Thermal-electronic device and integrated circuit

2016 ◽  
Author(s):  
J. Mizsei ◽  
J. Lappalainen ◽  
S. Ur ◽  
M. Nemeth ◽  
L. Gaal
Keyword(s):  
Integrated Circuit ◽  
Electronic Device

The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Falster ◽  
D. Gambaro ◽  
M. Olmo ◽  
M. Cornara ◽  
H. Korb
Keyword(s):  
Silicon Wafer ◽  
Integrated Circuit ◽  
Defect Formation ◽  
Electronic Device ◽  
Vacancy Concentration ◽  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation ◽  
Profile Control ◽  
Zone Depth

AbstractA new kind of silicon wafer and a new class of materials engineering techniques for silicon wafers is described. This wafer, called the “Magic Denuded Zone” or MDZ wafer, is produced through the manipulation of the vacancy concentration and, in particular, vacancy concentration depth profiles in the wafer prior to the development of oxygen precipitates in subsequent heat treatments. The result is a wafer with ideal oxygen precipitation behavior for use in all types of integrated circuit applications. The methods used to prepare such wafers combine Frenkel pair generation with injection and the use of surface sinks. Simulations of the vacancy profiles produced by these techniques are presented and discussed. It is shown that within the range of vacancy concentration accessible by these techniques (up to ca. 1013 cm−3) the rate and oxygen concentration dependence of oxygen clustering can be substantially modified. Such techniques can be used to precisely engineer unique and desirable oxygen-related defect performance in silicon wafers both in terms of distribution and rate of defect formation. One result of the application of such techniques is an ideally precipitating silicon wafer in which the resulting oxygen precipitate profile (denuded zone depth and bulk density of precipitates) is independent of the concentration of oxygen of the wafer, the details of the crystal growth process used to prepare the wafer and, to a very large extent, the details of thermal cycles used to process the wafer into an electronic device. Optimal, generic and reliable internal gettering performance is achieved in such a wafer

An Overview of Integrated Circuit Device Encapsulants

1989 ◽  
Vol 111 (2) ◽  
pp. 97-107 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Electronic Device ◽  
Rapid Development ◽  
Polymer Materials ◽  
Organic Polymer ◽  
Small Scale ◽  
Steady Increase ◽  
Chip Size ◽  
Scale Integration

The rapid development of integrated circuit technology from small-scale integration (SSI) to very large scale integration (VLSI) has had great technological and economical impact on the electronics industry. The exponential growth of the number of components per IC chip, the exponential decrease of device dimensions, and the steady increase in IC chip size have imposed stringent requirements, not only on the IC physical design and fabrication, but also on IC encapsulants. This report addresses the purpose of encapsulation, encapsulation techniques, and a general overview of the application of inorganic and organic polymer materials as electronic device encapsulants.

Thermo-Viscoelastic Analysis of Deflection in CSP Electronic Device Packages

2003 ◽  
Vol 125 (3) ◽  
pp. 414-419 ◽  
Author(s):  
Hideo Koguchi ◽  
Chie Sasaki ◽  
Kazuto Nishida
Keyword(s):  
Integrated Circuit ◽  
Electronic Device ◽  
Plate Theory ◽  
Bonding Temperature ◽  
Temperature History ◽  
Viscoelastic Analysis ◽  
Chip Scale Package ◽  
Multilayered Plates ◽  
Bonding Technology ◽  
Method Analysis

In the present paper, a deformation induced in a new bonding technology of chip-scale package (CSP) using resin encapsulation sheets is examined numerically and experimentally. Deflections after cooling from a bonding temperature are measured experimentally for various kinds of substrate and the thickness of an integrated circuit using a laser beam. In particular, a simple theory on the basis of a multilayered plate theory considering a viscoelastic property in the substrate is presented, and the thermo-viscoelastic analysis for the deflection of CSP is performed. Furthermore, the thermo-elastoplastic finite element method analysis is performed under the same temperature history. We could show that the simple formula for multilayered plates based on the thermo-viscoelatic theory can estimate fairly well the deflection of CSP in experiment.

scholarly journals Energy Management Integrated Circuit for Multi-Source Energy Harvesters in WBAN Applications

2018 ◽  
Vol 8 (8) ◽  
pp. 1262 ◽  
Author(s):  
Sung-Eun Kim ◽  
Taewook Kang ◽  
Kwang-Il Oh ◽  
Mi Park ◽  
Hyung-Il Park ◽  
...  
Keyword(s):  
Energy Management ◽  
Integrated Circuit ◽  
Electronic Device ◽  
Wireless Body Area Network ◽  
Oxide Semiconductor ◽  
Operating Efficiency ◽  
Area Network ◽  
Energy Harvesters ◽  
Wearable Electronic Device ◽  
Wide Range

This paper presents an energy management integrated circuit for multiple energy harvesters in wireless body area network applications. The electrical power acquired from a single energy harvester around a human body is limited to micro watts, which is insufficient to drive a wearable electronic device. To increase this small amount, the energy from a number of harvesters has to be combined. By combining the energy from multiple distributed harvesters, each one producing negligible energy, significant energy for wearable devices can be obtained. In designing an energy management circuit for a wearable device, there are two issues to be resolved. The first is related to the power consumption of the circuit, and the second issue is related to the methods needed to manage the wide range of power that occurs as the energy input changes during harvesting. In this paper, an energy management circuit that resolves the two issues above is described. The circuit was integrated using 0.13 µm Taiwan Semiconductor Manufacturing Company complementary metal-oxide-semiconductor technology. The energy management circuit is designed to combine up to three sources of harvested energy with more than 90% operating efficiency over the entire power range of the energy harvested.

scholarly journals MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR

2020 ◽  
Vol 5 (2) ◽  
pp. 294-300
Author(s):  
Brijendra Mishra ◽  
Vivek Singh Kushwah ◽  
Rishi Sharma
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Functional Model ◽  
Single Electron ◽  
Switched Capacitor ◽  
Single Electron Transistor

In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better device will be formed with the help of new technology, with high operating speed low and power consumption, which can be the future of electronics industry. A methodology for the electric simulation of MOS/SET hybrid circuits will be developed. As a result of this, a functional model for the single-electron transistor will obtain and Implement Switched Capacitor Filter with the help of designed hybrid MOS. The SET model can be easily coded in any hardware description language.

scholarly journals Non-conventional Covid treatment methods 19

2021 ◽  
Vol 6 (2) ◽  
pp. 78-82
Author(s):  
Adam Adamski
Keyword(s):  
Integrated Circuit ◽  
Electronic Device ◽  
Chemical Compounds ◽  
Living Organism ◽  
Structural Elements ◽  
Biological Structure ◽  
Quantum Processes ◽  
Bioelectronic Device ◽  
Integrated Device ◽  
Chemical Formulas

In bioelectronic terms, the organism is understood as an integrated circuit of biological piezo, pyroelectrics, ferromagnets and semiconductors, filled with bioplasm and managed electronically by quantum processes. The presence of semiconductors in a biological system is synonymous with the presence of an electronic integrated device, therefore a living organism can be seen as a complex electronic device, analogous to technical devices. Proteins, DNA, RNA, melanin from the biology side, it is a biological structure, from the biochemistry side, they are chemical compounds with different chemical formulas, again from the bioelectronics side it is an electronic material that can serve as structural elements in a bioelectronic device which is an organism. Enzyme transistors were constructed in technical devices from these materials.1

Electronic Cone Illumination with the Conventional Transmission Electron Microscope

1977 ◽  
Vol 35 ◽  
pp. 72-73
Author(s):  
William Krakow
Keyword(s):  
Electronic Device ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Lissajous Figures ◽  
High Resolution Images ◽  
Imaging Mode ◽  
Diffraction Patterns ◽  
Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

1976 ◽  
Vol 34 ◽  
pp. 572-573
Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley
Keyword(s):  
Electronic Device ◽  
Point Sources ◽  
High Contrast ◽  
Variable Resistor ◽  
Quality Of Results ◽  
Low Contrast ◽  
Evaporation Source ◽  
And Control ◽  
At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Sign in / Sign up

Export Citation Format

Share Document