Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH4 using N2 as a Carrier Gas

2019 ◽  
Vol 3 (7) ◽  
pp. 209-210 ◽  
Author(s):  
Frederik Leys ◽  
Renaud Bonzom ◽  
Roger Loo ◽  
Antoon Theuwis ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Rates ◽  
High Growth ◽  
Carrier Gas

Low‐temperature cadmium telluride homoepitaxy at high growth rates

1989 ◽  
Vol 65 (5) ◽  
pp. 1932-1935
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Low Temperature ◽  
Cadmium Telluride ◽  
Growth Rates ◽  
High Growth

Interrelations in the growth and development of Lolium. I. Some effects of vernalization on growth and development

1965 ◽  
Vol 16 (6) ◽  
pp. 903 ◽  
Author(s):  
JH Silsbury
Keyword(s):  
Low Temperature ◽  
Growth Rates ◽  
Growth And Development ◽  
Growth Curves ◽  
High Growth ◽  
Reproductive Development ◽  
Controlled Environment ◽  
Lolium Rigidum ◽  
Vegetative Phase ◽  
Reproductive Phase

The responses of Lolium rigidum Gaud. and L. perenne L. to low temperature seed vernalization were determined by comparing the growth and development of vernalized and unvernalized plants raised in the field and in a controlled environment cabinet. Vernalization did not appear to influence growth in the vegetative phase, but usually induced earlier heading and a greater proportion of reproductive tillers. Comparisons of vernalized (reproductive) and unvernalized (vegetative) plants show increased reproductive development to be associated with higher growth rates, lower tillering, and greater weight per tiller. High growth rates during the reproductive phase are considered to be due to the ability of reproductive tillers to grow more rapidly than vegetative tillers through the growth of true stem functioning as a "sink" for assimilate. Generalized growth curves for vernalized and unvernalized ryegrass grown under long days are presented and discussed.

scholarly journals Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 568
Author(s):  
Dae-Seop Byeon ◽  
Choonghee Cho ◽  
Dongmin Yoon ◽  
Yongjoon Choi ◽  
Kiseok Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
High Order ◽  
Hydrogen Gas ◽  
Carrier Gas

Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low temperatures, particularly below 500 °C although a low thermal budget becomes more important for modern fabrication techniques. High-order silane precursors, such as disilane, trisilane, and tetrasilane, are candidates for low-temperature epitaxy due to the lower strength of the Si-Si bonds compared to that of the Si-H bonds. In addition, the consumption of vast amounts of hydrogen gas is an additional burden of the low-temperature process due to its low throughput. In this study, we explored Si and SiGe epitaxial growth behaviors using several high-order silanes under ultra-high vacuum chemical vapor deposition (UHVCVD) and low-pressure chemical vapor deposition (LPCVD) conditions without a carrier gas. Disilane showed high-quality epi-growth under both pressure conditions, whereas trisilane and tetrasilane showed enhanced growth rates and lower quality.

HIGH GROWTH-RATE DEPOSITION OF μc-Si:H THIN FILM AT LOW TEMPERATURE WITH VHF-PECVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4259-4262 ◽  
Author(s):  
HUIDONG YANG ◽  
CHUNYA WU ◽  
YAOHUA MAI ◽  
HONGBO LI ◽  
YAN LI ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Growth Rates ◽  
Optical Emission Spectroscopy ◽  
Excitation Frequency ◽  
High Growth ◽  
Optical Emission ◽  
High Growth Rate ◽  
Working Pressure ◽  
The Relationship

High growth rate deposition of μ c - Si:H film with VHF-PECVD at low temperature has been reported. Investigations showed that growth rates enhanced with higher excitation frequency and working pressure, but increased at first then decreased with the increase of plasma power. Optical emission spectroscopy (OES) was introduced to monitor VHF plasma. The relationship between the growth rates and the OES results has been discussed. Raman spectra were also used to study the a - Si:H /μ c - Si:H phase transition. Finally a high growth rate of 2.0nm/s has been obtained through the initially optimized condition.

scholarly journals High ribulose-1,5-bisphosphate carboxylase/oxygenase content in northern diatom species

2019 ◽  
Author(s):  
A. C. Gerecht ◽  
G. K. Eriksen ◽  
M. Uradnikova ◽  
H. C. Eilertsen
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Growth Rates ◽  
Total Protein ◽  
High Growth ◽  
Cellular Protein ◽  
Diatom Species ◽  
Bisphosphate Carboxylase ◽  
Total Cellular Protein

Ribulose-1,5-bisphosphate carboxylase/oxygenase (RuBisCO) is a fundamental enzyme in CO2-fixation in photoautotrophic organisms. Nonetheless, it has been recently suggested that the contribution of this enzyme to total cellular protein is low in phytoplankton, including diatoms (< 6%). Here we show that RuBisCO content is high in some diatom species isolated from northern waters (> 69°N). Two species contained the highest RuBisCO levels ever reported for phytoplankton (36% of total protein). These high RuBisCO requirements do not increase these species’ requirements for nitrogen and do not impart a fitness disadvantage in terms of growth rate. On the contrary, high RuBisCO levels in psychrophilic diatoms may be a necessary mechanism to maintain high growth rates at low temperature at which enzymatic rates are low.

GROWTH OF PIKE-PERCH SANDER LUCIOPERCA (L., 1758) (PERCIDAE) IN RESERVOIRS OF K. SATPAYEV’S CHANNEL

2018 ◽  
pp. 59-68
Author(s):  
Saule Zhangirovna Asylbekova ◽  
Kuanysh Baibulatovich Isbekov ◽  
Vladimir Nickolaevich Krainyuk
Keyword(s):  
Growth Rates ◽  
Growth Dynamics ◽  
High Growth ◽  
Water Bodies ◽  
Volga River ◽  
Trophic Resources ◽  
Pike Perch ◽  
The Amur River ◽  
Back Calculation ◽  
Abiotic And Biotic Factors

Pike-perch is an invader for the water basins of Central Kazakhstan. These species have stable self-reproductive populations in the regional waters. Back calculation method was used to investigate pike-perch growth rates in reservoirs of K. Satpayev’s channel. For comparison, the data from the other water bodies (Vyacheslavsky and Sherubay-Nurinsky water reservoirs) were used, as well as literature data. Pike-perch species from the investigated waters don’t show high growth rates. The populations from the reservoirs of K. Satpayev’s channel have quite similar growth rates with populations from the Amur river, from a number of reservoirs in the Volga river basin and from the reservoir in Spain. Sexual differences in growth have not been observed. Evaluating possible influence of various abiotic and biotic factors on the growth rate of pike-perch in the reservoirs of K. Satpayev’s channel was carried out. It has been stated that the availability of trophic resources cannot play a key role in growth dynamics because of their high abundance. Morphology of water bodies also does not play a role, as well as chromaticity, turbidity and other optical water indicators. It can be supposed that the main factor influencing growth of pike perch is the habitat’s temperature. This factor hardly ever approaches optimal values for the species in reservoirs of K. Satpaev’s channel. The possible influence of fishing selectivity on pike-perch growth rates was also evaluated. Currently, there has been imposed a moratorium on pike-perch catch. However, pike-perch is found in by-catches and in catches of amateur fishermen. It should be said that such seizures have an insignificant role in the dynamics of growth rates.

Biology of Gadus morhua in Ogac Lake, a Landlocked Fiord on Baffin Island

1967 ◽  
Vol 24 (12) ◽  
pp. 2573-2594 ◽  
Author(s):  
David G. Patriquin
Keyword(s):  
Growth Rates ◽  
Gadus Morhua ◽  
Environmental Variability ◽  
Sea Urchins ◽  
High Growth ◽  
Baffin Island ◽  
Meristic Characters ◽  
Large Size ◽  
Fin Ray ◽  
High Length

Gadus morhua L. occurs in Ogac Lake, a salt, meromictic lake on Baffin Island that receives influxes of seawater only during the highest summer tides. Cod of the order of 10,000 of lengths 25 cm and greater and 500 of lengths greater than 60 cm were present. The size ranges for various ages far exceeded those of oceanic populations. Feeding conditions were poor, and sea urchins predominated in the diet. Large cod (greater than 50 cm) were highly cannibalistic, and it was estimated that they consume of the order of 3500 fish of 20–40 cm annually. Maturation occurred at the unusually large size of 85 cm in females, and at about 65 cm in males. Apparently many of the cod never reach these sizes. Spawning was from late May to early July in 1962, and initiation of spawning appeared to be related to light. The hatching of cod larvae coincided with the appearance of the nauplii of the dominant copepod in the lake. Egg size was highly variable and exhibited a curious bimodalism. Variation in vertebral and fin-ray counts was slight in spite of high environmental variability, and thus appears largely genetically controlled. Possibly the first inhabitants came from Greenland stocks, which have high growth rates similar to the faster growing cod in the lake, and similar high length at maturity. Meristic characters also suggest affinity with Greenland rather than Labrador cod. The hydrography of the area and the possibilities of larval drift or adult migration into the lake are discussed. Cannibalism must exert continuing selection for high growth rates, but very poor feeding conditions and hierarchial dominance effects probably prevent general attainment of high growth rates.

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