistors in an emitter-coupled logic (ECL) input buffer. Simulation of the oxide isolation scheme confirmed the presence of pnpn structures at the likely latchup sites. A corrective action to redesign the layouts to disconnect unused resistors and transistors resulted in successful elimination of latchup in the ECL buffers.

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