Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

2012 ◽  
Vol 1394 ◽  
Author(s):  
Auxence Minko ◽  
Gustavo S. Belo ◽  
Sergei Rudenja ◽  
Douglas A. Buchanan
Keyword(s):  
Low Power ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectrics ◽  
Hafnium Dioxide ◽  
Hafnium Silicate ◽  
Sputtering Deposition ◽  
Data Processing Software ◽  
Interface Modeling ◽  
Broad Region ◽  
Xps Depth Profile

ABSTRACTHafnium dioxide gate dielectrics, prepared by DC magnetron with low-power sputtering deposition followed by a low-temperature thermal oxidation, show greatly improved interfacial and electrical properties. Ellipsometry and X-ray photoelectron spectroscopy (XPS) measurements show a good stoichiometric HfO2 thin films with a refractive index of 1.9 and an Hf:O ratio of 1:2. The results obtained after analysis, quantification and calculation through XPS depth profile method, angle resolved XPS and interface modeling by XPS data processing software suggest a development of a complex three layer dielectric stack, including hafnium dioxide layer, a narrow interface of hafnium silicate and broad region of oxygen diffusion into silicon wafer. The measured dielectric constant of the HfO2 was about 22. The film band-gap was found to be ∼ 5.2 eV.

scholarly journals Structure and Characterization of TiC/GLC Multilayered Films with Various Bilayers Periods

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 787
Author(s):  
Weiqi Wang ◽  
Xiaoming Ling ◽  
Rui Wang ◽  
Wenhao Nie ◽  
Li Ji ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
Closed Field ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Sputtering Deposition ◽  
X Ray ◽  
Mechanical And Tribological Properties ◽  
Self Organizing

The spontaneously self-organizing multilayered graphite-like carbon (denoted as GLC) /TiC films with various bilayer periods in the range of 13.3–17.5 nm were deposited on silicon and 1Cr18Mn8Ni5N stainless steel substrates using closed field magnetron sputtering deposition facility. The microstructures and chemical compositions of the prepared multilayered films were characterized by scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy respectively. The self-organizing multilayered structures in all of the films consisted of titanium carbide layers and sp2-rich carbon layers periodically alternate arrangement. The TiC contents and bilayer periods of the multilayered films can be controlled by means of adjusting of sputtering current of graphite target. Furthermore, the mechanical and tribological performances of the prepared films were appraised by nano-indentor, scratch measures, and ball-on-plate tribometer respectively. The results indicated that multilayer structure endowed the as-deposited TiC/GLC films outstanding mechanical and tribological properties, especially the multilayer film with 15.9 nm bilayer period deposited at 10 A sputtering current showed the excellent adhesion strength and hardness; Simultaneously it also exhibited the lowest average friction coefficient in the humid environment owing to its high content of sp2 hybrid carbon.

Analysis of Surface Properties of Diamond-Like Carbon Films by a Sputtering Deposition

2013 ◽  
Vol 662 ◽  
pp. 505-510 ◽  
Author(s):  
Jium Fang ◽  
Maw Tyan Sheen ◽  
Ming Der Jean
Keyword(s):  
Photoelectron Spectroscopy ◽  
Fuzzy Inference ◽  
Carbon Films ◽  
Experimental Results ◽  
Wear Volume ◽  
Diamond Like Carbon ◽  
Sputtering Deposition ◽  
Tribological Behaviors ◽  
Predicted Values ◽  
Inference Systems

A new approach with adaptive network-based fuzzy inference systems (ANFIS) based on experimental designs was used to model and characterize the tribological behaviors of diamond-like carbon (DLC) films deposited by a magnetron sputtering system. An orthogonal array experiment was introduced and the effects of deposited parameters on the films were systematically explored. The films were analyzed by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). In this study, a group of highly developed hillock-like textures appeared and a lower wear volume loss became visible in the DLC films. Furthermore, the predicted values and experimental results, in which the ANFIS effectively predicts the tribological behaviors of the DLC films, are similar. It was experimentally confirmed the ANFIS predictions agreed with the experiments. Therefore, the experimental results demonstrate the tribological properties on DLC multilayer films are accurately predicted by ANFIS, thereby justifying the reliability and feasibility of the approach.

Nitridation of Hafnium Silicate Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Hood Chatham ◽  
Yoshi Senzaki ◽  
Jeff Bailey ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Nitrogen Plasma ◽  
Process Conditions ◽  
Atomic Nitrogen ◽  
Hafnium Silicate ◽  
X Ray ◽  
Nitrogen Concentrations ◽  
Nitridation Temperature

ABSTRACTWe discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.

Limiting Native Oxide Regrowth for High-k Gate Dielectrics

2003 ◽  
Vol 765 ◽  
Author(s):  
K. Choi ◽  
H. Harris ◽  
S. Gangopadhyay ◽  
H. Temkin
Keyword(s):  
Silicon Oxide ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Hafnium Dioxide ◽  
Electron Beam Evaporation ◽  
Native Oxide ◽  
Device Applications ◽  
The Difference ◽  
Cleaning Methods

AbstractA cleaning process resulting in atomically smooth, hydrogen-terminated, silicon surface that would inhibit formation of native silicon oxide is needed for high-k gate dielectric deposition. Various cleaning methods thus need to be tested in terms of resistance to native oxide formation. Native oxide re-growth is studied as a function of exposure time to atmospheric ambient using ellipsometry. Hafnium dioxide film (k ~23) is deposited on the as-cleaned substrates by electron beam evaporation and subsequently annealed in hydrogen. The difference in the effective oxide thickness re-grown on surfaces treated with the conventional RCA and modified Shiraki cleaning methods, after one-hour exposure, can be as large as 2 Å. This is significant in device applications demanding equivalent oxide thickness less than 20 Å. The degree of hydrogen passivation, surface micro-roughness and organic removal capability are considered to be the main factors that explain the differences between the cleaning methods. Data derived from capacitance-voltage analysis of test capacitors verified the trend observed in the native oxide thickness measurements. An increase of 10~15 % in accumulation capacitance is observed in the samples treated by the new cleaning method.

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