Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

2016 ◽  
Vol 15 (03) ◽  
pp. 1640004 ◽  
Author(s):  
M. S. Islam ◽  
M. F. Hossain ◽  
S. M. A. Razzak ◽  
M. M. Haque ◽  
D. K. Saha
Keyword(s):  
Thin Films ◽  
Absorption Edge ◽  
Thermal Evaporation ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Bare Glass Substrate ◽  
Water Cleaning ◽  
Bulk Absorption ◽  
Nanoporous Surface

The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05[Formula: see text]mbar, source–substrate distance of 3[Formula: see text]cm and source temperature 700[Formula: see text]C. Then, high-crystalline ZnO thin film is obtained by annealing at 500[Formula: see text]C for 2[Formula: see text]h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10[Formula: see text]min and 20[Formula: see text]min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20[Formula: see text]min has excitation absorption-edge at 369[Formula: see text]nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380[Formula: see text]nm. The gap energy of ZnO film is decreased from 3.14[Formula: see text]eV to 3.09[Formula: see text]eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

Structural and Optical Studies of Molarity Based ZnO Thin Films

2017 ◽  
Vol 17 ◽  
pp. 140-148 ◽  
Author(s):  
A. Jacquiline Regina Mary ◽  
S. Arumugam
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Visible Region ◽  
Precursor Solution ◽  
Hexagonal Wurtzite Structure ◽  
Solution Concentration ◽  
Molar Concentration ◽  
Zno Thin Films ◽  
Zno Films ◽  
Average Grain Size

Zinc Oxide thin films were prepared for different precursor solution molarities from 0.025M to 0.1M by spray pyrolysis deposition technique. A comprehensive study was carried out to realize the effect of concentration of precursor on ZnO thin films. The optimized temperature of the glass substrate was 300°C. From the XRD data it is inferred that the films are polycrystalline and hexagonal wurtzite structure . The degree of preferred orientation were along diffraction planes (100), (002) and (101) for all the ZnO films. The intensity of the diffraction peak prepared with 0.1M concentration is higher than those prepared at lower concentrations. The grain size (D) was calculated using Debye-Scherrer formula. It was found that the average grain size increases, when the molar concentration increases. As the solution concentration increases, the band gap decreases. The films are transparent in the visible region (85%), and the transmittance decreases as the molar concentration increases, which is caused by optical scattering at grain boundaries.

The Structural Characterization and Optical Properties of Zinc Oxide Films Synthesized by Electrochemistry Method

2013 ◽  
Vol 743-744 ◽  
pp. 926-931
Author(s):  
Jing Xia Zheng ◽  
Xing Guo Zhao ◽  
Wei Liang ◽  
Jin Bo Xue
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrolyte Concentration ◽  
Hexagonal Wurtzite Structure ◽  
Zinc Nitrate ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
The Matrix

Flaky ZnO thin films were electrodeposited from an aqueous solution of zinc nitrate (Zn (NO3)2) as electrolyte on ITO glass substrate by cathodic reduction method The effect of electrolyte concentration on the structure, morphology and optical properties of ZnO thin films were studied by X-ray diffraction, scanning electron microscopy and UV-Vis spectrometer. The results show that the ZnO films are of hexagonal wurtzite structure; When the concentration of Zn (NO3)2 solution is 0.24 M, the sparse flaky ZnO thin films were prepared and the thickness and length of ZnO flaky are about 50 nm and 1~3 μm, respectively; When the electrolyte concentration is 0.16 M, hexagonal and triangular structures are observed and some lathy and conical ZnO structure start to appear; When the concentration of Zn (NO3)2 solution drops to 0.08 M, the matrix of films is still flaky ZnO, but porous structures among the flaky structures appear and the size of conical ZnO has changed, whose bottom diameter reaches 1~3 μm and length is 2~4 μm; UV-Vis absorption test results indicate the absorption peak and the bandgap of the prepared ZnO thin films are about 350 nm and 3.28 eV, respectively.

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

2012 ◽  
Vol 329 ◽  
pp. 159-164 ◽  
Author(s):  
Rosniza Hussin ◽  
Xiang Hui Hou ◽  
Kwang Leong Choy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Semiconductor Industry ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

Microstructural and Electrical Conductivity of Annealed ZnO Thin Films

2014 ◽  
Vol 970 ◽  
pp. 120-123 ◽  
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Rosli Hussin ◽  
Zuhairi Ibrahim
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Afm Micrographs

Undoped nanocrystalline ZnO thin films were deposited onto the glass substrates via the low cost sol-gel dip coating method. The as-grown ZnO films were annealed at the temperatures ranging from 400 °C to 550 °C. The X-ray diffraction (XRD) pattern revealed that the annealed ZnO films were polycrystalline with hexagonal wurtzite structure and majority preferentially grow along (002) c-axis orientation. Atomic force microscopy (AFM) micrographs showed the improvement of RMS roughness and grain size as annealing temperature increased. The ZnO films that annealed at 500 oC exhibited the lowest resistivity value.

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

2018 ◽  
Vol 281 ◽  
pp. 673-678
Author(s):  
Jing Shang ◽  
Liao Ying Zheng ◽  
Xue Shi ◽  
Jiang Tao Zeng ◽  
Guo Rong Li
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Radio Frequency Magnetron Sputtering ◽  
Native Defects ◽  
Silicon Chips ◽  
Annealing Conditions

In this work, the ZnO films are deposited on conducting silicon chips by radio frequency magnetron sputtering. The as-deposited thin films are annealed at 800 °C in a N2, O2 and CO+N2 atmosphere for 1h, respectively. The microstructure and electrical properties of the films are comprehensively investigated. XRD studies reveal that the ZnO films have a hexagonal wurtzite structure and they are highly oriented along (002) direction. The surface roughness of ZnO films decreased after annealing, which indicates better film quality. Room temperature PL spectrum is used to investigate the band gap and native defects existing in the films. Defects of thin films for different annealing conditions are analyzed in detail and the possible mechanism of the defects emission is discussed. We suggest that annealing atmosphere of CO+N2 is the most suitable annealing conditions for obtaining ZnO thin films with better crystal quality and good luminescence performance.

Structural, Optical and Magnetic Properties of Nanocrystalline Co-Doped ZnO Thin Films Grown by Sol–Gel

2017 ◽  
Vol 73 (1) ◽  
pp. 13-21 ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Iqra Shah ◽  
Bareera Zulfiqar ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Magnetic Surface ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Doped Zno ◽  
Co Doped

AbstractCobalt-doped ZnO thin films have been deposited using a sol–gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co2+ ion takes the place of a Zn2+ ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Effect of Annealing Temperature on Properties of ZnO Thin Films

2010 ◽  
Vol 150-151 ◽  
pp. 1796-1800
Author(s):  
Dong Ping Zhang ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Liang Mao ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Fundamental Absorption Edge ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Intrinsic Stress ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Dc Reactive Magnetron Sputtering

ZnO thin films were deposited by DC reactive magnetron sputtering, and the samples were annealed from 100°C to 400°C, respectively. With the help of x-ray diffractmeter (XRD), spectrophotometer, and photoluminescence (PL) spectroscopy system, the microstructure, intrinsic stress, optical properties, and PL properties were investigated, respectively. The XRD results reveal that all the ZnO films are found to have the hexagonal wurtzite structure with prominent (002) peak. With the annealing temperature increasing, the grain size increased accordingly. All the samples exhibit compressive stress, and the stress value decreasing with annealing temperature increasing. Optical transmittance spectra investigated that all the samples have high transmittance in visible range. With annealing temperature increasing, peak transmittance rising of the sample were observed. The fundamental absorption edge, which associated with band gap of materials, shifting to longer wavelength is observed too. PL results shows that the sample annealed with 300°C have higher intensity emission peak.

scholarly journals Thickness Influence on Structural and Optical Properties of ZnO Thin Films Prepared by Thermal Evaporation

2018 ◽  
Vol 31 (2) ◽  
pp. 79
Author(s):  
Samir A. maki ◽  
Auday H. shaban ◽  
Shahd A. hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Infrared Range ◽  
Atomic Force ◽  
Evaporation Technique

  A thermal evaporation technique was used to prepare ZnO thin films. The samples were prepared with good quality onto a glass substrate and using Zn metal. The thickness varied from (100 to 300) ±10 nm. The structure and optical properties of the ZnO thin films were studied. The results of XRD spectra confirm that the thin films grown by this technique have hexagonal wurtzite, and also aproved that ZnO films have a polycrystalline structure. UV-Vis measurement, optical transmittance spectra, showed high transmission about 90% within visible and infrared range. The energy gap is found to be between 3.26 and 3.14e.V for 100 to 300 nm thickness respectivly. Atomic Force Microscope AFM (topographic image ) shows the grain size increased in the range (91.29 -110.11)nm.  

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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