PRECISION AND CONFIDENCE LEVEL OF CHANGES IN MEASUREMENTS OF GAS ANALYTICAL COMPLEXES BY MEANS OF APPLYING INERT COVERS ON GAS TRACT ELEMENTS

2021 ◽  
pp. 4-13
Author(s):  
P. A. Topolianskii ◽  
S. A. Ermakov ◽  
A. P. Topolianskii
Keyword(s):  
Vapor Deposition ◽  
Air Conditioning ◽  
Chemical Vapor ◽  
Active Compounds ◽  
Sample Composition ◽  
Quality Testing ◽  
Precision And Accuracy ◽  
Air Conditioning Systems ◽  
Active Substances ◽  
Over Time

The relevance of using inert (barrier) nanocoatings for protection (passivation) of parts made of stainless steel has been considered. Such coatings ensure solving problems related to the precision and accuracy of the assay and quality testing of substances with the minimum content of active compounds in a sample, lack of stability in the content of active compounds in a sample over time, inability to treat large amounts of samples without repeated calibration. The findings of the research into the new inert SilcoPateks coating applied by plasma assisted chemical vapor deposition (PACVD process) have been presented. Such coating is used for protection against chemically active substances capable of absorbing and interacting with metals, of changing the sample composition, for countering sulfide and other corrosion. We present a comparative analysis of the SilcoPateks coating with its close analogues – SilcoNert® and DurSan® coatings developed by the world’s leading companies – the Restek Co. and SilkoTek Co. (USA). The SilcoPateks coating is widely used in the domestic equipment for chromatography, mass spectrometry, in ultraviolet fluorescent and other analyzers of substances, in samplers for storage, for transportation, testing and research of samples of substances, for stainless fixtures (valves, faucets), fittings and manometers, for sampling stands, air conditioning systems, calibration panels, coolers for cooling samples, water-oil traps (filters) and other items.

Influence Analysis for the Controllable Growth of Carbon Nanotubes with CCVD Method

2011 ◽  
Vol 101-102 ◽  
pp. 573-576
Author(s):  
Zhen Feng Sun ◽  
Le Hua Qi ◽  
Yang Shu
Keyword(s):  
Carbon Nanotubes ◽  
Growth Rate ◽  
Vapor Deposition ◽  
Growth Characteristic ◽  
Chemical Vapor ◽  
Theoretical Derivation ◽  
Atom Concentration ◽  
Temperature Growth ◽  
Controllable Growth ◽  
Over Time

To control the length and morphology of carbon nanotubes(CNTs) is difficult in its producing process. Influencing factors of length and morphology of carbon nanotubes have been analyzed in the catalytic chemical vapor deposition (CCVD) process. According to the growth characteristic of carbon nanotubes, the diffusion model was developed. Over time, the diffusion potential decreases due to a reduction in the carbon atom concentration gradient. With the model, the shape of catalytic particle is analyzed. From theoretical derivation, it is demonstrated that with the temperature ranging from 1173K to1373K, the growth rate raises up sharply with the increasing of temperature. Growth rate of CNTs increases with increasing layers at the same temperature.

Monitoring and Control in Vapor phase Epitaxy

1997 ◽  
Vol 502 ◽  
Author(s):  
T. P. Pearsall
Keyword(s):  
Control System ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Temperature Control System ◽  
Monitoring And Control ◽  
Non Invasive ◽  
Innovative Solutions ◽  
Precision And Accuracy ◽  
And Control

ABSTRACTMonitoring and control in epitaxy based on chemical vapor deposition is a challenge created by growth conditions that often preclude more common sensors like thermocouples and mass spectrometry. We report results of experiments to measure and control temperature and flux by non-invasive optical sensing. We have developed a temperature control system with precision and accuracy better that 5°C. Satisfactory control of flux poses difficulties that will require innovative solutions before a useful control system can be developed.

scholarly journals Catalyst-Mediated Enhancement of Carbon Nanotube Textiles by Laser Irradiation: Nanoparticle Sweating and Bundle Alignment

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 368
Author(s):  
Thurid S. Gspann ◽  
Adarsh Kaniyoor ◽  
Wei Tan ◽  
Philipp A. Kloza ◽  
John S. Bulmer ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Processes ◽  
Conductive Network ◽  
Catalyst Nanoparticles ◽  
Residual Catalyst ◽  
Sample Composition ◽  
Underlying Mechanisms ◽  
Catalyst Chemical Vapor Deposition

The photonic post-processing of suspended carbon nanotube (CNT) ribbons made by floating catalyst chemical vapor deposition (FC-CVD) results in selective sorting of the carbon nanotubes present. Defective, thermally non-conductive or unconnected CNTs are burned away, in some cases leaving behind a highly crystalline (as indicated by the Raman G:D ratio), highly conductive network. However, the improvement in crystallinity does not always occur but is dependent on sample composition. Here, we report on fundamental features, which are observed for all samples. Pulse irradiation (not only by laser but also white light camera flashes, as well as thermal processes such as Joule heating) lead to (1) the sweating-out of catalyst nanoparticles resulting in molten catalyst beads of up to several hundreds of nanometres in diameter on the textile surface and (2) a significant improvement in CNT bundle alignment. The behavior of the catalyst beads is material dependent. Here, we show the underlying mechanisms of the photonic post-treatment by modelling the macro- and microstructural changes of the CNT network and show that it is mainly the amount of residual catalyst which determines how much energy these materials can withstand before their complete decomposition.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

Microstructures of SiC and Si3N4 with fibrous inclusions

1986 ◽  
Vol 44 ◽  
pp. 492-493
Author(s):  
N. J. Tighe ◽  
J. Sun ◽  
R.-M. Hu
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crack Deflection ◽  
Fiber Bundles ◽  
High Temperature Strength ◽  
Graphite Fiber ◽  
Triple Junctions ◽  
Transmission Electron ◽  
Compact Graphite ◽  
Deposition Techniques

Particles of BN,and C are added in amounts of 1 to 40% to SiC and Si3N4 ceramics in order to improve their mechanical properties. The ceramics are then processed by sintering, hot-pressing and chemical vapor deposition techniques to produce dense products. Crack deflection at the particles can increase toughness. However the high temperature strength and toughness are determined byphase interactions in the environmental conditions used for testing. Examination of the ceramics by transmission electron microscopy has shown that the carbon and boron nitride particles have a fibrous texture. In the sintered aSiC ceramic the carbon appears as graphite fiber bundles in the triple junctions and as compact graphite particles within some grains. Examples of these inclusions are shown in Fig. 1A and B.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD

1993 ◽  
Vol 51 ◽  
pp. 918-919
Author(s):  
K.L. More ◽  
R.A. Lowden ◽  
T.M. Besmann
Keyword(s):  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Chemical Vapor ◽  
Processing Method ◽  
Crystalline Material ◽  
Structural Ceramic ◽  
Alternative Processing ◽  
Strong Candidate ◽  
Hot Pressing Sintering ◽  
Processing Techniques

Silicon nitride possesses an attractive combination of thermo-mechanical properties which makes it a strong candidate material for many structural ceramic applications. Unfortunately, many of the conventional processing techniques used to produce Si3N4, such as hot-pressing, sintering, and hot-isostatic pressing, utilize significant amounts of densification aids (Y2O3, Al2O3, MgO, etc.) which ultimately lowers the utilization temperature to well below that of pure Si3N4 and also decreases the oxidation resistance. Chemical vapor deposition (CVD) is an alternative processing method for producing pure Si3N4. However, deposits made at temperatures less than ~1200°C are usually amorphous and at slightly higher temperatures, the deposition of crystalline material requires extremely low deposition rates (~5 μm/h). Niihara and Hirai deposited crystalline α-Si3N4 at 1400°C at a deposition rate of ~730 μm/h. Hirai and Hayashi successfully lowered the CVD temperature for the growth of crystalline Si3N4 by adding TiCl4 vapor to the SiCl4, NH3, and H2 reactants. This resulted in the growth of α-Si3N4 with small amounts of TiN at temperatures as low as 1250°C.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

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