scholarly journals The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Shengqi Zhou ◽  
Luowei Zhou ◽  
Suncheng Liu ◽  
Pengju Sun ◽  
Quanming Luo ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Diagnostic Method ◽  
Approximate Entropy ◽  
Key Factors ◽  
Silicon Chips ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Before And After ◽  
Parasitic Parameters

Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

scholarly journals A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 851 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Hurley
Keyword(s):  
Working Conditions ◽  
Conduction Mechanism ◽  
Electrical Parameter ◽  
Physical Structure ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Detailed Method ◽  
Simulation Results

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals Development of energy-efficient IBC with IGBT module for photovoltaic applications

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kumar C Prasanna ◽  
Anand Rao
Keyword(s):  
Experimental Analysis ◽  
Energy Efficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Photovoltaic Applications ◽  
Interleaved Boost Converter ◽  
Power Diode

AbstractThe proposed study is improvised value-engineered modifications for the basic interleaved boost converter (IBC) by including relevant modifications in circuits, which is expected for a better performance in switching with reduction in losses. The newly modified IBC circuit with insulated gate bipolar transistor (IGBT) along with converter has been experimented by simulations and the results are tabulated to modified IBC with metal oxide silicon field effect transistors. Further experimental analysis and validations of the proposed simulation with hardware developed adopting model SKM195GB066D consisting of IGBTs is presented. This study further enhances and summarises the optimum utilisation and the performance of IBC with the proposed IGBT modules that synchronises power diode. Enhancing the simulation outcomes, the hardware is proposed and developed to be tested for a load up to 1.5 kW with the evaluation of key parameters such as efficiency of the converter.

scholarly journals A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 194
Author(s):  
Dan Luo ◽  
Minyou Chen ◽  
Wei Lai ◽  
Hongjian Xia ◽  
Xueni Ding ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Power Dissipation ◽  
Resistance Measurement ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Solder Fatigue ◽  
Lift Off ◽  
Resistance Decrease

Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

scholarly journals Is Organizing Knowledge Effective in Primary Education?

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Marisol Cueli ◽  
Ana Isabel Álvarez ◽  
Stephen Loew ◽  
Paloma González-Castro ◽  
Celestino Rodríguez
Keyword(s):  
Primary Education ◽  
Teaching And Learning ◽  
Reading Skills ◽  
Lexical Processing ◽  
Control Group ◽  
Traditional Teaching ◽  
Key Factors ◽  
Early School ◽  
Before And After ◽  
Key Aspects

The acquisition of reading comprehension abilities and written expression is one of the key factors among learning processes in which students show many difficulties. For this reason, it is necessary to implement effective intervention strategies from early school years. The program EPI.com is aimed at improving lexical, semantic, and syntactic processes related to the reading process. This work aims to analyze the efficiency of EPI.com in years 1&2 of Primary Education. Participants in the research were 62 students (ages 6–8), who were assigned to an Experimental Group (EG; 38 students receiving the EPI.com intervention) and a Control Group (CG; 24 following traditional teaching and learning methods). The Illinois Test of Psycholinguistic Abilities and the Peabody test were applied before and after the intervention was carried out. Results showed that the strategy was effective in EG in improving the psycholinguistic aspects measured by the ITPA, with better results in the variables related to syntactic and lexical processing. Taking the results into account, it was concluded that EPI.com allows students to improve the abilities relating to reading skills. Also, the results highlight the need to incorporate interventions aimed at favoring maturation in some key aspects at early ages.

scholarly journals Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network

2020 ◽  
Vol 10 (6) ◽  
pp. 2146 ◽  
Author(s):  
Jingxuan Zhang ◽  
Hexu Sun ◽  
Zexian Sun ◽  
Yan Dong ◽  
Weichao Dong
Keyword(s):  
Fault Diagnosis ◽  
Wind Turbine ◽  
Power Converter ◽  
Open Circuit ◽  
Original Signal ◽  
Variational Mode Decomposition ◽  
Mode Decomposition ◽  
Igbt Modules ◽  
Igbt Module ◽  
Circuit Fault Diagnosis

The power converter is a significant device in a wind power system. The wind turbine will be shut down and off grid immediately with the occurrence of the insulated gate bipolar transistor (IGBT) module open-circuit fault of the power converter, which will seriously impact the stability of grid and even threaten personal safety. However, in the existing diagnosis strategies for the power converter there are few single and double IGBT module open-circuit fault diagnosis methods producing negative results, including erroneous judgment, omissive judgment and low accuracy. In this paper, a novel method to diagnose the single and double IGBT modules open-circuit faults of the permanent magnet synchronous generator (PMSG) wind turbine grid-side converter (GSC) is proposed: Primarily, by collecting the three-phase current varying with a wind speed of 22 states, including a normal state and 21 failure states of PMSG wind turbine GSC as the original signal data. Afterward, the original signal data are decomposed by using variational mode decomposition (VMD) to obtain the mode coefficient series, which are analyzed by the proposed method base on fault trend feature for extracting the trend feature vectors. Finally, the trend feature vectors are utilized as the input of the deep belief network (DBN) for decision-making and obtaining the classification results. The simulation and experimental results show that the proposed method can diagnose the single and double IGBT modules open-circuit faults of GSC, and the accuracy is higher than the benchmark models.

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

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