Effects of Substrate Pre-deposition Annealing and Deposition Parameters on the Properties of RF Sputter-deposited ZnO Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
T. N. Oder ◽  
M. McMaster ◽  
A. Smith ◽  
N. Velpukonda ◽  
D. Sternagle
Keyword(s):  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Ultra High Purity ◽  
Luminescence Peak ◽  
Sputter Deposited ◽  
P Type

ABSTRACTZinc Oxide thin films were deposited on sapphire substrates by radio frequency (RF) magnetron sputtering from an ultra-high purity ZnO solid target. The ZnO films were deposited on sapphire substrates heated in oxygen and/or in vacuum prior to deposition. Additional parameters investigated included the substrate temperature varied from 25 °C to 600 °C, the deposition gas pressure varied from 5 mTorr to 40 mTorr and the gas flow rate varied from 5 to 30 standard cubic centimeter per minute (sccm). The resulting films were annealed using a rapid thermal processor in N2 gas at 900 °C for 5 min. Analyses carried out using photoluminescence spectroscopy (PL) and X-ray diffraction (XRD) measurements indicate that films deposited at 300 °C using Ar:O2 (1:1) had the best optical and microstructure qualities. Pre-heating the sapphire substrate in oxygen prior to deposition was found to create a smoother sapphire surface, and this produced a ZnO film with greatly improved qualities. This film had a luminescence peak at 3.362 eV with a full-width-half maximum (FWHM) value of 15.3 meV when measured at 11 K. The XRD 2θ-scans had peaks at 34.4° with the best FWHM value of only 0.10°. Production of high quality ZnO materials is a necessary step towards realizing highly conductive p-type doped ZnO materials which is currently a major goal in research efforts on ZnO.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

1991 ◽  
Vol 238 ◽  
Author(s):  
Hong Koo Kim ◽  
Michelle Mathur
Keyword(s):  
Rf Magnetron Sputtering ◽  
Breakdown Field ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Structural And Electrical Properties ◽  
Deposited Films

ABSTRACTSputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.

Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

2005 ◽  
Vol 475-479 ◽  
pp. 1825-1828
Author(s):  
Ju Hyun Myung ◽  
Nam Ho Kim ◽  
Hyoun Woo Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Sputter Deposited

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

2012 ◽  
Vol 557-559 ◽  
pp. 1984-1987
Author(s):  
Hui Qun Zhu ◽  
Yu Ming Li ◽  
Jun Long Li ◽  
Ling Sun
Keyword(s):  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Phosphorus Concentration ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Measurement Results ◽  
Doped Zno ◽  
P Type

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017 cm-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Influence of Reactive Oxygen Gas on Sputtered-Vanadium Oxide Films under Post-Annealing in Vacuum

2021 ◽  
Vol 872 ◽  
pp. 27-31
Author(s):  
S.Tipawan Khlayboonme ◽  
Thowladda Warawoot
Keyword(s):  
Vanadium Oxide ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Post Annealing ◽  
Different Temperatures ◽  
Vanadium Oxide Thin Films ◽  
Reactive Rf Magnetron Sputtering

Vanadium oxide thin films were deposited on glass substrates by O2 reactive-RF magnetron sputtering from a vanadium (V) target without substrate-heating. The percentages of O2 gas were 10%, 7.5%, 6.0%, 5.0% and 2.5%. The total gas flow rate (O2/Ar) was kept at 25 sccm. As-deposited films were experienced post-annealing process at different temperatures and times. The crystallinity and chemical bonding states of films were examined by X-ray diffraction and Raman spectroscopy. The condition in annealing to active crystallinity depended on an earlier composition of the films. As O2-gas percentages were 10% and 7.5%, after annealing, the as-deposited VxOy films were transformed into crystalline V2O5 films. With decreasing in O2 percentage to 5.0% and 2.5%, the films were transformed into V2O3 and VO films, respectively. The films deposited with 6.0% O2 were crystallized to VO2 with phase B after annealing with 500 °C 15 h. By applying a longer time to 30 h at the high temperature 500 °C in annealing, VO2 films revealed only phase M formation.

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

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