Characterization of rf-sputtered HfMgZnO thin films

2012 ◽  
Vol 1432 ◽  
Author(s):  
Hantsun Chung ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Hafnium Oxide ◽  
Short Range ◽  
Room Temperature ◽  
Visible Region ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Peak Intensity ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTMgZnO becomes amorphous or short-range-ordered with the addition of hafnium oxide. The films are rf-sputter deposited onto glass substrates (Eagle 2000, Corning Inc.) from Mg0.05HfxZn0.95-xO targets (x=0, 0.025, 0.05, 0.075, 0.1) in pure Ar ambient at room temperature. The sputtered Mg0.05Zn0.95O exhibits strong (002) preferred orientation with XRD peak located at 2θ=34.16o. The XRD peak intensity is also greatly reduced, indicating the material amorphorization proceeds with the addition of Hf. The grain size, estimated from the full-width-at-half-maximum (FWHM) of the (002) XRD peak, decreases from 24.1 to 3.3 nm as the Hf content x increases from 0 to 0.025 in Mg0.05HfxZn0.95-xO. No sharp XRD peaks are detected in the as-sputtered films when more than 5.0 at.% Hf are added into the materials. The films remain in amorphous or short-range-ordered states after annealing at 600 oC for 30 mins. All Mg0.05HfxZn0.95-xO films (100 nm in thickness) are highly transparent (> 80 %) in the visible region from 400 to 800 nm and have sharp absorption edges in the UV region. The tauc bandgap ΔE (eV), as a function of hafnium composition x, is fitted as ΔE=3.336+6.08x for room temperature as-deposited films, and ΔE=3.302+2.60x for films after 30 min 600 oC annealing. The annealing process decreases the bandgap shift caused by the incorporation of Hf in the materials.

scholarly journals Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Sin-Liang Ou ◽  
Feng-Min Lai ◽  
Lun-Wei Yuan ◽  
Da-Long Cheng ◽  
Kuo-Sheng Kao
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Deposition Parameters ◽  
Sample Position ◽  
Doped Zno

The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR/ris introduced. Here,ris the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR/ris fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

EFFECTS OF Al, Ga-DOPING ON TRANSPARENT CONDUCTING PROPERTIES OF AMORPHOUS ZnO-SnO2 FILMS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3902-3907 ◽  
Author(s):  
TOSHIHIRO MORIGA ◽  
YUSUKE NISHIMURA ◽  
HIROSHI SUKETA ◽  
KEI-ICHIRO MURAI ◽  
KAZUHIRO NOGAMI ◽  
...  
Keyword(s):  
Visible Region ◽  
Doping Effect ◽  
Amorphous Films ◽  
Current Ratio ◽  
Transparent Films ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Region 10 ◽  
Ga Doping ◽  
Deposited Films

ZnO SnO 2 thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al (4wt%), and ZnO:Ga (6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as IZn/IZ + ISn ( ZnO target current divided by the sum of ZnO and SnO 2 target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO 2 system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al (4 wt %)- SnO 2 and ZnO:Ga (6 wt %)- SnO 2 systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10-2 Ω cm for all the systems. Al , Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO 2 system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al , Ga doping.

Effect of pH Value on Structural and Optical Properties of Transparent Nano-Crystalline TiO2 Films Prepared by Sol-Gel Dip-Drive Coating

2013 ◽  
Vol 678 ◽  
pp. 80-85 ◽  
Author(s):  
Krishnasamy Sakthivel ◽  
T. Venkatachalam
Keyword(s):  
Ab Initio ◽  
Room Temperature ◽  
Ph Value ◽  
Sol Gel ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Ph Values ◽  
Nano Crystalline ◽  
Crystalline Nature ◽  
Deposited Films

Thin films of TiO2 have been deposited on well cleaned glass substrates by Sol-Gel dip-drive coating technique. The films have been prepared at three different pH values (1, 3.5 & 9) of Sol and annealed in muffle furnace at 550°C for one hour and are allowed to cool to room temperature. The films were characterized by XRD, EDAX, SEM and UV-Vis Spectrophotometer. The as deposited films were found to be amorphous in nature. The annealed films exhibit anatase in crystalline structure. The EDAX results have shown that all the films are maintained with TiO2 in composition. The XRD results reveal that they are nano-crystalline in nature and the crystalline nature increases with pH of the Sol. The transmittance and absorbance spectra have shown that the films are transparent and band gap of the films are of the order of 3.2eV. The ab initio studies of TiO2 (using GGA) was performed with Vienna ab initio Simulation package and the band structure and effective masses of the electrons and holes were determined.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Electrodeposition and Characterization of Very Thin Film II-VI Compounds for Novel Superlattice Solar Cells

2010 ◽  
Author(s):  
Sukriti Jain ◽  
Pritpal Singh
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Lead Telluride ◽  
Glass Substrates ◽  
Absorption Spectrophotometry ◽  
Layer Structures ◽  
Deposited Films ◽  
Scanning Electron ◽  
Dense Films

Thin films of lead telluride (PbTe) and zinc telluride (ZnTe) have been electrodeposited on indium tin oxide (ITO)-coated glass substrates. Uniform dense films of ∼ 100 nm have been obtained for both materials. The electrochemical deposition procedures for fabricating these films are described. The as-deposited films have been characterized by scanning electron microscopy, energy dispersive spectroscopy, and optical absorption spectrophotometry. Multi layer structures, up to 3 layers, of ZnTe/PbTe films, have been fabricated.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

The Effect of Sputtering Power on the Properties of One-step Deposited Cu2ZnSnSe4 Thin Films

2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Room Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Sputtering Power ◽  
One Step ◽  
Deposited Films

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.

Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

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