scholarly journals Low- and high-field electromechanical responses of relaxor-based multicomponent ceramics for application in multiregime actuators

2020 ◽  
Vol 10 (01n02) ◽  
pp. 2060004
Author(s):  
M. V. Talanov ◽  
A. A. Pavelko ◽  
L. A. Reznichenko
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Solid Solutions ◽  
High Field ◽  
Piezoelectric Coefficient ◽  
Large Signal ◽  
Electromechanical Responses ◽  
High Electric Fields

The electromechanical responses of multicomponent solid solutions [Formula: see text][Formula: see text]([Formula: see text][Formula: see text])[Formula: see text]([Formula: see text][Formula: see text])[Formula: see text]([Formula: see text][Formula: see text])[Formula: see text][Formula: see text]O3 in low and high electric fields were studied. In both cases, significant electromechanical responses are observed. In particular, the maximum values of the large-signal piezoelectric coefficient [Formula: see text] reach 1600[Formula: see text]m/V at very low values of the electric field ([Formula: see text]5[Formula: see text]kV/cm). The observed features of the electromechanical responses of the studied ceramics are advantages in terms of their possible application in actuators.

Control of polarization in bulk ferroelectrics by mechanical dislocation imprint

Science ◽  
2021 ◽  
Vol 372 (6545) ◽  
pp. 961-964
Author(s):  
Marion Höfling ◽  
Xiandong Zhou ◽  
Lukas M. Riemer ◽  
Enrico Bruder ◽  
Binzhi Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Point Defects ◽  
Piezoelectric Coefficient ◽  
Local Level ◽  
Functional Materials ◽  
Pinning Force ◽  
Large Signal ◽  
Restoring Force ◽  
Field Dependent

Defects are essential to engineering the properties of functional materials ranging from semiconductors and superconductors to ferroics. Whereas point defects have been widely exploited, dislocations are commonly viewed as problematic for functional materials and not as a microstructural tool. We developed a method for mechanically imprinting dislocation networks that favorably skew the domain structure in bulk ferroelectrics and thereby tame the large switching polarization and make it available for functional harvesting. The resulting microstructure yields a strong mechanical restoring force to revert electric field–induced domain wall displacement on the macroscopic level and high pinning force on the local level. This induces a giant increase of the dielectric and electromechanical response at intermediate electric fields in barium titanate [electric field–dependent permittivity (ε33) ≈ 5800 and large-signal piezoelectric coefficient (d33*) ≈ 1890 picometers/volt]. Dislocation-based anisotropy delivers a different suite of tools with which to tailor functional materials.

The electron transport within bulk wurtzite zinc oxide in response to strong applied electric field pulses

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Electric Field ◽  
Electric Fields ◽  
Drift Velocity ◽  
High Field ◽  
Electronic Devices ◽  
Average Energy ◽  
High Field Strength ◽  
High Electric Fields

ABSTRACTStrong short electric field pulses are used to generate broadband terahertz radiation. Understanding the transport properties under such conditions is very important for the understanding of numerous terahertz photonic and electronic devices. In this paper, we report on transport simulations of the electrons within bulk wurtzite zinc oxide for pulsed high electric fields, with pulse durations of up to 400 fs. We focus on how key electron transport characteristics, namely the drift velocity and the corresponding average energy, vary with time since the onset of the pulse. For sufficiently high-field strength selections, we find that both of these parameters exhibit peaks. In addition, an electron drift velocity undershoot is observed following this peak. A contrast with the case of gallium nitride is considered; undershoot is not observed for the case of this material. Reasons for these differences in behavior are suggested.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Effect of a High Electric Field on the Thermal and Phase Change Characteristics of an Impacting Drop

2019 ◽  
Author(s):  
Abhishek Basavanna ◽  
Prajakta Khapekar ◽  
Navdeep Singh Dhillon
Keyword(s):  
Heat Transfer ◽  
Electric Field ◽  
Phase Change ◽  
Electric Fields ◽  
High Speed ◽  
Impact Behavior ◽  
Liquid Drops ◽  
Active Interest ◽  
Post Impact ◽  
High Electric Fields

Abstract The effect of applied electric fields on the behavior of liquids and their interaction with solid surfaces has been a topic of active interest for many decades. This has important implications in phase change heat transfer processes such as evaporation, boiling, and condensation. Although the effect of low to moderate voltages has been studied, there is a need to explore the interaction of high electric fields with liquid drops and bubbles, and their effect on heat transfer and phase change. In this study, we employ a high speed optical camera to study the dynamics of a liquid drop impacting a hot substrate under the application of high electric fields. Experimental results indicate a significant change in the pre- and post-impact behavior of the drop. Prior to impact, the applied electric field elongates the drop in the direction of the electric field. Post-impact, the recoil phase of the drop is significantly affected by charging effects. Further, a significant amount of micro-droplet ejection is observed with an increase in the applied voltage.

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

Calculations of Some Transport Coefficients in Simple Semiconductors at Low Temperatures and High Electric Fields

1971 ◽  
Vol 49 (7) ◽  
pp. 876-880 ◽  
Author(s):  
Jyoti Kamal ◽  
Satish Sharma
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Low Temperatures ◽  
Transport Coefficients ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hall Constant ◽  
The Difference ◽  
High Electric Fields ◽  
Model Semiconductor

In this paper the authors have calculated Hall mobility, drift mobility, and Hall constant for a non-degenerate simple model semiconductor at low temperatures for an arbitrary electric field strength. Following Paranjape the modified distribution of phonons has been taken into account. The difference between the calculations of transport coefficients made by taking into account the modified phonon distribution and by not taking it into account is quite appreciable at high electric field. Calculations also show that for Ne = 1016/cm3 the mobility of electrons remains temperature dependent.

Research on Charge Transport in One-Dimensional Organic Semiconductors Material

2012 ◽  
Vol 531 ◽  
pp. 231-234 ◽  
Author(s):  
Wen Liu
Keyword(s):  
Electric Field ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Electric Fields ◽  
One Dimensional ◽  
Organic Semiconductor Materials ◽  
Insulator Metal Transition ◽  
The Family ◽  
High Electric Fields ◽  
Ssh Model

1D conjugated polymers belong to the family of organic semiconductor materials, in which the charge carriers are polarons or bipolarons. Charge transport in 1D organic semiconductors in the presence of high electric fields is studied within the SSH model. It is found that under a sufficiently high electric field, the polaron is dissociated into free-like electron. The electron performs Bloch oscillation (BO) in the organic semiconductors. By enhancing the electric field, BO will be destroyed and electrons can transit from the valence band to the conduction band, which is Zener tunneling in organic semiconductors. The results also indicate a field-induced insulator-metal transition.

HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES

2002 ◽  
Vol 12 (04) ◽  
pp. 1057-1081 ◽  
Author(s):  
S. M. KOMIRENKO ◽  
K. W. KIM ◽  
V. A. KOCHELAP ◽  
M. A. STROSCIO
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
High Field ◽  
Transport Model ◽  
Group Iii Nitrides ◽  
Electron Velocity ◽  
Electron Velocity Distribution ◽  
Group Iii ◽  
Field Electron ◽  
High Electric Fields

We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.

scholarly journals Corona at Large Coated Electrodes

2018 ◽  
Author(s):  
Mats Larsson ◽  
Olof Hjortstam ◽  
Håkan Faleke ◽  
Liliana Arevalo ◽  
Dong Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Negative Polarity ◽  
Electrode Geometry ◽  
Positive Polarity ◽  
Electrical Fields ◽  
Insulating Material ◽  
Air Gaps ◽  
High Electric Fields ◽  
Coated Electrodes

<p>In geometries relevant form HVDC applications where large electrodes and large air gaps are utilized, the observed corona can be quite different from geometries studied in the literature where needles or wires are used as high voltage electrodes. Corona discharges at large electrodes often initiates when the electric field on the electrode surface appears lower than the critical electric field strength, 2.4 kV/mm. Surface contamination of the electrode has been pointed out as the reason for such discharge events. Our experimental results indicate that one possible way to prevent such corona is to coat the electrode with an insulating material, such as epoxy or oxide layers. It seems that the layer separates any corona inducing particle from the electrode, which in turn hinders the corona to form. However, as the layer breaks down and gets punctured, the corona preventing propertied disappears and corona forms easily. We conclude that as long as the layer doesn’t get punctured, coating electrodes with insulating material is preventing corona to initiate at electrical fields below the critical electric field, as given by the electrode geometry. In contrast to positive polarity, for negative polarity the epoxy coating could withstand high electric fields without breaking down.</p>

Development of Aluminum Nitride/Platinum Stack Structures for an Enhanced Piezoelectric Response

2006 ◽  
Vol 955 ◽  
Author(s):  
Adam Kabulski ◽  
John Harman ◽  
Parviz Famouri ◽  
Dimitris Korakakis
Keyword(s):  
Aluminum Nitride ◽  
Electric Fields ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Materials ◽  
Metal Layer ◽  
Laser Doppler Vibrometer ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
High Electric Fields

ABSTRACTAluminum nitride (AlN) films are being investigated for piezoelectric and high temperature applications, but the piezoelectric response is still much lower than that of more common piezoelectric materials such as lead zirconate titanate or zinc oxide. A method of maximizing the piezoelectric response of aluminum nitride has been explored by depositing stack structures composed of aluminum nitride and platinum. These stack structures were created by depositing a thin, ∼50nm, metal layer in between thicker, ∼150-350nm, layers of the piezoelectric film. Platinum was chosen as the metal interlayer due to the tendency of AlN to become highly c-oriented when deposited on Pt. An electric field was applied across the structure and displacements were measured using a Laser Doppler Vibrometer. A maximum piezoelectric coefficient d33 was found to be over two times larger than the theoretical value for AlN (3.9pm/V). However, some of the stack structures were found to be conductive when measuring the displacement. I-V measurements as well as Fowler-Nordheim theory and plots were applied to investigate tunneling due to high electric fields in the structures.

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