EFFECT OF PROCESS VARIATIONS ON AN OTFT COMPACT MODEL PARAMETERS

2011 ◽  
Vol 20 (04) ◽  
pp. 815-828 ◽  
Author(s):  
R. PICOS ◽  
E. GARCIA ◽  
M. ESTRADA ◽  
A. CERDEIRA ◽  
B. IÑIGUEZ
Keyword(s):  
Circuit Simulation ◽  
Monte Carlo Model ◽  
Process Variations ◽  
Deposition Process ◽  
Parameter Extraction ◽  
Semiconductor Layer ◽  
Physical Parameters ◽  
Model Parameters ◽  
Layer Deposition ◽  
Silvaco Atlas

We have studied the effect of some of the possible deviations on the values of the extracted parameters of a specific OTFT model, considering OTFTs designed using P 3 HT as semiconductor layer, PMMA as insulator, bottom gate, and top gold contacts. Specifically, we have studied the influence of misposition or misalignment of the masks, the effect of imperfections of etching, and the effect of variations on the layer deposition process. These effects have been simulated using the Silvaco Athena software, and they have been modeled as horizontal shifts of the etching windows and variations of the layers thickness. Once the devices were defined, they were simulated using Silvaco Atlas, and parameter extraction was performed using a specifically developed algorithm. We have found a strong correlation among some of the physical parameters and the model parameters that may offer useful insight for process optimization. Moreover, strong correlations have been found also among the model parameters. We have used these results to develop a Monte Carlo model, suitable for statistical circuit simulation.

scholarly journals Behavioral Model of Silicon Photo-Multipliers Suitable for Transistor-Level Circuit Simulation

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1551
Author(s):  
Gianluca Giustolisi ◽  
Paolo Finocchiaro ◽  
Alfio Pappalardo ◽  
Gaetano Palumbo
Keyword(s):  
Single Photon ◽  
Circuit Simulation ◽  
Extraction Procedure ◽  
Behavioral Model ◽  
Parameter Extraction ◽  
Model Parameters ◽  
Single Photons ◽  
Single Photon Detection ◽  
Silicon Photomultiplier ◽  
Photon Detection

Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and permit the measurement of weak optical signals. Single-photon detection is accomplished through high-performance read-out front-end electronics whose design needs accurate modeling of the photomultiplier device. In the past, a useful model was developed, but it is limited to the device electrical characteristic and its parameter extraction procedure requires several measurement steps. A new silicon photomultiplier model is proposed in this paper. It exploits the Verilog-a behavioral language and is appropriate to transistor-level circuit simulations. The photon detection of a single cell is modeled using the traditional electrical model. A statistical model is included to describe the silicon photomultiplier noise caused by dark-count or after-pulsing effects. The paper also includes a procedure for the extraction of the model parameters through measurements. The Verilog-a model and the extraction procedure are validated by comparing simulations to experimental results.

MOSFET MODELING AND PARAMETER EXTRACTION FOR RF IC'S

2001 ◽  
Vol 11 (04) ◽  
pp. 953-1006 ◽  
Author(s):  
MINKYU JE ◽  
ICKJIN KWON ◽  
HYUNGCHEOL SHIN ◽  
KWYRO LEE
Keyword(s):  
High Frequency ◽  
Circuit Simulation ◽  
Low Frequency ◽  
Parameter Extraction ◽  
Extraction Methods ◽  
Model Parameters ◽  
Large Signal ◽  
Charge Conservation ◽  
Macro Modeling ◽  
High Frequency Effects

After reviewing the basic concept and general strategies, we have examined a variety of examples of modeling and parameter extraction methods for RF MOSFET's. Modeling and parameter extraction techniques popular in III-V FET modeling were reviewed and recent efforts to model the RF MOSFET and extract the model parameters were examined in light of the differences between the MOSFET and the III-V FET. A very simple and accurate parameter extraction method studied in our laboratory for three-terminal modeling considering charge conservation is also introduced. Our works have two important implications. One is that the consideration for charge conservation is important not only for accurate device modeling and circuit simulation but even more for proper parameter extraction. Another is that one accurate large-signal I-V model is enough to be used for DC, low-frequency analog, as well as RF circuit simulation. Four-terminal modeling based on new equivalent circuits to address the high-frequency effects arising in a MOSFET is very complicated and not practical for CAD applications, even without considering the substrate coupling terms. As a temporary alternative, the macro-modeling approach is examined with various examples.

SPICE BSIM3 Model Parameter Extraction and Optimisation: Practical Considerations

2007 ◽  
Vol 44 (3) ◽  
pp. 249-262
Author(s):  
H. Abebe ◽  
V. Tyree ◽  
H. Morris ◽  
P. T. Vernier
Keyword(s):  
Good Accuracy ◽  
Circuit Simulation ◽  
Parameter Extraction ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Measured Data ◽  
Ring Oscillator ◽  
Model Parameters ◽  
Ic Design ◽  
Model Parameter

This tutorial paper discusses the SPICE BSIM3v3.1 model parameter extraction and optimisation strategies that show consistency and very good accuracy in circuit simulation, less than 10% error, for practical IC design application in deep submicron processes. This paper describes an approach to BSIM3v3.1 model parameter extraction that mitigates or eliminates many of the unstable circuit behaviours observed during SPICE simulations with BSIM3v3. We present here a strategy applicable to 0.18 micron CMOS technology, in which the accuracy of the final extracted model parameters is evaluated by comparing simulations of inverter gain and a 31-stage ring oscillator with measured data.

Above-Threshold Parameter Extraction Including Contact Resistance Effects for a-Si:H TFTs on Glass and Plastic

2003 ◽  
Vol 762 ◽  
Author(s):  
Peyman Servati ◽  
Denis Striakhilev ◽  
Arokia Nathan
Keyword(s):  
Contact Resistance ◽  
Material Properties ◽  
Measurement Data ◽  
Process Variations ◽  
Accurate Method ◽  
Parameter Extraction ◽  
Channel Length ◽  
Process Conditions ◽  
Physical Parameters ◽  
Plastic Substrates

AbstractThis paper presents a fast and accurate method for extraction of the above-threshold physical parameters (such as threshold voltage, power parameter, effective mobility, and contact resistance) from measurement data in the linear and saturation regions of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) fabricated on glass and plastic substrates. The method of extraction is different from techniques that are currently used by virtue of the departure from the square law dependence of the current-voltage characteristics. In addition, a broader range of process-induced variation in material properties is expected, which is accentuated by the effects of different substrates, leading to wide-ranging device parameters. In particular, non-ideal parameters such as contact resistance may vary by orders of magnitude due to process variations, thus strongly influencing the extracted values of TFT parameters if its effect is not considered in the extraction method. In this paper, the effect of contact resistance and other non-ideal parameters is systematically identified and eliminated using TFTs with different channel length. The extracted values for TFTs on glass and plastic substrates clearly highlights the differences in material properties stemming from the different process conditions and substrate properties, and provide insight that is invaluable for subsequent device/process optimization.

Mechanically Stable Antireflection and Antifogging Coatings Fabricated by the Layer-by-Layer Deposition Process and Postcalcination

Langmuir ◽  
2008 ◽  
Vol 24 (19) ◽  
pp. 10851-10857 ◽  
Author(s):  
Lianbin Zhang ◽  
Yang Li ◽  
Junqi Sun ◽  
Jiacong Shen
Keyword(s):  
Deposition Process ◽  
Layer By Layer ◽  
Layer Deposition

scholarly journals A New Parameter-Extraction Method for DGS and its Application to the Low-Pass Filter

2004 ◽  
Vol 27 (2) ◽  
pp. 119-123 ◽  
Author(s):  
Haiwen Liu ◽  
Xiaowei Sun ◽  
Zhengfan Li
Keyword(s):  
Equivalent Circuit ◽  
Extraction Method ◽  
Circuit Simulation ◽  
Equivalent Circuit Model ◽  
Design Procedure ◽  
Parameter Extraction ◽  
Defected Ground Structure ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass

A new and simple parameter-extraction method for the equivalent circuit of defected ground structure (DGS) is presented. Using this method, circuit simulation, based on the DGS equivalent-circuit model, show excellent agreements with the electromagnetic (EM) simulation. Further, our method is applied effectively to design a low-pass filter (LPF) with DGS. Comparison between simulation and measurement confirm the validity of the LPF configuration and design procedure. Simple structure and high power handling capability are obtained from the proposed LPF.

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