A SELF-RECTIFYING BIPOLAR RRAM DEVICE BASED ON Ni/HfO2/n+-Si STRUCTURE

2014 ◽  
Vol 28 (04) ◽  
pp. 1450030
Author(s):  
YINGTAO LI ◽  
XINYU JIANG ◽  
CHUNLAN TAO
Keyword(s):  
Resistive Switching ◽  
High Density ◽  
Point Of View ◽  
The Self ◽  
Experimental Results ◽  
Schottky Junction ◽  
Conductive Filament ◽  
Switching Mechanism ◽  
Switching Characteristics

A bipolar RRAM device based on Ni / HfO 2/n+- Si structure with self-rectifying characteristics is demonstrated for high density cross-bar memory application. Experimental results indicate that Ni conductive filament generated at LRS plays an important role in resistive switching, resulting in the formation of a Schottky junction at the Ni -CF/n+- Si interface which determines the self-rectifying behavior at LRS. These results are very important from the point of view of understanding the self-rectifying switching mechanism and improving the resistive switching characteristics of self-rectifying RRAM devices.

scholarly journals Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Tingting Zhong ◽  
Yongfu Qin ◽  
Fengzhen Lv ◽  
Haijun Qin ◽  
Xuedong Tian
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Resistance Switching ◽  
High Density ◽  
Switching Behavior ◽  
Photoelectrical Properties ◽  
Ito Glass ◽  
One Step ◽  
Switching Characteristics

Abstract High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol–gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of 10 mW/cm2 (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs2AgBiBr6 layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs2AgBiBr6 affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs2AgBiBr6-based resistive switching memory devices is a promising strategy to develop high-density memory. Graphical Abstract

The Recent Advances of Research on Memristor and Memristive Characteristic Devices

2013 ◽  
Vol 685 ◽  
pp. 201-206 ◽  
Author(s):  
Mi Li ◽  
Hong Deng ◽  
Min Wei ◽  
Wen Wen Qiu ◽  
Jian Qiang Yao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Experimental Results ◽  
New Materials ◽  
Circuit Element ◽  
Bipolar Resistive Switching ◽  
Nonlinear Resistor ◽  
Similarities And Differences ◽  
Switching Characteristics ◽  
With Memory ◽  
Selection Of

As a circuit element, memristor behaves like a nonlinear resistor with memory. It is demonstrated as the fourth fundamental circuit element in addition to resistor, capacitor and inductor. This paper summarized the main progress in this field, such as, the development of models and mechanism, the selection of new materials, the experimental results, and the similarities and differences of unipolar and bipolar Resistive Switching Characteristics

A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13449-13456 ◽  
Author(s):  
Xiaohu Wang ◽  
Bin Gao ◽  
Huaqiang Wu ◽  
Xinyi Li ◽  
Deshun Hong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Laser Excitation ◽  
Conductive Filament ◽  
Switching Device ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Resistive switching device with a transparent top electrode and laser excitation of conductive filament consisting of oxygen vacancies have been reported.

scholarly journals Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoyu Zhou ◽  
Yuan Luo ◽  
Aidong Li ◽  
Di Wu
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Conductive Filament ◽  
Bipolar Resistive Switching ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Diode Behavior ◽  
And Migration ◽  
Switching Characteristics ◽  
Pzt Ferroelectric Thin Films

Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3substrates buffered with La0.7Sr0.3MnO3(LSMO) electrodes. AmorphousTiOxthin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary withTiOxdeposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in theTiOxlayer.

scholarly journals Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor

2018 ◽  
Vol 67 (15) ◽  
pp. 157302
Author(s):  
Yu Zhi-Qiang ◽  
Liu Min-Li ◽  
Lang Jian-Xun ◽  
Qian Kai ◽  
Zhang Chang-Hua
Keyword(s):  
Resistive Switching ◽  
Switching Mechanism ◽  
Switching Characteristics ◽  
Resistive Switching Mechanism

A resistive device with electrolyte as active electrode

2020 ◽  
Vol 34 (28) ◽  
pp. 2050267
Author(s):  
Tian Kang ◽  
Xiaoyu Chen ◽  
Jia Zhu ◽  
Yun Huang ◽  
Zhuojie Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Conductive Filament ◽  
Active Electrode ◽  
Ion Migration ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

Dielectric Morphology and RRAM Resistive Switching Characteristics

2014 ◽  
Vol 1691 ◽  
Author(s):  
G. Bersuker ◽  
B. Butcher ◽  
D. C. Gilmer ◽  
L. Larcher ◽  
A. Padovani ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Resistive Switching ◽  
Structural Characteristics ◽  
Oxygen Deficiency ◽  
Atomic Level ◽  
Forming Process ◽  
Conductive Filament ◽  
Oxygen Ions ◽  
Operational Characteristics ◽  
Switching Characteristics

ABSTRACTThe connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered. Specifically, the atomic-level description of RRAM, which operations involve the repeatable rupture/recreation of a localized conductive path, reveals that its performance is determined by the outcome of the initial forming process defining the structural characteristics of the conductive filament and distribution of the oxygen ions released from the filament region. The post-forming ions spatial distribution in the cell is found to be linked to a degree of dielectric oxygen deficiency, which may either assist or suppress the resistive switching processes.

scholarly journals Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17882-17888 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
The Self ◽  
Memory Devices ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiNx/p-Si devices.

scholarly journals Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2159 ◽  
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Short Term Memory ◽  
Atomic Layer ◽  
The Self ◽  
Short Term ◽  
Paired Pulse ◽  
Interval Time ◽  
Layer Deposition ◽  
Switching Characteristics ◽  
Reset Pulse

Here, we propose a Pt/HfO2/TaOx/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO2/TaOx/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resistive switching characteristics are achieved by the asymmetric device stack, which is an advantage of the current suppression in the crossbar array structure. The results show that the programmed data are lost over time and that the decay rate, which is verified from the retention test, can be adjusted by controlling the compliance current (CC). Based on these properties, we emulate bio-synaptic characteristics, such as short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF), in the self-rectifying I–V characteristics of the Pt/HfO2/TaOx/TiN bilayer memristor device. The PPF characteristics are mimicked by replacing the bio-stimulation with the interval time of paired pulse inputs. The typical potentiation and depression are also implemented by optimizing the set and reset pulse. Finally, we demonstrate the natural depression by varying the interval time between pulse inputs.

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