Identification of W20O58 Phase In CVD Tungsten Films

1989 ◽  
Vol 168 ◽  
Author(s):  
M. Lawrence ◽  
A. Dass ◽  
Siva Sivaram ◽  
Bryan Tracy

AbstractThin films of tungsten grown in a CVD reactor by the reduction of hydrogen and silane consisted of a two phase microstructures; a matrix phase of bcc tungsten, and a second phase of W20O58. The second phase is uniformly distributed in the film and does not afeoct 5athe electrical resistivity of hydrogenreduced films (8 μohm-cm). However, dissolved oxygen in the silane-reduced film contributes to the observed higher electrical resistivity (13 μohm-cm) along with smaller grain size. The larger amount of oxide in the hydrogen-reduced film correlates with its slower growth rate when compared to the silane-reduced film which contained a smaller amount of oxide phase.

1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.


2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).


1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.


2016 ◽  
Vol 35 (10) ◽  
pp. 1005-1011
Author(s):  
T. J. Pan ◽  
J. Chen ◽  
Y. X. He ◽  
W. Wei ◽  
J. Hu

AbstractThe oxidation behavior of grain-refined Cu–7.0 Cr alloy (GR Cu–7.0 Cr) in air at 973–1,073 K was investigated in comparison with normal casting Cu–7.0 Cr alloy (CA Cu–7.0 Cr). The oxidation of CA Cu–7.0 Cr alloy nearly followed parabolic law, while the oxidation kinetics of GR Cu–7.0 Cr slightly deviated from parabolic law. Both alloys almost produced multi-layered scales consisting of the outer layer of CuO and the inner layer of mixed Cr2O3 and Cu2O oxides plus internal oxidation zones of chromium. The grain-refined Cu–7.0 Cr alloy produced a more amount of Cr2O3 in the inner layer of the scale, and thus was oxidized at much lower oxidation rate than that of CA Cu–7.0 Cr with normal grain size. The experimental results indicated that the differences in oxidation behavior between two alloys may be ascribed to the different size and spatial distribution of the second-phase particles and the reactive component contents in localized zone.


2002 ◽  
Vol 721 ◽  
Author(s):  
A. Gungor ◽  
K. Barmak ◽  
A. D. Rollett ◽  
C. Cabral ◽  
J. M. E. Harper

AbstractAnnealing Cu and dilute Cu(Ti), Cu(Sn) and Cu(Al) alloy films resulted in the strengthening of film texture, with the strongest <111> fiber texture being found for Cu(Ti). Annealing also resulted in a decrease of electrical resistivity and the growth of grains, with the largest grain size and lowest resistivity being seen for pure Cu itself. Among the alloy films, the lowest resistivity was found for Cu(Ti) and the largest grain size for Cu(Al). Electron beam evaporated films with compositions in the range of 2.0-3.0 at% and thicknesses in the range of 420-540 nm were annealed at 400°C for 5 hours. Four point probe resistance measurement, xray diffraction and transmission electron microscopy were used to follow the changes in film resistivity, texture and grain size.


2007 ◽  
Vol 558-559 ◽  
pp. 23-31 ◽  
Author(s):  
Tadashi Maki

The formation of ultrafine-grained structure in steels by various thermomechanical processings is reviewed from a metallurgical point of view. In the recent new type TMCP, ultrafine ferrite grains with a grain size of about 1μm are obtained when the austenite is heavily deformed at lower temperatures. In this case, dynamic phenomena such as dynamic recrystallization become prominent in the process. In the aging after heavy cold rolling of supersaturated matrix phase in two-phase alloys, the competition between the recovery or recrystallization of matrix phase and the precipitation of second phase occurs, resulting in various types of two-phase structures including microduplex structure. Microduplex structure is also obtained by annealing after heavy cold rolling of coarse two-phase structure in duplex stainless steel and high carbon steel. Recently, various severe plastic deformation processings, in which very large plastic strain over 4 is applied to the materials, have been developed to produce ultrafine grained materials with nanocrystalline and/or submicrocrystalline structures.


1997 ◽  
Vol 12 (6) ◽  
pp. 1569-1575 ◽  
Author(s):  
Tze-Chiun Chen ◽  
Tingkai Li ◽  
Xubai Zhang ◽  
Seshu B. Desu

The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films having a perovskite-like layered structure was investigated for excess bismuth contents ranging from 0% to 100%. For the first time, a limited solid solution of SBT and Bi2O3 was shown to exist when the amount of excess Bi was less than 50%. The formation of a solid solution enhanced the grain size and a-b plane orientation of the films, resulting in substantial improvement in the ferroelectric hysteresis properties of the films. On the other hand, when the amount of excess Bi exceeded 50%, Bi2O3 appeared as a second phase which led to high leakage current and poor ferroelectric hysteresis curves. 30–50% excess Bi content was found to be the optimum composition with respect to grain size, crystallographic orientation, and single phase formation. Within this range, SBT films exhibit low leakage current density (˜10−9 A/cm2) and maximum remanent polarization (2Pr ˜12 µC/cm2).


1995 ◽  
Vol 400 ◽  
Author(s):  
Boqin Qiu ◽  
Yang-Tse Cheng ◽  
James P. Blanchard

AbstractWhile gas condensation and mechanical alloying have been used to produce nano-phase powders, an effective method of applying these powders as coatings is still lacking. Furthermore, fundamental studies of the mechanical properties of nano-phase powders may be complicated by the porosity associated with consolidation processes. Recently, we have made nano-crystalline composite thin films of Ag-Mo and Ag-Ni by depositing two immiscible elements simultaneous onto substrates. We found, using XRD and TEM, that the average grain size varies from 10 to 100 nm by choosing an appropriate substrate temperature. Nanoindentation measurements showed the hardness of the composite is increased four times by reducing the grain-size of both phases from 100 to 10 nm. The load vs. displacement curves were simulated using a finite element method (ABAQUS). A relationship between the hardness of the two-phase composite and the yield strength of each phase is obtained.


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