Platform for in-planeZTmeasurement and Hall coefficient determination of thin films in a temperature range from 120 K up to 450 K

2016 ◽  
Vol 31 (20) ◽  
pp. 3196-3204 ◽  
Author(s):  
Vincent Linseis ◽  
Friedemann Völklein ◽  
Heiko Reith ◽  
Peter Woias ◽  
Kornelius Nielsch
Keyword(s):  
Thin Films ◽  
Hall Coefficient ◽  
Temperature Range ◽  
Image Position

Abstract

On the determination of Young’s modulus of thin films with impulse excitation technique

2016 ◽  
Vol 32 (3) ◽  
pp. 497-511 ◽  
Author(s):  
M.F. Slim ◽  
A. Alhussein ◽  
A. Billard ◽  
F. Sanchette ◽  
M. François
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Impulse Excitation ◽  
Image Position

Abstract

Transport Properties of CaSi2 and Ca2Si Thin Films

2020 ◽  
Vol 312 ◽  
pp. 3-8
Author(s):  
L. Dermenji ◽  
K.G. Lisunov ◽  
Konstantin Nickolaevich Galkin ◽  
Dmitrii L. Goroshko ◽  
E.A. Chusovitin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
Complex Dependence

Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature range. On the other hand, the resistivity of Ca2Si is pertinent of semiconductors. Namely, it is activated below T ~ 200 K, exhibiting different slopes of ln r vs. T -1 plots at lower and higher T, and a weak increase between T ~ 200 - 300 K. Both materials demonstrate a complex dependence of R (T), including a change of the sign. Transport properties above have been analyzed assuming two groups of charge carriers, electrons and holes, contributing them.

scholarly journals Electrical Characterization of Sige Thin Films

1991 ◽  
Vol 234 ◽  
Author(s):  
J. A. Mccormack ◽  
J.-P. Fleurial
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Hall Coefficient ◽  
Liquid Phase Epitaxy ◽  
Bulk Material ◽  
Electrical Characterization ◽  
Temperature Range

ABSTRACTAn apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

STEM and ELS Observation of Early Oxide Formation on the Surface of Cr Thin Films

1980 ◽  
Vol 38 ◽  
pp. 412-413
Author(s):  
Fumio Watari ◽  
J. M. Cowley
Keyword(s):  
Thin Films ◽  
Optical System ◽  
Room Temperature ◽  
Oxide Formation ◽  
Initial Nucleation ◽  
Diffraction Patterns ◽  
Relationship Of ◽  
Multiple Twinning ◽  
Moderately High Temperature

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.

scholarly journals Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO4) Thin Films

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2126
Author(s):  
Junyoung Lee ◽  
Woojun Seol ◽  
Gopinathan Anoop ◽  
Shibnath Samanta ◽  
Sanjith Unithrattil ◽  
...  
Keyword(s):  
Thin Films ◽  
Solution Process ◽  
Intermediate Temperature ◽  
Perovskite Oxide ◽  
Temperature Phase ◽  
Polar Phase ◽  
Practical Applications ◽  
Temperature Range ◽  
Potential Alternative ◽  
Temperature Window

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO4) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO4 crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO4 should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO4 were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO4 thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.

Sign in / Sign up

Export Citation Format

Share Document