High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias

2001 ◽  
Vol 40 (Part 2, No. 7B) ◽  
pp. L779-L782 ◽  
Author(s):  
Seiji Samukawa ◽  
Keisuke Sakamoto ◽  
Katsunori Ichiki
Keyword(s):  
Inductively Coupled Plasma ◽  
Parallel Plate ◽  
High Efficiency ◽  
Neutral Beam ◽  
Beam Generation ◽  
Inductively Coupled ◽  
Dc Bias

scholarly journals High-efficiency method for recycling lithium from spent LiFePO4 cathode

2020 ◽  
Vol 9 (1) ◽  
pp. 1586-1593
Author(s):  
Tingting Yan ◽  
Shengwen Zhong ◽  
Miaomiao Zhou ◽  
Xiaoming Guo ◽  
Jingwei Hu ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Efficiency ◽  
Optical Emission ◽  
Extraction Process ◽  
Emission Spectrometry ◽  
X Ray Diffraction ◽  
Inductively Coupled ◽  
Moisture Analysis ◽  
Lifepo4 Cathode ◽  
Solid Liquid

Abstract The extraction of Li from the spent LiFePO4 cathode is enhanced by the selective removal using interactions between HCl and NaClO to dissolve the Li+ ion while Fe and P are retained in the structure. Several parameters, including the effects of dosage and drop acceleration of HCl and NaClO, reaction time, reaction temperature, and solid–liquid ratio on lithium leaching, were tested. The Total yields of lithium can achieve 97% after extraction process that lithium is extracted from the precipitated mother liquor, using an appropriate extraction agent that is a mixture of P507 and TBP and NF. The method also significantly reduced the use of acid and alkali, and the economic benefit of recycling is improved. Changes in composition, morphology, and structure of the material in the dissolution process are characterized by inductively coupled plasma optical emission spectrometry, scanning electron microscope, X-ray diffraction, particle size distribution instrument, and moisture analysis.

Elemental Analysis and Current-Voltage Characteristics of LiZnP and LiZnAs Samples for Solid-State Neutron Detectors

2013 ◽  
Vol 1576 ◽  
Author(s):  
Benjamin W. Montag ◽  
Michael A. Reichenberger ◽  
Kevin R. Arpin ◽  
Kyle A. Nelson ◽  
Philip B. Ugorowski ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Efficiency ◽  
Electrical Characterization ◽  
Atomic Emission ◽  
Bulk Single Crystal ◽  
Neutron Detectors ◽  
Background Radiations ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Silver Epoxy

ABSTRACTResearch for a reliable solid-form semiconductor neutron detector continues because such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure, and were originally studied for photonic applications. Equimolar portions of Li, Zn, and P or As were sealed under vacuum (10-6 Torr) in quartz ampoules with a graphite lining, loaded into a compounding furnace, and heated to 560 °C to form the ternary compound, LiZnP or LiZnAs, and further annealed to promote crystallization. The chemical composition of the synthesized starting material was confirmed at Galbraith Laboratories, Inc. by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), which showed the compounds were reacted in equal ratios, 1-1-1, to form ternary compounds. Bulk single crystal samples were grown by a high temperature technique described elsewhere. Samples were cut, polished, and prepared for electrical characterization by depositing a Ti/Au contact onto one side of the one of the samples and using silver epoxy to form the other contact. Current-voltage curves were collected for a sample with silver epoxy for both anode and cathode contact, and for a sample with a Ti-Au anode contact and silver epoxy cathode contact. A much higher resistivity was calculated, 6.6 x 1010 Ω·cm, for the sample with a Ti-Au contact compared the high conductivity seen with the sample using silver epoxy contacts.

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

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