Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling
Keyword(s):  
Integrated Circuits ◽  
Hall Effect ◽  
Output Voltage ◽  
Mathematical Expression ◽  
Plane Shear ◽  
Plane Normal ◽  
Offset Voltage ◽  
Stress Sensors ◽  
Van Der Pauw ◽  
The Difference

Under the proper orientations and excitations, the transverse output of rotationally symmetric four-contact van der Pauw (VDP) stress sensors depends upon only the in-plane shear stress or the difference of the in-plane normal stresses on (100) silicon. In bridge-mode, each sensor requires only one four-wire measurement and produces an output voltage with a sensitivity that is 3.16 times that of the equivalent resistor rosettes or bridges, just as in the normal VDP sensor mode that requires two separate measurements. Both numerical and experimental results are presented to validate the conjectured behavior of the sensor. Similar results apply to sensors on (111) silicon. The output voltage results provide a simple mathematical expression for the offset voltage in Hall effect devices or the response of pseudo Hall-effect sensors. Bridge operation facilitates use of the VDP structure in embedded stress sensors in integrated circuits.

Four-Wire Bridge Measurements of van der Pauw Stress Sensors on (100) and (111) Silicon

2013 ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling
Keyword(s):  
Shear Stress ◽  
Normal Stress ◽  
Normal Stress Difference ◽  
Stress Difference ◽  
Plane Shear ◽  
Plane Normal ◽  
Stress Sensors ◽  
Van Der Pauw ◽  
Contact Sensors

Four-wire resistance characterization of van der Pauw stress sensors is discussed. Under the proper orientations and excitations, the output of the four-contact sensors can be shown to depend upon only the in-plane shear stress or the in-plane normal stress difference on (100) silicon. The other stress terms are cancelled out by the symmetry of the structure, and the measurements are inherently temperature compensated. In bridge-mode, each sensor requires only one measurement and produces an output voltage that is directly proportional to the shear stress or in-plane normal stress difference, and the sensitivity is 3.16 times that of the equivalent resistor sensors, just as in the normal van der Pauw mode. Experimental, theoretical, finite-difference and finite-element and simulation results are presented demonstrating the behavior of the sensor. The two sensors can be merged into one eight-contact device, or n- and p-tye sensors can be overlaid in standard IC processes. Similar results apply to sensors on (111) silicon.

Design and Calibration of Resistive Stress Sensors on 4H Silicon Carbide

2018 ◽  
Author(s):  
Richard C. Jaeger ◽  
Jun Chen ◽  
Jeffrey C. Suhling ◽  
Leonid Fursin
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Stress Sensitivity ◽  
Well Drilling ◽  
Deep Well ◽  
Stress Sensors ◽  
Wide Range ◽  
Higher Temperature ◽  
Van Der Pauw ◽  
Transverse Piezoresistance

Stress sensors have shown potential to provide “health monitoring” of a wide range of issues related to packaging of integrated circuits, and silicon carbide offers the advantage of much higher temperature sensor operation with application in packaged high-voltage, high-power SiC devices as well as both automotive and aerospace systems, geothermal plants, and deep well drilling, to name a few. This paper discusses the theory and uniaxial calibration of resistive stress sensors on 4H silicon carbide (4H-SiC) and provides new theoretical descriptions for four-element resistor rosettes and van der Pauw (VDP) stress sensors. The results delineate the similarities and differences relative to those on (100) silicon: resistors on the silicon face of 4H-SiC respond to only four of the six components of the stress state; a four-element rosette design exists for measuring the in-plane stress components; two stress quantities can be measured in a temperature compensated manner. In contrast to silicon, only one combined coefficient is required for temperature compensated stress measurements. Calibration results from a single VDP device can be used to calculate the basic lateral and transverse piezoresistance coefficients for 4H-SiC material. Experimental results are presented for lateral and transverse piezoresistive coefficients for van der Pauw structures and p- and n-type resistors. The VDP devices exhibit the expected 3.16 times higher stress sensitivity than standard resistor rosettes.

Experimental Determination of the Two-Dimensional State of Stress and the Orthotropic Elasticity Coefficients for Coatings

1990 ◽  
Vol 203 ◽  
Author(s):  
Richard J. Farris ◽  
M. A. Maden ◽  
K. Tong
Keyword(s):  
Elastic Constants ◽  
Physical Property ◽  
The State ◽  
Normal Stresses ◽  
Free Standing ◽  
Vibrationally Excited ◽  
Plane Shear ◽  
Plane Normal ◽  
State Of Stress ◽  
The One

ABSTRACTThe state of stress for a uniform coating away from the edges reduces to that of plane stress, two in-plane normal stresses, and an in-plane shear stress. For this state, the interface between the coating and the substrate is totally stress free. Since the substrate and the coating are not interacting mechanically, an internal section of the substrate can be removed creating a tensioned drum-like membrane without altering the stress state. Holographic interferometry of vibrationally excited membranes is used to evaluate the stress. Using this technique, up to thirty vibrational modes can be obtained. This high degree of redundancy enables one to determine the one shear and two normal stresses that act in the plane of the coating. The only physical property requires is the coating density. The density is obtained from commonly reported literature values. Simple variations on the membrane vibration scheme, e.g., cutting the membrane to create a uniaxially tensioned ribbon, enables one to determine the in-plane Poisson's ratio and shearmodulus.In separate but related experiments on commercially made free-standing films with residual orientation, the above techniques, combined with special free and axially constrainedcompressibility experiments should enable all of the Poisson's ratios and elasticmoduli for an orthotropic material (nine elastic constants) to be determined. Methods for measuring the state of stress and the elastic constants are required to predict the state of stress in complex coating geometries.

Improving Turret Control on Military Vehicles

2009 ◽  
Author(s):  
Thomas W. Anderson ◽  
Nathaniel A. Clark ◽  
Wesley E. Kotz ◽  
Briana D. Stremick ◽  
O¨zer Arnas ◽  
...  
Keyword(s):  
Hall Effect ◽  
Output Voltage ◽  
Magnetic Force ◽  
Electric Signal ◽  
Similar Response ◽  
Hall Effect Sensor ◽  
Military Vehicles ◽  
Tactical Vehicle ◽  
The Magnetic Field ◽  
Mechanical Assistance

Recent additions of armor have made light tactical vehicle turrets heavy enough that mechanical assistance is required for them to rotate. The Army’s solution is the Battery Powered Motorized Traversing Unit (BPMTU) which uses a joystick to traverse the turret. Use of the joystick distracts the gunner and prevents the gunner from continuously engaging the target while rotating the turret. This paper presents a modification to the weapon mount that allows the turret to be controlled by the position of the weapon itself and emphasizes the design process used to develop the inovation. With this design, the gunner can now maintain contact with a target, while rotating the turret, without fiddling with the joystick. The Weapon Activated and Controlled Turret (WACT) consists of two primary components; the bottom component is stationary relative to the turret and contains a Hall effect sensor and the top component rotates with the weapon and holds a linear magnet. As the position of the sensor relative to the magnet changes, the corresponding strength of the magnetic field also varies. This change in magnetic force induces a similar response in the output voltage of the Hall effect sensor, effectively translating rotational motion into an electric signal able to control the turret motor.

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

scholarly journals EFFECTS OF THE TEMPERATURE ON THE OUTPUT VOLTAGE OF MONO-CRYSTALLINE AND POLY-CRYSTALLINE SOLAR PANELS

SINERGI ◽  
2019 ◽  
Vol 24 (1) ◽  
pp. 73 ◽  
Author(s):  
Hamzah Eteruddin ◽  
Atmam Atmam ◽  
David Setiawan ◽  
Yanuar Z. Arief
Keyword(s):  
Solar Energy ◽  
Output Voltage ◽  
Alternative Energy ◽  
Solar Panel ◽  
Solar Panels ◽  
Solar Module ◽  
Temperature Changes ◽  
The Difference

People can make solar energy alternative energy by employing solar panels to generate electricity. The utilization of solar energy on a solar panel to generate electricity is affected by the weather and the duration of the radiation, and they will affect the solar panel’s temperature. There are various types of solar panels that can be found on the market today, including Mono-Crystalline and Poly-Crystalline. The difference in the material used needs to be observed in terms of temperature changes in the solar module. Our study’s findings showed that a change in the temperature would impact the solar panel’s output voltage, and the solar panel’s output voltage would change when it was connected to the load although the measured temperatures were almost the same.

scholarly journals RANCANGBANGUN RANGKAIAN INVERTER SPWM UNIPOLAR 1 FASA DENGAN PENGATURAN FREKUENSI OUTPUT

2021 ◽  
Vol 9 (1) ◽  
pp. 46-49
Author(s):  
Fathoni ◽  
Agus Pracoyo ◽  
Totok Winarno ◽  
Rizal Sabillah
Keyword(s):  
Output Voltage ◽  
Test Results ◽  
Motor Speed ◽  
Output Frequency ◽  
Ac Motor ◽  
Power Part ◽  
The Difference ◽  
The Right ◽  
Frequency Variations

Changing the dc sgnal to ac signal is done for te purpose of load regulations, such as the ac motor speed, heater and lamp. Inverter work is done by ac rectification first and then converted again to a 1 phase ac signal. The ac output signal is a sinosoidal PWM (SPWM) type of unipolar 220 volts from the input 24 volt dc voltage. Unipolar SPWM signal generation is done by a microcontroller with programming. The number of counts (resolutions) of the SPWM signal and the period are set from the amount in the register, can be set to 8 bits or other constants. The power part of the SPWM inverter is the N channel MOSFET bridge circuit H with IR2110 solid state driver. Step transformer as a load while step-up the inverter output voltage. Determination of the output frequency is set through a rotary encoder that can be adjusted up (increment) or down (decrement). There are 5 frequency variations, namely 30, 40, 50, 60 and 70 Hz. To get the inverter efficiency, the type of MOSFET used is chosen to have the type that has a low RDS (on) value and the right driving pulse, according to the switch configuration. Measurement of the output frequency is done by reading the image on the osciloscope. The observations show a frequency value that is almost the same as the constant. The test results show the difference in output voltage which is reduced at a 30 watt load.

scholarly journals Influence of the Power Generation Capacity of the Structural Parameters of a Piezoelectric Bimorph

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Xiaochao Tian ◽  
Jinzhi Zhu ◽  
Zhicong Wang ◽  
Hu Wang ◽  
Yuze Sun ◽  
...  
Keyword(s):  
Power Generation ◽  
Integrated Circuits ◽  
Energy Supply ◽  
Output Voltage ◽  
Structural Parameters ◽  
Electronic Devices ◽  
Generation Effect ◽  
Modulus Ratio ◽  
Piezoelectric Vibrator ◽  
Generation Capacity

With the popularization of integrated circuits, MEMS, and portable electronic devices, chemical batteries have many disadvantages as the main energy supply method, such as large size, high quality, and limited energy supply life, requiring regular replacement, resulting in waste of materials, environmental pollution, and other issues. From the above reasons, energy harvesting technology plays an important role in improving the efficiency and life of electronic equipment. In order to explore the influence of the bimorph piezoelectric vibrator’s structural parameters on the power generation capacity, this paper establishes a cantilever beam rectangular bimorph piezoelectric vibrator power generation model, derives the mathematical expression of the bimorph piezoelectric vibrator power generation, and determines the parameter factors that affect the power generation effect. Using MATLAB simulation analysis to obtain the influence relationship curve of system output voltage and structural parameters, the experiment tests the influence law of output voltage and thickness ratio, width-to-length ratio, and Young’s modulus ratio; the test results are consistent with the theoretical analysis, verifying the theory and the correctness of the analysis. The results show that when the thickness ratio is 0.58 and the width-to-length ratio is 1, the power generation effect of the piezoelectric vibrator is the best to reach 14.5V; the power generation capacity of the transducer is inversely proportional to Young’s modulus ratio. This research provides a new idea for the popularization of integrated circuits, MEMS, and portable electronic devices.

Experimental Study on Differentiating between Natural Honey and Honey Glucose Syrup by Using Hall Effect Sensor

2018 ◽  
Vol 775 ◽  
pp. 231-237
Author(s):  
Witsarut Sriratana ◽  
Siwakon Sokjabok ◽  
Lerdlekha Sriratana
Keyword(s):  
Electromagnetic Field ◽  
Hall Effect ◽  
High Frequency ◽  
Output Voltage ◽  
Electrical Conductance ◽  
Magnetic Core ◽  
Hall Effect Sensor ◽  
Sugar Substitute ◽  
Glucose Syrup ◽  
Natural Honey

This study presents the application of Hall Effect sensor for differentiating the combination of liquids based on electrical conductance. Electromagnetic field was generated from wire (AWG 31) bound on high frequency magnetic core namely Toroidal iron power (T131-26) or C-shape Toroidal core. In this study, the electrochemical cell was fixed at 0.09375 cm-1 and there were 10 samples of several liquid types for testing. Hall Effect sensor was designed to place with high frequency magnetic cores bound by 310-turns wire. From experiment using electromagnetic field generated by C-shape Toroidal core, it can be observed that the samples of natural honey from Germany (J) and sugar substitute for diabetics (I) could be distinguished by considering output voltage of Hall Effect sensor (VH) and electrical conductance. The output voltage and the electrical conductance from measurement of natural honey (J) were 3.037 V and 0.941 mS.T, respectively while those from measurement of sugar substitute (I) were 3.030 V and 0.938 mS.T, respectively. Moreover, it can be noted that this methodology could be applied for measuring electrical conductance of several liquid types due to the relationships of output voltage of Hall Effect sensor and electrical conductance of liquid. However, only C-shape Toroidal core was used in this study due to the appropriate generation of electromagnetic field for differentiating both sample liquid types with 1.83% of error for natural honey and 1.51% of error for sugar substitute from 195 times of repetitive measurement.

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