300C Capable Digital Integrated Circuits in SiC Technology

2012 ◽  
Vol 717-720 ◽  
pp. 1261-1264 ◽  
Author(s):  
Amita Patil ◽  
Naresh Rao ◽  
Vinayak Tilak
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Continuous Operation ◽  
Shift Register ◽  
Digital Integrated Circuits ◽  
Enhancement Mode

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

500°C Silicon Carbide MOSFET-Based Integrated Circuits

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000072-000075 ◽  
Author(s):  
Cheng-Po Chen ◽  
Reza Ghandi ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
High Temperatures ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Ring Oscillator ◽  
Stable Operation ◽  
Cmos Inverter ◽  
Performance Change

In this work silicon carbide MOSFET based integrated circuits such as operational amplifier. 27-stage ring oscillator and CMOS-based inverter have been designed, fabricated and successfully tested at high temperatures. Silicon carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V characteristics. Also 27-stage ring oscillator, operational amplifier and CMOS inverter tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable operation and both the ring oscillator and OpAmp survived more than 100 hours at 500°C.

4–20mA optical sensor at 300C using SiC and SOI integrated circuits

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000008-000012
Author(s):  
Cheng-Po Chen ◽  
Emad Andarawis
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Optical Sensor ◽  
Room Temperature ◽  
Silicon On Insulator ◽  
Test Results ◽  
Compression Technique ◽  
Gain Compression ◽  
Hybrid Circuit

Abstract GE is reporting test results from a hybrid circuit using high temperature capable resistors, capacitors, silicon carbide devices and silicon-on-insulator integrated circuits. The sensing circuit converts photodiode current to an industrial standard 4 to 20 mA output using a two wire configuration. Input currents at levels from 0pA to 30nA is converted to 4 to 20 mA using a gain compression technique and tested from room temperature to 300°C. Further, we show the circuit operating at 300°C for more than 2000 hours without failure.

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Development of a 300°C capable SiC based operational amplifier

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Long Term Stability ◽  
Silicon Silicon

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.

Three-Dimensional Numerical Analysis for Bolted Flange Joints Considering Effect of Creep

2018 ◽  
Author(s):  
Lewen Bi ◽  
Lanzhu Zhang
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Numerical Analysis ◽  
Yield Strength ◽  
Room Temperature ◽  
Three Dimensional ◽  
Short Term ◽  
Flange Connection ◽  
Petroleum Chemical ◽  
Bolted Flange

Bolted flange joints are widely used in petroleum, chemical, nuclear and power industries, etc. With more and more devices are used at high temperature, the performance of flange connections becomes more complex, especially with creep of different components in flange connection. At elevated temperature, with the loss of bolt force and gasket force due to creep, the joints are prone to leak. Based on this, this paper analyzed the relaxation of bolt force at elevated temperature due to creep of bolt, flange and gasket separately and simultaneously. Besides, the influence of different initial installation stress of bolts was also studied. The results showed bolted flange joints relaxed due to gasket creep during early short term service. However, contribution of bolt and flange creep became more and more significant with the extension of time. With considering the creep of bolt, flange and gasket simultaneously, 50% to 60% of the bolt material yield strength at room temperature was recommended as the bolt initial installation stress for the joint case studied in this paper.

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