Laser Enhanced Selective Epitaxy of ιii-V Compounds

1987 ◽  
Vol 101 ◽  
Author(s):  
N.H. Karam ◽  
H. Liu ◽  
I. Yoshida ◽  
T. Katsuyama ◽  
S.M. Bedair ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Direct Writing ◽  
Growth Technique ◽  
X Ray ◽  
Selective Epitaxial Growth ◽  
Gaas Substrates ◽  
Ion Laser

ABSTRACTSelective epitaxial growth of III-V compounds based on GaAs has been achieved using Ar+ ion laser assisted chemical vapor deposition (LCVD) on GaAs substrates. The growth rate, at carefully selected growth conditions, can be controlled to a few Å/s at bias temperatures as low as 250°C by conventional LCVD multi-scan technique. Typical Gaussian thickness profiles are achieved by this growth technique. On the other hand, flat top thickness profiles are achieved with direct writing of GaAs mono-layers by laser assisted atomic layer epitaxy (LALE). X-ray topography is demonstrated as a powerful tool for characterizing the grown films and photoluminescence shows that the quality of the grown films are comparable with those grown by conventional MOCVD or ALE.

Laser Stimulated Deposition of GaAs, GaAsP and GaAsP-GaAs Superlattices

1986 ◽  
Vol 75 ◽  
Author(s):  
N. H. Karam ◽  
S. M. Bedair ◽  
N. A. El-Masry ◽  
D. Griffis
Keyword(s):  
Laser Beam ◽  
Growth Conditions ◽  
Direct Writing ◽  
Gaas Substrates ◽  
Laser Beam Irradiation ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Potential Applications ◽  
Ion Laser ◽  
Deposited Films

AbstractAn Ar+ ion laser has been used for direct writing of GaAs and GaAsP single crystal films on thermally biased GaAs substrates. Multiple scanning of the laser beam at speeds in the range 100–200 μm/s at carefully selected growth conditions resulted in single crystalline selectively deposited films. Photoluminescence indicates that these deposited films have optical properties that are comparable with the conventionally (MOCVD) grown material. Laser beam irradiation has been used to form a superlattice (SL) structure which has been demonstrated in the GaAsP-GaAs system. When a GaAs substrate is exposed to fluxes of AsH3, PH3 and TMG at 500°C, only GaAs will be deposited because of the insufficient cracking of PH3. However, localized laser heating results in GaAsP deposition. A GaAsP-GaAs superlattice with a period of about 400 Å has been synthesized. This laser induced technique can thus have potential applications in the generation of abrupt interfaces without the use of shutters as in MBE or gas switching as in MOCVD.

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Phase Selectivity

Particle-Assisted Oriented Deposition of Diamond Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray ◽  
Diamond Particles ◽  
Film Synthesis ◽  
Diamond Powders ◽  
Hot Filament

AbstractWe have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

scholarly journals Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates

1995 ◽  
Vol 18 (4) ◽  
pp. 247-258
Author(s):  
P. W. Sze ◽  
K. F. Yarn ◽  
Y. H. Wang ◽  
M. P. Houng ◽  
G. L. Chen
Keyword(s):  
Growth Temperature ◽  
Vapor Deposition ◽  
Gaas Substrate ◽  
Concentration Ratio ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Double Crystal ◽  
X Ray ◽  
Gaas Substrates ◽  
Growth System

CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used as the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to 5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the best growth temperature and the full width at half maximum (FWHM) of the dominated peak is about 1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC) indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable value about 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and the DETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one ever reported to date.

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
E. Michel ◽  
H. Mohseni ◽  
J. Wojkowski ◽  
J. Sandven ◽  
J. Xu ◽  
...  
Keyword(s):  
Thermal Imaging ◽  
Focal Plane ◽  
Growth Conditions ◽  
Substrate Material ◽  
Focal Plane Arrays ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sapphire Substrates ◽  
Gaas Substrates

ABSTRACTIn this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA's) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result from using GaAs, Si, or Al203. First, InSb FPA's on these materials do not require thinning as with detectors fabricated from bulk InSb. In addition, these substrates are available in larger sizes, are semi-insulating (GaAs and sapphire), and are less expensive than InSb.Optimum growth conditions have been determined and discrete devices have been fabricated on each substrate material. The structural, electrical, and optical properties were verified using x-ray, Hall, photoresponse, and photoluminescence (PL) measurements. Measured x-ray Full Widths at Half Maximum (FWHM) were as low as 55 and 100 arcsec for InSb epilayers on GaAs and Si, respectively. Hall mobilities were as high as 128,000, 95,000 and 72,000 cm2/V-sec at 200 K, 77 K, and room temperature, respectively. In addition, 77 K PL linewidths were as low as 18, 20, and 30 meV on GaAs, Si, and sapphire substrates respectively, well below the 48 meV value previously reported in the literature.In collaboration with Lockheed Martin Fairchild Systems (LMFS), IR thermal imaging has been obtained from InSb FPA's on GaAs and Si substrates. This is the first successful IR thermal imaging from heteroepitaxially grown InSb. Because of the high quality substrates, larger areas, and higher yields, this technology is very promising for challenging traditional InSb FPA hybrid technology.

Monitoring of indium x-ray peak to optimize InxGa1-xN layer grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 449 ◽  
Author(s):  
Hongqiang Lu ◽  
Malathi Thothathiri ◽  
Ziming Wu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Quantitative Measure ◽  
Chemical Vapor ◽  
Droplet Formation ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTIndium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Structure of Chalcogen-Stabilized GaAs Interface

1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa
Keyword(s):  
Fine Structure ◽  
Silicon Dioxide ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Model ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
A.E. Milokhin ◽  
I.E. Trofimov ◽  
M.V. Petrov ◽  
F.F. Balakirev ◽  
V.D. Kuzmin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Buffer Layer ◽  
Lattice Constant ◽  
Strong Influence ◽  
High Crystalline Quality ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates

Semiconductor heterostuctures ZnxCd1−xTe/CdTe were found to be of interest recently due to their potential practical usage. The reason for this is the beautiful variety of electrical heterostucture properties which arise from the strong influence of elastic deformation distribution. Thin epilayer films and superlattices ZnxCd1−xTe/CdTe were prepared on GaAs semi-isolator substrates by MBE technology with RHEED oscillation measurements of the deposited layers. X-ray measurements have shown high crystalline quality of the samples.We have performed Raman scattering studies of ZnxZnxCd1−xTe/CdTe structures. The data obtained were interpreted as a proff of the pseudomorphous growth model. That is, ZnxCd1−xTe/CdTe SLS keeps the lattice constant of the buffer layer.

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