Fast Copper Plating Process for Through Silicon Via (TSV) Filling

2011 ◽  
Author(s):  
Su Wang ◽  
S. W. Ricky Lee
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Three Dimensional ◽  
Optical Microscope ◽  
Copper Plating ◽  
Ray Method ◽  
Plating Bath ◽  
Bottom Up ◽  
Electroplating Process ◽  
Filling Mechanism

There is an increasing demand for electronic devices with smaller sizes, higher performance and increased functionality. The development of vertical interconnects or through silicon vias (TSV) may be one of the most promising approaches to provide the three-dimensional (3D) integration of integrated circuits (IC). It is possible to improve the system’s performance with shorter RC delay, shorter signal paths and less power consumption. Electroplating process is one of the major contributors to the cost of TSV. Thus, plating time is one of our major concerns in TSV applications. About 80% of the TSVs are filled with copper due to its high conductivity and wide applications in multilayer wiring. Even though the electroplating of copper for interconnections is well established for the copper damascene micro-fabrication process, it has been shown that the filling of TSVs with copper plating is a different situation due to the much larger dimensions of TSVs. Generally the filling mechanism consists of conformal plating and bottom up plating. A 100% bottom up filling is preferred for copper filling in TSV. A seam may exist in via if the majority of filling mechanism is conformal plating. Thus, the bottom up filling profile is one the critical points to achieve void free filling. In this study, the void free copper filling TSVs with diameter from 10–30 m and depth from 50–150 m will be investigated by copper electroplating. A near 100% bottom up plating formula was developed in order to achieve void free and seam free filling. Filling performance of this plating formula was evaluated by examining vertical cross-sections and top-down cross-section of the filled TSVs using optical microscope and X-ray method. Pretreatment process and relationship with diffusion time will be also studied with respect to the TSV plating process. The effect of concentration of copper, acid and additives will be optimized to achieve the desired bottom up plating process. The ultimate goal is to achieve TSV plating with shorter plating time and better consistency. Electroplating experiment was conducted with an industrial electroplating tool. Successful plating results are demonstrated with optimized plating bath and plating mechanism. The void free and seam free copper deposition results are shown with minimized overburden. The time taken for the plating process is also greatly reduced with this near 100% bottom up plating formula. The benefits of this novel plating mechanism will be discussed in detail in this paper.

Integration of Chemically Amplified Photoresist and High-Speed Copper Plating Products for Advanced Packaging Applications

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-22
Author(s):  
Rosemary Bell ◽  
Joseph Lachowski ◽  
Mitsuru Haga ◽  
Inho Lee ◽  
Regina Cho ◽  
...  
Keyword(s):  
High Speed ◽  
Product Line ◽  
Superior Performance ◽  
Copper Plating ◽  
Plating Bath ◽  
Chemical Company ◽  
Chemically Amplified ◽  
Key Factor ◽  
Advanced Packaging ◽  
Electroplating Process

Advanced packaging technologies require materials which will allow for better resolution of patterns associated with the ever more challenging device architecture, along with materials that will allow for higher throughput. Device throughput can be increased with imaging materials that have higher sensitivity and metallization chemistries with faster electrodeposition rates. Chemically amplified photoresists offer the advantages of excellent sensitivity and resolution with good process margins, coupled with excellent stripping performance and plating bath compatibility for the film thicknesses that are required in packaging applications. Electrolytic copper plating products with fast deposition rates are a key factor in decreasing wafer plating time and increasing throughput. However, it is the integration of the photoimaging material and the subsequent plating chemistry that is essential in producing metallized structures for copper pillar and solder applications. Because the profile of the resist image is directly transferred during the electroplating process, it is critical to have a well formed image that is resistant to the plating chemistry. Plating bath contamination and resist strippability are other key factors in producing void-free, defect-free structures. Dow's newly introduced chemically amplified material is capable of film thicknesses from 30um to 80um by a single coating process with good uniformity. Imaging and process latitude are demonstrated at 40um and 65um thicknesses with emphasis on sidewall profiles and sensitivity. Further, the photoresist compatibility with INTERVIA™ Cu 8540 Electroplating Copper Chemistry is shown, along with NIKAL™ BP Ni plating chemistry and SOLDERON™ BP TS 6000 SnAg plating chemistry compatibility. The improvements in product line from Dow's INTERVIA™ Cu 8540 to INTERVIA™ 9000 Electroplating Copper Chemistry is also demonstrated in the paper, with thickness uniformity, high plating speed, and tunable morphology highlighted for various applications. The power of integration has enabled the development of this suite of products designed for compatibility and superior performance for advanced packaging technologies. ™ Trademark of The Dow Chemical Company

scholarly journals Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3006
Author(s):  
Qiang Wei ◽  
Xiaofan Zhang ◽  
Fang Lin ◽  
Ruozheng Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cross Sections ◽  
Microwave Plasma ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Epitaxial Lateral Overgrowth ◽  
Plasma Chemical Vapor Deposition ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond

Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

Three-Dimensional Measurement of Line Edge Roughness in Copper Wires Using Electron Tomography

2009 ◽  
Vol 15 (3) ◽  
pp. 244-250 ◽  
Author(s):  
Peter Ercius ◽  
Lynne M. Gignac ◽  
C.-K. Hu ◽  
David A. Muller
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Electron Tomography ◽  
Three Dimensional ◽  
Cross Sectional Area ◽  
Original Structure ◽  
Sectional Area ◽  
Line Edge Roughness ◽  
Cross Sectional ◽  
Edge Roughness

AbstractElectrical interconnects in integrated circuits have shrunk to sizes in the range of 20–100 nm. Accurate measurements of the dimensions of these nanowires are essential for identifying the dominant electron scattering mechanisms affecting wire resistivity as they continue to shrink. We report a systematic study of the effect of line edge roughness on the apparent cross-sectional area of 90 nm Cu wires with a TaN/Ta barrier measured by conventional two-dimensional projection imaging and three-dimensional electron tomography. Discrepancies in area measurements due to the overlap of defects along the wire's length lead to a 5% difference in the resistivities predicted by the two methods. Tomography of thick cross sections is shown to give a more accurate representation of the original structure and allows more efficient sampling of the wire's cross-sectional area. The effect of roughness on measurements from projection images is minimized for cross-section thicknesses less than 50 nm, or approximately half the spatial frequency of the roughness variations along the length of the investigated wires.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Automated Detection of Pin Defects on Counterfeit Microelectronics

2018 ◽  
Author(s):  
Pallabi Ghosh ◽  
Domenic Forte ◽  
Damon L. Woodard ◽  
Rajat Subhra Chakraborty
Keyword(s):  
Integrated Circuits ◽  
Depth Map ◽  
Optical Microscope ◽  
Automated Detection ◽  
Detection Methods ◽  
Global Supply Chains ◽  
Subject Matter Experts ◽  
Security Breaches ◽  
The Past ◽  
Skilled Subject

Abstract Counterfeit electronics constitute a fast-growing threat to global supply chains as well as national security. With rapid globalization, the supply chain is growing more and more complex with components coming from a diverse set of suppliers. Counterfeiters are taking advantage of this complexity and replacing original parts with fake ones. Moreover, counterfeit integrated circuits (ICs) may contain circuit modifications that cause security breaches. Out of all types of counterfeit ICs, recycled and remarked ICs are the most common. Over the past few years, a plethora of counterfeit IC detection methods have been created; however, most of these methods are manual and require highly-skilled subject matter experts (SME). In this paper, an automated bent and corroded pin detection methodology using image processing is proposed to identify recycled ICs. Here, depth map of images acquired using an optical microscope are used to detect bent pins, and segmented side view pin images are used to detect corroded pins.

A Technique for Reliably Preparing Full-Length Metallographic Cross-Sections of Integrated Circuit Bond Wires

2006 ◽  
Author(s):  
Carl Nail
Keyword(s):  
Integrated Circuits ◽  
High Precision ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Radiographic Analysis ◽  
Good Resolution ◽  
Metallographic Preparation ◽  
Bond Wires ◽  
Darkfield Imaging ◽  
Bond Wire

Abstract To overcome the obstacles in preparing high-precision cross-sections of 'blind' bond wires in integrated circuits, this article proposes a different technique that generates reliable, repeatable cross-sections of bond wires across most or all of their lengths, allowing unencumbered and relatively artifact-free analysis of a given bond wire. The basic method for cross-sectioning a 'blind' bond wire involves radiographic analysis of the sample and metallographic preparation of the sample to the plane of interest. This is followed by tracking the exact location of the plane on the original radiograph using a stereomicroscope and finally darkfield imaging in which the wire is clearly visible with good resolution.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

Geological Field Sketches and Illustrations

2019 ◽  
Author(s):  
Matthew J. Genge
Keyword(s):  
Cross Sections ◽  
Earth Science ◽  
Three Dimensional ◽  
Worked Examples ◽  
Scientific Publications ◽  
Thin Sections ◽  
Geological Features ◽  
Different Types ◽  
The Subject

Drawings, illustrations, and field sketches play an important role in Earth Science since they are used to record field observations, develop interpretations, and communicate results in reports and scientific publications. Drawing geology in the field furthermore facilitates observation and maximizes the value of fieldwork. Every geologist, whether a student, academic, professional, or amateur enthusiast, will benefit from the ability to draw geological features accurately. This book describes how and what to draw in geology. Essential drawing techniques, together with practical advice in creating high quality diagrams, are described the opening chapters. How to draw different types of geology, including faults, folds, metamorphic rocks, sedimentary rocks, igneous rocks, and fossils, are the subjects of separate chapters, and include descriptions of what are the important features to draw and describe. Different types of sketch, such as drawings of three-dimensional outcrops, landscapes, thin-sections, and hand-specimens of rocks, crystals, and minerals, are discussed. The methods used to create technical diagrams such as geological maps and cross-sections are also covered. Finally, modern techniques in the acquisition and recording of field data, including photogrammetry and aerial surveys, and digital methods of illustration, are the subject of the final chapter of the book. Throughout, worked examples of field sketches and illustrations are provided as well as descriptions of the common mistakes to be avoided.

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