HIGH GROWTH-RATE DEPOSITION OF μc-Si:H THIN FILM AT LOW TEMPERATURE WITH VHF-PECVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4259-4262 ◽  
Author(s):  
HUIDONG YANG ◽  
CHUNYA WU ◽  
YAOHUA MAI ◽  
HONGBO LI ◽  
YAN LI ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Growth Rates ◽  
Optical Emission Spectroscopy ◽  
Excitation Frequency ◽  
High Growth ◽  
Optical Emission ◽  
High Growth Rate ◽  
Working Pressure ◽  
The Relationship

High growth rate deposition of μ c - Si:H film with VHF-PECVD at low temperature has been reported. Investigations showed that growth rates enhanced with higher excitation frequency and working pressure, but increased at first then decreased with the increase of plasma power. Optical emission spectroscopy (OES) was introduced to monitor VHF plasma. The relationship between the growth rates and the OES results has been discussed. Raman spectra were also used to study the a - Si:H /μ c - Si:H phase transition. Finally a high growth rate of 2.0nm/s has been obtained through the initially optimized condition.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Abnormalities in the differentiation and cellular properties of hyperplastic lens epithelium from strains of chickens selected for high growth rate

Development ◽  
1976 ◽  
Vol 35 (1) ◽  
pp. 1-23
Author(s):  
R. M. Clayton ◽  
G. Eguch ◽  
D. E. S. Truman ◽  
M. M. Perry ◽  
J. Jacob ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epithelial Cells ◽  
Cell Surface ◽  
Protein Metabolism ◽  
High Growth ◽  
Mitotic Rate ◽  
High Growth Rate ◽  
Cell Surface Properties ◽  
Rate Capacity ◽  
The Relationship

Similar morphological abnormalities of the lens of the eye of two unrelated strains of chicks, both of which had been selected for high growth rate, were found to be associated with epithelial cells showing marked deviations from the normal in cell surface properties, mitotic rate, capacity for differentiation, and in DNA, RNA and protein metabolism. The relationship between these modified properties and the observed morphology is discussed.

scholarly journals Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 32 ◽  
Author(s):  
Hao Liu ◽  
Jia-jun Li ◽  
Zhen-rui Li ◽  
Kai Xu ◽  
Zheng-jia Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Radio Frequency ◽  
Single Crystal ◽  
Emission Spectra ◽  
High Growth ◽  
Optical Emission ◽  
Plasma Jet ◽  
Methane Flux ◽  
High Growth Rate ◽  
Single Crystal Diamond

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

The effect of growth rate on muscle distribution in sheep

1975 ◽  
Vol 85 (1) ◽  
pp. 189-191 ◽  
Author(s):  
D. M. Murray ◽  
Olga Slezacek
Keyword(s):  
Growth Rate ◽  
Weight Loss ◽  
Growth Rates ◽  
Live Weight ◽  
High Growth ◽  
Growth Path ◽  
Merino Sheep ◽  
Reported Data ◽  
Relationship Of ◽  
The Relationship

There is little information available on the effect of growth rate on muscle distribution in sheep. Although Lohse, Moss & Butterfield (1971) and Lohse (1973) have reported data on muscle distribution of Merino sheep, the growth rates of animals in both these studies were neither controlled nor reported. In another experiment using Merino sheep, Lohse, Pryor & Butterfield (1973) studied the effect of a period of live-weight loss on the relationship of selected muscles to total side muscle during subsequent re-alimentation. They found that the interrupted growth path decreased the proportion of total side muscle formed by the weight of ten muscles which had previously been classified as muscles with a high growth impetus (Lohse, 1971). Data are presented herein for the muscle distribution of sheep grown along three growth paths.

Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace

2006 ◽  
Vol 527-529 ◽  
pp. 267-270 ◽  
Author(s):  
Chi Kwon Park ◽  
Joon Ho An ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Shigehiro Nishino
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
High Growth ◽  
High Growth Rate ◽  
Working Pressure ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
Etched Surface ◽  
Sublimation Growth

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate (30 μm/h) exhibited a low etch pit density (EPD) of ~2000 /cm2 and a low micropipe density (MPD) of 2 /cm2. The etched surface of a SiC epitaxial layer grown with a high growth rate (above 100 μm/h) contained a high EPD of ~3500 /cm2 and a high MPD of ~500 /cm2, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

2019 ◽  
Vol 485 ◽  
pp. 381-390 ◽  
Author(s):  
Taewook Nam ◽  
Hyunho Lee ◽  
Taejin Choi ◽  
Seunggi Seo ◽  
Chang Mo Yoon ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
High Growth ◽  
High Growth Rate

The Role of Chlorine during High Growth Rate Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 141-144 ◽  
Author(s):  
Robin Karhu ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Ivan Ivanov ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Charge Carrier ◽  
Growth Rates ◽  
Growth Process ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Growth ◽  
High Growth Rate ◽  
Charge Carrier Lifetime

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

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