MOSFET MODELING AND PARAMETER EXTRACTION FOR RF IC'S

2001 ◽  
Vol 11 (04) ◽  
pp. 953-1006 ◽  
Author(s):  
MINKYU JE ◽  
ICKJIN KWON ◽  
HYUNGCHEOL SHIN ◽  
KWYRO LEE
Keyword(s):  
High Frequency ◽  
Circuit Simulation ◽  
Low Frequency ◽  
Parameter Extraction ◽  
Extraction Methods ◽  
Model Parameters ◽  
Large Signal ◽  
Charge Conservation ◽  
Macro Modeling ◽  
High Frequency Effects

After reviewing the basic concept and general strategies, we have examined a variety of examples of modeling and parameter extraction methods for RF MOSFET's. Modeling and parameter extraction techniques popular in III-V FET modeling were reviewed and recent efforts to model the RF MOSFET and extract the model parameters were examined in light of the differences between the MOSFET and the III-V FET. A very simple and accurate parameter extraction method studied in our laboratory for three-terminal modeling considering charge conservation is also introduced. Our works have two important implications. One is that the consideration for charge conservation is important not only for accurate device modeling and circuit simulation but even more for proper parameter extraction. Another is that one accurate large-signal I-V model is enough to be used for DC, low-frequency analog, as well as RF circuit simulation. Four-terminal modeling based on new equivalent circuits to address the high-frequency effects arising in a MOSFET is very complicated and not practical for CAD applications, even without considering the substrate coupling terms. As a temporary alternative, the macro-modeling approach is examined with various examples.

scholarly journals Behavioral Model of Silicon Photo-Multipliers Suitable for Transistor-Level Circuit Simulation

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1551
Author(s):  
Gianluca Giustolisi ◽  
Paolo Finocchiaro ◽  
Alfio Pappalardo ◽  
Gaetano Palumbo
Keyword(s):  
Single Photon ◽  
Circuit Simulation ◽  
Extraction Procedure ◽  
Behavioral Model ◽  
Parameter Extraction ◽  
Model Parameters ◽  
Single Photons ◽  
Single Photon Detection ◽  
Silicon Photomultiplier ◽  
Photon Detection

Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and permit the measurement of weak optical signals. Single-photon detection is accomplished through high-performance read-out front-end electronics whose design needs accurate modeling of the photomultiplier device. In the past, a useful model was developed, but it is limited to the device electrical characteristic and its parameter extraction procedure requires several measurement steps. A new silicon photomultiplier model is proposed in this paper. It exploits the Verilog-a behavioral language and is appropriate to transistor-level circuit simulations. The photon detection of a single cell is modeled using the traditional electrical model. A statistical model is included to describe the silicon photomultiplier noise caused by dark-count or after-pulsing effects. The paper also includes a procedure for the extraction of the model parameters through measurements. The Verilog-a model and the extraction procedure are validated by comparing simulations to experimental results.

UPCONVERSION OF INTERGROUP HOT-CARRIER NOISE IN SEMICONDUCTORS OPERATING UNDER PERIODIC LARGE-SIGNAL CONDITIONS

2003 ◽  
Vol 03 (01) ◽  
pp. L51-L61 ◽  
Author(s):  
PAVEL SHIKTOROV ◽  
EVGENIJ STARIKOV ◽  
VIKTORAS GRUŽINSKIS ◽  
SUSANA PEREZ ◽  
TOMAS GONZALEZ ◽  
...  
Keyword(s):  
Momentum Space ◽  
High Frequency ◽  
Carrier Transport ◽  
Low Frequency ◽  
Large Signal ◽  
High Frequency Region ◽  
Velocity Fluctuations ◽  
Hot Carrier ◽  
Bulk Semiconductors ◽  
Long Time

By means of Monte Carlo simulations of carrier transport in bulk semiconductors operating under periodic large-signal regime, we show the existence of upconversion of low-frequency hot-carrier noise associated with velocity fluctuations into a high-frequency region centered around the fundamental frequency of the large-signal. It is found that the upconverted noise corresponds to long-time fluctuations of relative populations of two groups of carriers characterized by different dynamical properties in momentum space. The appearance of the upconversion process is related to kinks of the static velocity-field characteristic when the dynamics of carrier motion in momentum space undergoes drastic changes.

scholarly journals Non-Iterative Methods for the Extraction of the Single-Diode Model Parameters of Photovoltaic Modules: A Review and Comparative Assessment

Energies ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 358 ◽  
Author(s):  
Efstratios Batzelis
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Extraction Methods ◽  
Comparative Assessment ◽  
Research Topic ◽  
Model Parameters ◽  
Assessment Criterion ◽  
Straightforward Calculation ◽  
Photovoltaic Modules ◽  
First Time

The extraction of the photovoltaic (PV) model parameters remains to this day a long-standing and popular research topic. Numerous methods are available in the literature, widely differing in accuracy, complexity, applicability, and their very nature. This paper focuses on the class of non-iterative parameter extraction methods and is limited to the single-diode PV model. These approaches consist of a few straightforward calculation steps that do not involve iterations; they are generally simple and easy to implement but exhibit moderate accuracy. Seventeen such methods are reviewed, implemented, and evaluated on a dataset of more than one million measured I-V curves of six different PV technologies provided by the National Renewable Energy Laboratories (NREL). A comprehensive comparative assessment takes place to evaluate these alternatives in terms of accuracy, robustness, calculation cost, and applicability to different PV technologies. For the first time, the irregularities found in the extracted parameters (negative or complex values) and the execution failures of these methods are recorded and are used as an assessment criterion. This comprehensive and up-to-date literature review will serve as a useful tool for researchers and engineers in selecting the appropriate parameter extraction method for their application.

scholarly journals Reliability and correlation of fMRI, ECoG and EEG during natural stimulus processing

2017 ◽  
Author(s):  
Stefan Haufe ◽  
Paul DeGuzman ◽  
Simon Henin ◽  
Michael Arcaro ◽  
Christopher J. Honey ◽  
...  
Keyword(s):  
High Frequency ◽  
Signal To Noise Ratio ◽  
Low Frequency ◽  
Brain Regions ◽  
Large Signal ◽  
Natural Stimulus ◽  
Stimulus Processing ◽  
Imaging Methods ◽  
Wide Range ◽  
Task Irrelevant

Human brain mapping relies heavily on fMRI, ECoG and EEG, which capture different physiological signals. Relationships between these signals have been established in the context of specific tasks or during resting state, often using spatially confined concurrent recordings in animals. But it is not certain whether these correlations generalize to other contexts relevant for human cognitive neuroscience. Here, we address the case of complex naturalistic stimuli and ask two basic questions. First, how reliable are the responses evoked by a naturalistic audio-visual stimulus in each of these imaging methods, and second, how similar are stimulus-related responses across methods? To this end, we investigated a wide range of brain regions and frequency bands. We presented the same movie clip twice to three different cohorts of subjects (NEEG = 45, NfMRI = 11, NECoG = 5) and assessed stimulus-driven correlations across viewings and between imaging methods, thereby ruling out task-irrelevant confounds. All three imaging methods had similar repeat-reliability across viewings when fMRI and EEG data were averaged across subjects, highlighting the potential to achieve large signal-to-noise ratio by leveraging large sample sizes. The fMRI signal correlated positively with high-frequency ECoG power across multiple task-related cortical structures but positively with low-frequency EEG and ECoG power. In contrast to previous studies, these correlations were as strong for low-frequency as for high frequency ECoG. We also observed links between fMRI and infra-slow EEG voltage fluctuations. These results extend previous findings to the case of natural stimulus processing.

EFFECT OF PROCESS VARIATIONS ON AN OTFT COMPACT MODEL PARAMETERS

2011 ◽  
Vol 20 (04) ◽  
pp. 815-828 ◽  
Author(s):  
R. PICOS ◽  
E. GARCIA ◽  
M. ESTRADA ◽  
A. CERDEIRA ◽  
B. IÑIGUEZ
Keyword(s):  
Circuit Simulation ◽  
Monte Carlo Model ◽  
Process Variations ◽  
Deposition Process ◽  
Parameter Extraction ◽  
Semiconductor Layer ◽  
Physical Parameters ◽  
Model Parameters ◽  
Layer Deposition ◽  
Silvaco Atlas

We have studied the effect of some of the possible deviations on the values of the extracted parameters of a specific OTFT model, considering OTFTs designed using P 3 HT as semiconductor layer, PMMA as insulator, bottom gate, and top gold contacts. Specifically, we have studied the influence of misposition or misalignment of the masks, the effect of imperfections of etching, and the effect of variations on the layer deposition process. These effects have been simulated using the Silvaco Athena software, and they have been modeled as horizontal shifts of the etching windows and variations of the layers thickness. Once the devices were defined, they were simulated using Silvaco Atlas, and parameter extraction was performed using a specifically developed algorithm. We have found a strong correlation among some of the physical parameters and the model parameters that may offer useful insight for process optimization. Moreover, strong correlations have been found also among the model parameters. We have used these results to develop a Monte Carlo model, suitable for statistical circuit simulation.

scholarly journals Modeling and Simulation of Monolithic Single-Supply Power Operational Amplifiers

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4611
Author(s):  
Ivailo Milanov Pandiev
Keyword(s):  
Supply Voltage ◽  
Circuit Simulation ◽  
Operational Amplifiers ◽  
Model Parameters ◽  
Electrical Parameters ◽  
Macro Model ◽  
Offset Voltage ◽  
Macro Modeling ◽  
Versus Supply Voltage ◽  
Versus Supply

In this paper a simple PSpice (Personal Simulation Program with Integrated Circuit Emphasis) macro-model was developed, and verified for monolithic power operational amplifiers operated with a single-supply voltage. The proposed macro-model is developed using simplification and build-up techniques for macro-modeling of operational amplifiers and simulates the basic static and dynamic characteristics, including input impedance, small-signal frequency responses at various voltage gains, output power versus supply voltage, slew-rate-limiting, voltage limiting, output offset voltage versus supply voltage ripples, and output resistance. Furthermore, the macro-model also takes into account the ground reference voltage in the amplifier at a single power supply voltage. The model is implemented as a hierarchical structure suitable for the PSpice circuit simulation platform. The sub-circuit is built using standard PSpice components and analog behavioral modeling blocks. The accuracy of the model is verified by extracting the model parameters for single-supply power operational amplifier TDA2005 from ST Microelectronics as example. The effectiveness of the model is validated by comparing the simulation results of the electrical parameters with the corresponding measured values obtained by experimental testing of sample circuits. The comparative analysis shows that the relative error of the modeled large-signal parameters is less than 15%. Moreover, an error of 15% is quite acceptable, considering the technological tolerances of the electrical parameters for this type of analog ICs.

SPICE BSIM3 Model Parameter Extraction and Optimisation: Practical Considerations

2007 ◽  
Vol 44 (3) ◽  
pp. 249-262
Author(s):  
H. Abebe ◽  
V. Tyree ◽  
H. Morris ◽  
P. T. Vernier
Keyword(s):  
Good Accuracy ◽  
Circuit Simulation ◽  
Parameter Extraction ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Measured Data ◽  
Ring Oscillator ◽  
Model Parameters ◽  
Ic Design ◽  
Model Parameter

This tutorial paper discusses the SPICE BSIM3v3.1 model parameter extraction and optimisation strategies that show consistency and very good accuracy in circuit simulation, less than 10% error, for practical IC design application in deep submicron processes. This paper describes an approach to BSIM3v3.1 model parameter extraction that mitigates or eliminates many of the unstable circuit behaviours observed during SPICE simulations with BSIM3v3. We present here a strategy applicable to 0.18 micron CMOS technology, in which the accuracy of the final extracted model parameters is evaluated by comparing simulations of inverter gain and a 31-stage ring oscillator with measured data.

Simulations of high-resolution images of amorphous silicon films

1986 ◽  
Vol 44 ◽  
pp. 544-545
Author(s):  
G. Y. Fan ◽  
J. M. Cowley
Keyword(s):  
Electron Microscope ◽  
High Frequency ◽  
Fourier Transformation ◽  
Amorphous Materials ◽  
Low Frequency ◽  
Chromatic Aberration ◽  
Structure Information ◽  
Frequency Components ◽  
High Resolution Images ◽  
Spatial Frequency Spectrum

It is well known that the structure information on the specimen is not always faithfully transferred through the electron microscope. Firstly, the spatial frequency spectrum is modulated by the transfer function (TF) at the focal plane. Secondly, the spectrum suffers high frequency cut-off by the aperture (or effectively damping terms such as chromatic aberration). While these do not have essential effect on imaging crystal periodicity as long as the low order Bragg spots are inside the aperture, although the contrast may be reversed, they may change the appearance of images of amorphous materials completely. Because the spectrum of amorphous materials is continuous, modulation of it emphasizes some components while weakening others. Especially the cut-off of high frequency components, which contribute to amorphous image just as strongly as low frequency components can have a fundamental effect. This can be illustrated through computer simulation. Imaging of a whitenoise object with an electron microscope without TF limitation gives Fig. 1a, which is obtained by Fourier transformation of a constant amplitude combined with random phases generated by computer.

Sign in / Sign up

Export Citation Format

Share Document