Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

2013 ◽  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Monolithic Integration

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

2013 ◽  
Vol 58 (4) ◽  
pp. 375-388 ◽  
Author(s):  
M. Alexandru ◽  
V. Banu ◽  
J. Montserrat ◽  
P. Godignon ◽  
J. Millan
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Monolithic Integration

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

300C Capable Digital Integrated Circuits in SiC Technology

2012 ◽  
Vol 717-720 ◽  
pp. 1261-1264 ◽  
Author(s):  
Amita Patil ◽  
Naresh Rao ◽  
Vinayak Tilak
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Continuous Operation ◽  
Shift Register ◽  
Digital Integrated Circuits ◽  
Enhancement Mode

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

500 kHz – 5 MHz Phase-Locked Loops in High-Temperature Silicon Carbide CMOS

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000076-000083 ◽  
Author(s):  
Paul Shepherd ◽  
Ashfaqur Rahman ◽  
Shamim Ahmed ◽  
A Matt Francis ◽  
Jim Holmes ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Extreme Environments ◽  
Phase Locked Loops ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Loop Filter ◽  
Fully Integrated ◽  
Improved Performance

Silicon Carbide (SiC) integrated circuits processes show promise for improved performance in high temperature, high radiation, and other extreme environments. The circuits described are the first implementations of phase-locked or delay-locked loops in SiC. The PLL utilizes a common charge-pump topology including a fully integrated passive loop filter, and were designed with a target maximum operating frequency of 5 MHz. Component blocks use novel topologies to optimize performance in a SiC CMOS process. Experimental results of both the complete PLL as well as the Phase Frequency Detector and Voltage Controlled Oscillator components are presented. Operation of the PLL at frequencies up to 1.5 MHz is demonstrated through test results of unpackaged die.

Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Operation

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000373-000377 ◽  
Author(s):  
E.P Ramsay ◽  
D.T. Clark ◽  
J.D. Cormack ◽  
A.E. Murphy ◽  
D.A Smith ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Nand Gate ◽  
Cmos Process ◽  
Flip Flop ◽  
Aero Engines ◽  
Simple Logic ◽  
High Temperature Operation

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure

2017 ◽  
Vol 2017 (1) ◽  
pp. 000526-000530
Author(s):  
M. Barlow ◽  
A. M. Francis ◽  
J. Holmes
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Leading Edge ◽  
Limited Information ◽  
High Temperature And Pressure ◽  
Temperature And Pressure

Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 °C for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality was verified at high temperature (475 °C) as well as high pressure (1700 psig).

scholarly journals Enhanced High Temperature Power Controller

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000134-000138
Author(s):  
Joseph A. Henfling ◽  
Stan Atcitty ◽  
Frank Maldonado
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Smart Grid ◽  
Implementation Strategy ◽  
Silicon On Insulator ◽  
The Other ◽  
Power Controller ◽  
Soi Technology

This paper describes an implementation strategy used to develop a high temperature power controller. The system is based on using high-temperature (HT) silicon-on-insulator (SOI) technology with silicon carbide (SiC) based integrated circuits (ICs) to create an efficient, high-temperature power controller. Two drives were tested with this system, one using normally off JFET switching and the other using MOSFET switching. Normally off JFETs made from SiC were used to drive the output loads. Such circuit designs will improve the efficiency of future smart grid power controllers.

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