scholarly journals Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Heri Sutanto ◽  
Sufwan Durri ◽  
Singgih Wibowo ◽  
Hady Hadiyanto ◽  
Eko Hidayanto

Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter was about 0.219 μm. The UV-Vis absorption spectra exhibited the absorption edges that were slightly shifted to the lower wavelength. From this result, the incorporation of aluminum into the ZnO involved a slight increase in the optical band-gap of films. The optical bands of films were 3.102 eV, 3.115 eV, 3.118 eV, 3.115 eV, 3.109 eV, and 3.109 eV for ZnO, ZnO:Al 2%, ZnO:Al 4%, ZnO:Al 6%, ZnO:Al 8%, and ZnO:Al 10%, respectively. Increase of Al doping concentration in ZnO films contributed to the increase of their optical band-gap which can be explained by the Burstein-Moss effect.

2014 ◽  
Vol 2 (2) ◽  
pp. 6-9
Author(s):  
Rajesh Kumar ◽  
◽  
Aakanksha Sahu ◽  
Narinder Arora ◽  
Rabia Sareen ◽  
...  

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.


2015 ◽  
Vol 827 ◽  
pp. 3-6 ◽  
Author(s):  
Heri Sutanto ◽  
Iis Nurhasanah ◽  
Eko Hidayanto

ZnO doped with 2~6 mol% Silver (Ag) photocatalyst thin films has been deposited on glass substrate by thermal spray coating with temperature deposition of 250°C. A gel of ZnO:Ag precursor has been synthesized by sol-gel route from aqueous/alcoholic solution of zinc acetate dehydrate and silver nitrate mixture at room temperature. The morphology of ZnO:Ag films were investigated scanning electron microscopy (SEM). 3D SEM images of ZnO:Ag thin films show the rough morphology with roughness mean square (rms) of 150 to 195 nm. The grain size of ZnO:Ag films were found in the range 76,5 to 304,8 nm. The photoactivity examination of ZnO:Ag photocatalyst films show the E. Coli bacteria degraded up to 99.99% under sunlight irradiation for 4 hours.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.


2019 ◽  
Vol 26 (03) ◽  
pp. 1850158 ◽  
Author(s):  
MARYAM MOTALLEBI AGHGONBAD ◽  
HASSAN SEDGHI

Zinc Oxide thin films were deposited on glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. Zinc acetate dihydrate was used with different molar concentrations of 0.15, 0.25 and 0.5 M. Optical properties of ZnO thin films such as dielectric constants, absorption coefficient, Urbach energy and optical band gap energy were calculated by spectroscopic ellipsometry (SE) method. The effect of zinc acetate concentration on optical properties of ZnO thin films is investigated. ZnO thin film with Zn concentration of 0.25 M had the highest optical band gap. Wemple DiDomenico oscillator model was used for calculation of the energy of effective dispersion oscillator, the dispersion energy, the high frequency dielectric constant, the long wavelength refractive index and the free carrier concentration.


2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).


2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.


Sign in / Sign up

Export Citation Format

Share Document