Chemical Vapor Deposition of ZrxTi1-xO and HfxTi1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors

2006 ◽  
Vol 917 ◽  
Author(s):  
Qi-Yue Shao ◽  
Ai-Dong Li ◽  
Wen-Qi Zhang ◽  
Di Wu ◽  
Zhi-Guo Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Heating Time ◽  
Oxide Semiconductor ◽  
Molar Ratio ◽  
X Ray ◽  
The Individual

AbstractZr/Ti an Hf/Ti composite nitrate were developed as single-source precursors for deposition of multi-component metal oxide films. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) analyses confirmed that ZrxTi1-xO2 and HfxTi1-xO2 films were successfully prepared by the CVD technique from these composite precursors. The Zr/Ti nitrate can be taken as a solid solution of the individual Zr and Ti nitrate, and the Zr/Ti molar ratio in as-deposited ZrxTi1-xO2 films is nicely consistent with that of the precursor. The Hf/Ti nitrate appears to be a mixture of the Zr and Ti nitrates and the composition of the as-deposited HfxTi1-xO2 films depends remarkably on the heating time of precursor. Both ZrxTi1-xO2 and HfxTi1-xO2 films exhibit trading-off properties between band gap and dielectric constant, which suggesting that ZrxTi1-xO2 and HfxTi1-xO2 can be the promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the next generation complementary metal-oxide-semiconductor transistor (CMOS) devices.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

WE-G-204-04: Focal Spot Deblurring For High Resolution Amorphous Selenium (aSe) Complementary Metal Oxide Semiconductor (CMOS) X-Ray Detector

2015 ◽  
Vol 42 (6Part40) ◽  
pp. 3694-3694
Author(s):  
S Setlur Nagesh ◽  
R Rana ◽  
M Russ ◽  
C Ionita ◽  
D Bednarek ◽  
...  
Keyword(s):  
High Resolution ◽  
Metal Oxide ◽  
Focal Spot ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Amorphous Selenium ◽  
Oxide Semiconductor ◽  
X Ray
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