Polarization Reversal Characteristics of Ferroelectric-Schottky Diode Hybrid Structure

2020 ◽  
Vol 20 (7) ◽  
pp. 4303-4306
Author(s):  
Muhammad Saqib ◽  
Shenawar Ali Khan ◽  
Sheik Abdur Rahman ◽  
Woo Young Kim
Keyword(s):  
Schottky Diode ◽  
Bottom Electrode ◽  
Electronic Device ◽  
Hybrid Structure ◽  
Polarization Reversal ◽  
Electrode Structure ◽  
Positive Voltage ◽  
Type Semiconductor ◽  
Set Up ◽  
Ferroelectric Structure

The polarization reversal characteristics were measured by fabricating a device with top electrode/n-type semiconductor/ferroelectric/bottom electrode structure. It was observed that the hysteresis curves were changed according to the polarity of the applied voltage. When a positive voltage was applied, depolarization was hardly observed. However, a significant depolarization occurred when a negative voltage was applied. An attempt was made to set up an equivalent circuit using a Schottky diode to model the semiconductor-ferroelectric structure. This study is expected to be useful for setting protocol of electronic device composed of semiconductor-ferroelectric hybrid structure.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode

2020 ◽  
Vol 67 (1) ◽  
pp. 296-303 ◽  
Author(s):  
Ching-Hong Chang ◽  
Wei-Cheng Chen ◽  
Jing-Shiuan Niu ◽  
Bu-Yuan Ke ◽  
Shiou-Ying Cheng ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Hybrid Structure ◽  
Ammonia Sensing ◽  
Sensing Characteristics

scholarly journals High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1067 ◽  
Author(s):  
Hafiz Muhammad Salman Ajmal ◽  
Fasihullah Khan ◽  
Noor Ul Huda ◽  
Sunjung Lee ◽  
Kiyun Nam ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electronic Device ◽  
Deep Level ◽  
Zno Nanorods ◽  
Ultra Violet ◽  
Device Fabrication ◽  
Electrode Structure ◽  
Large Area ◽  
X Ray

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

scholarly journals Charge Injection Characteristics of Semi-Conductive Composites with Carbon Black-Polymer for HVDC Cable

Polymers ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 1134 ◽  
Author(s):  
Yanhui Wei ◽  
Mingyue Liu ◽  
Wang Han ◽  
Guochang Li ◽  
Chuncheng Hao ◽  
...  
Keyword(s):  
Carbon Black ◽  
Electric Field ◽  
Bottom Electrode ◽  
Charge Injection ◽  
Experimental Results ◽  
Uniform Electric Field ◽  
Insulation Material ◽  
Electrode Structure ◽  
Depolarization Current ◽  
Conductive Composites

Semi-conductive composites composed of carbon black-polymer play an important role in uniform electric field in high voltage direct current (HVDC) cable. They also affect space charge behaviors in the insulation material. However, the charge injection characteristics of semi-conductive composites are not detailed. In this work, the electrode structure of ‘Semi-conductive composites- Insulation material- Metal bottom’ (S-I-M) is proposed, and the currents formed by injected charges from semi-conductive composites are characterized by the thermally stimulated depolarization current (TSDC) method. Further, the experimental results based on the structure of S-I-M are compared with the traditional electrode structure of M-I-M (Metal upper electrode- Insulation material- Metal bottom electrode) and the simplified cable electrode structure of MS-I-M (Metal upper electrode-Semi-conductive electrode- Insulation material- Metal bottom electrode), respectively. The experimental results show that the semi-conductive composite plays an important role in the charge injection process and it presents a different tendency under different compound modes of temperature and electric field. For the low electric field (E ≤ 5 kV/mm) and the low temperature (T ≤ 50 °C), the current caused by the accumulated charges follows the rule, IS > IMS > IM. For the low electric field and high temperature (T > 50 °C), the current caused by the injected charges follows the rule, IMS > IM > IS. This phenomenon is closely related to the interface characterization and contact barrier.

scholarly journals Diseño de un prototipo auxiliar terapéutico para el tratamiento del dolor en enfermedades músculo-esqueléticas

2019 ◽  
pp. 16-22
Author(s):  
Franklin Cruz-Matias ◽  
Horacio Bautista-Santos ◽  
Fabiola Sánchez-Galván ◽  
Antonio Soto-Núñez
Keyword(s):  
Mobile Device ◽  
Electronic Circuit ◽  
Electronic Device ◽  
Block Diagram ◽  
Joint Mobility ◽  
Electrical Nerve Stimulation ◽  
Muscle Disorders ◽  
Set Up ◽  
Skeletal Muscle Disorders ◽  
Auxiliary Device

Musculoskeletal disorders are health problems that degenerate bones, muscles, and tendons; they range from mild discomfort to irreversible and disabling injuries, they also have symptoms such as pain and decreased joint mobility. This article presents the design and implementation of a therapeutic auxiliary device that uses Transcutaneous Electrical Nerve Stimulation (TENS) as an auxiliary tool in the treatment of pain caused by skeletal muscle disorders. The electronic device is controlled by an Arduino Nano microcontroller that communicates wirelessly (Bluetooth) with a mobile device to set up the intensity of TENS therapy. For the development of the device, a block diagram, an electronic circuit schematic diagram, and a user interface for a mobile device were made. Moreover, a survey instrument was designed to assess the level of pain. As a result, the prototype functionality is demonstrated through the implementation and validation prototype in case studies of the rehabilitation module of the Municipal DIF of Tantoyuca, Veracruz, Mexico.

Accumulated charge measurement using a substrate with a restricted-bottom-electrode structure

2019 ◽  
Vol 74 ◽  
pp. 251-257 ◽  
Author(s):  
Toshiaki Tanimura ◽  
Hiroyuki Tajima ◽  
Akinari Ogino ◽  
Yuta Miyamoto ◽  
Tomofumi Kadoya ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Electrode Structure ◽  
Charge Measurement

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

2021 ◽  
Author(s):  
Fuping Huang ◽  
Chunshuang Chu ◽  
Xingyu Jia ◽  
Kangkai Tian ◽  
Yonghui Zhang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diode ◽  
Current Density ◽  
Schottky Contact ◽  
Hybrid Structure ◽  
Optimization Strategy ◽  
Energy Bands ◽  
Spreading Effect ◽  
Forward Current ◽  
P Type

Abstract In this work, a hybrid trench MOS barrier Schottky diode (TMBS) structure is proposed to improve both the forward current density and the breakdown voltage (BV) by using TCAD simulation tools. The hybrid structure means that the conventional TMBS rectifier is combined with a p-NiO/n-GaN diode. This can modulate the lateral energy bands by removing the conduction band barriers for electrons. Thus, the improved current spreading effect and the better conductivity modulation can be obtained, leading to the increased current density. Meanwhile, the embedded p-type NiO layer can also help to reduce the electric field at Schottky contact interface and the edge of anode contact/p-NiO layer interface. Thus, the breakdown voltage can be improved remarkably. Moreover, a detailed optimization strategy for the hybrid TMBS is also analyzed by varying the p-NiO layer thickness (TNiO) and the lengths of the anode electrode that is covered on the p-NiO layer (LA).

Multistep Controllability Synthesis and Growth Mechanism of ZnO Nanopagoda for Schottky Diode Device

NANO ◽  
2016 ◽  
Vol 11 (02) ◽  
pp. 1650024 ◽  
Author(s):  
Yang Liu ◽  
Guishan Liu ◽  
Yongbing Wang ◽  
Wenyuan Gao ◽  
Hongshun Hao ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Schottky Diode ◽  
Hexagonal Wurtzite Structure ◽  
Synthesis Process ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Potentiostatic Electrodeposition ◽  
Set Up

Ordered ZnO arrays with a peculiar nanostructure were synthesized by a multistep synthesis process. The first step was the preparation of ZnO seed to induce the formation of ZnO array via potentiostatic electrodeposition method using a typical three electrode set-up. The second step was fabricating ZnO array along seed by Chemical Bath Deposition. Structural analysis of ZnO was carried out with X-ray diffraction (XRD), which showed a hexagonal wurtzite structure, and the selected area electron diffraction (SAED) patterns indicated that nanocrystalline is a part of monocrystal. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to study the microstructure, and showed a pagoda-like microstructure with a tiny top and large bottom, which had an average top diameter of exceeding 800[Formula: see text]nm at seed-depositing time of 60[Formula: see text]s, and then growth mechanisms are subsequently given a further explanation, viewed from kinetics and thermodynamics. In addition, the current–voltage curves of schottky diode devices with ZnO nanopagoda arrays revealed that ZnO films arrays along grown ZnO seed had a higher reverse saturation current than ZnO films grown without seed, which are [Formula: see text] A and [Formula: see text] A, respectively. The minimum turn-on voltage of the diode with ZnO seed deposited 60[Formula: see text]s is 0.18[Formula: see text]V, without seed is 0.52[Formula: see text]V.

COMPARISON ON THE EFFECT OF SrRuO3 AND La0.5Sr0.5CoO3 BOTTOM ELECTRODE ON DIELECTRIC PROPERTIES OF Ba0.6Sr0.4TiO3 THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2009 ◽  
Vol 16 (03) ◽  
pp. 493-497 ◽  
Author(s):  
WENFENG QIN ◽  
JIE XIONG ◽  
YANRONG LI
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Figure Of Merit ◽  
Bottom Electrode ◽  
Root Mean Square Roughness ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Merit Factor ◽  
Positive Voltage

The dielectric properties of Ba 0.6 Sr 0.4 TiO 3 (BST) thin films deposited using SrRuO 3 (SRO) materials as bottom electrode were compared with those of the films grown using La 0.5 Sr 0.5 CoO 3 (LSCO) materials as bottom electrode. X-ray diffraction scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases and atomic force microscopy showed that the root mean square roughness of BST/SRO films were similar to BST/LSCO films. The dielectric properties of the BST/SRO and BST/LSCO thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. Compared with BST/LSCO, the dielectric tunability for BST/SRO films slightly decreased, while the loss decreased synchronously. The figure of merit factor value increases from 25.67 for BST/LSCO films to 48.76 for BST/SRO films under an applied voltage of 6 V. The leakage current density of the thin films at a positive voltage of 2 V decreases from 2.41 × 10-7 A/cm 2 for BST/LSCO to 8.41 × 10-8 A/cm 2 for BST/SRO. This phenomenon is ascribed to the smaller strain induced in BST/SRO materials.

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