A Switch Module Stacked With 4/3 IGBTs With Balanced Voltage Sharing for PEF Applications

2020 ◽  
Author(s):  
Ba-Sy Nguyen ◽  
Paul C.-P. Chao
Keyword(s):  
Liquid Food ◽  
Food Treatment ◽  
Insulated Gate Bipolar Transistor ◽  
Power Switch ◽  
Igbt Module ◽  
Gate Driver ◽  
Drive Systems ◽  
Safe Operating ◽  
Thermal Pasteurization ◽  
Switch Module

Abstract Pulsed electric field (PEF) technology is a promising non-thermal pasteurization method that can be utilized to inactivate microorganisms in liquid food with high-voltage PEF. The power switch which is an important component of the PEF systems. This paper presents a design and implementation of an insulated gate bipolar transistor (IGBT) module which includes connections of three series and four parallel IGBTs and its special gate driver for small liquid food treatment systems at home. In this approach, two important issues must be considered. The first is to provide a safe operating condition for each single IGBTs in transient intervals. The second is to design gate drive systems with the capability of driving a large number of discrete devices simultaneously and ensure the current and voltage of single IGBTs in the module to be approximations. To evaluate the operation of the proposed structure, a module of three series and four parallel switches with the voltage capability of 1.8 kV and 60A is tested experimentally.

Intelligent bidirectional power switch module for matrix converter applications

2007 ◽  
Author(s):  
J. L. Galvez ◽  
X. Jorda ◽  
M. Vellvehi ◽  
J. Millan ◽  
M. A. Jose-Prieto ◽  
...  
Keyword(s):  
Matrix Converter ◽  
Power Switch ◽  
Switch Module

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

scholarly journals A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 851 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Hurley
Keyword(s):  
Working Conditions ◽  
Conduction Mechanism ◽  
Electrical Parameter ◽  
Physical Structure ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Detailed Method ◽  
Simulation Results

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

scholarly journals The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Shengqi Zhou ◽  
Luowei Zhou ◽  
Suncheng Liu ◽  
Pengju Sun ◽  
Quanming Luo ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Diagnostic Method ◽  
Approximate Entropy ◽  
Key Factors ◽  
Silicon Chips ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Before And After ◽  
Parasitic Parameters

Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

scholarly journals A Simplified Spice Model for IGBT

1998 ◽  
Vol 21 (4) ◽  
pp. 279-292 ◽  
Author(s):  
A. Haddi ◽  
A. Maouad ◽  
O. Elmazria ◽  
A. Hoffmann ◽  
J. P. Charles
Keyword(s):  
Equivalent Circuit ◽  
Bipolar Transistor ◽  
Experimental Results ◽  
Insulated Gate Bipolar Transistor ◽  
Spice Model ◽  
Safe Operating ◽  
Good Agreement ◽  
Latch Up

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

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