High-voltage stress test paradigms of analog CMOS ICs for gate-oxide reliability enhancement

The authors reported the DMOSFETs fabricated on the 4H-SiC(0-33-8) in ECSCRM2012 and the novel V-groove MOSFETs, having (0-33-8) on the trench sidewall in ICSCRM2013. In this paper, we applied both the thick bottom oxide and the buried p+ regions to the V-groove MOSFETs for the protection of the trench bottom oxide. The V-groove MOSFET showed the low specific on-resistance of 3.2 mΩcm2 and the high blocking voltage of 1700 V on the bounty of the high channel mobility and the gate oxide protection, respectively. We also tested the gate oxide reliability of the V-groove MOSFET by constant-voltage stress TDDB measurement. The charge-to-breakdown was 18.0 C/cm2 at room temperature and 4.4 C/cm2 at 145°C. In addition, the stability of the threshold voltage was characterized with the VMOSFETs.

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Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3532820 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AB08 ◽

Cited By ~ 5

Author(s):

T. Erlbacher ◽

V. Yanev ◽

M. Rommel ◽

A. J. Bauer ◽

L. Frey

Keyword(s):

Atomic Force Microscopy ◽

Gate Oxide ◽

Constant Voltage ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Oxide Reliability ◽

Voltage Stress

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Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

Microelectronics Reliability ◽

10.1016/0026-2714(95)93078-o ◽

1995 ◽

Vol 35 (3) ◽

pp. 603-608 ◽

Cited By ~ 16

Author(s):

S.R. Anderson ◽

R.D. Schrimpf ◽

K.F. Galloway ◽

J.L. Titus

Keyword(s):

Ion Irradiation ◽

Gate Oxide ◽

Heavy Ion ◽

Irradiation Effects ◽

Power Mosfets ◽

Heavy Ion Irradiation ◽

Oxide Reliability

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Novel High-Efficiency High Step-Up DC–DC Converter with Soft Switching and Low Component Voltage Stress for Photovoltaic System

Processes ◽

10.3390/pr9071112 ◽

2021 ◽

Vol 9 (7) ◽

pp. 1112

Author(s):

Yu-En Wu ◽

Jyun-Wei Wang

Keyword(s):

High Voltage ◽

Output Voltage ◽

High Efficiency ◽

Low Voltage ◽

Leakage Inductance ◽

Power Switch ◽

Half Wave Voltage ◽

Half Wave ◽

Voltage Stress ◽

Voltage Doubler

This study developed a novel, high-efficiency, high step-up DC–DC converter for photovoltaic (PV) systems. The converter can step-up the low output voltage of PV modules to the voltage level of the inverter and is used to feed into the grid. The converter can achieve a high step-up voltage through its architecture consisting of a three-winding coupled inductor common iron core on the low-voltage side and a half-wave voltage doubler circuit on the high-voltage side. The leakage inductance energy generated by the coupling inductor during the conversion process can be recovered by the capacitor on the low-voltage side to reduce the voltage surge on the power switch, which gives the power switch of the circuit a soft-switching effect. In addition, the half-wave voltage doubler circuit on the high-voltage side can recover the leakage inductance energy of the tertiary side and increase the output voltage. The advantages of the circuit are low loss, high efficiency, high conversion ratio, and low component voltage stress. Finally, a 500-W high step-up converter was experimentally tested to verify the feasibility and practicability of the proposed architecture. The results revealed that the highest efficiency of the circuit is 98%.

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