Compound Formation in Pd Metallized Strained Layers of Sige on Si

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Buxbaum ◽  
M. Eizenberg ◽  
A. Raizmann ◽  
F. Schaffler
Keyword(s):  
High Temperature ◽  
Layered Structure ◽  
Ternary Phase ◽  
Annealing Temperature ◽  
Layer Structure ◽  
Strain Relaxation ◽  
Compound Layer ◽  
Compound Formation ◽  
Strained Layers ◽  
Double Layer Structure

AbstractIn this paper we report on the formation of compounds following the interaction of Pd with strained epitaxial layers of Si1−xGex (x=0.18) MBE grown on Si( 100), in the temperature range of 200 to 650°C. Compositional and structural analyses show that the dominant compound formed was an hexagonal ternary phase, Pd2Si1−yGey where the value of y is lower than of x, and varies with the reaction temperature. In addition to the ternary phase, the binary phase PdGe was also detected. The hexagonal compound grew in a textured manner with its c-axis oriented along the [100] direction of the Si1−xGex film. High temperature anneals (T≥550°C) resulted in the formation of a double layered structure, with the silicide/germanide compound layer on the surface, and below it a Ge rich epitaxial Si1−xGex layer. Strain relaxation of the unreacted layer occurred for specimens in which the double layer structure appeared (annealing temperature ≥550°C). A mechanism for the formation of the double layered structure is proposed.

Real Time X-Ray Studies of Interface Kinetics in Epitaxial Strained Layers

1991 ◽  
Vol 230 ◽  
Author(s):  
Roy Clarke ◽  
Waldemar Dos Passos ◽  
Walter Lowe ◽  
Brian Rodricks ◽  
Cristine Brizard
Keyword(s):  
Lattice Strain ◽  
Layer Structure ◽  
Strain Relaxation ◽  
Ray Method ◽  
Strained Layers ◽  
Time Resolved ◽  
X Ray ◽  
Interface Kinetics ◽  
Kinetics Of ◽  
Radiation Measurements

AbstractA new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron radiation measurements of the strain relaxation during rapid thermal annealing (RTA) show that the lattice strain of an as-grown strained layer structure GaAs-Inx.Ga1−x-As-GaAs/GaAs is relieved cooperatively by a series of sluggish discontinuous transitions. We find that ion implantation enhances the annealing kinetics of InAlAs strained layers.

High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

2000 ◽  
Vol 15 (11) ◽  
pp. 2284-2287 ◽  
Author(s):  
Byung-Teak Lee ◽  
Yang-Soo Shin ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Layer Structure ◽  
Compound Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Double Layer Structure ◽  
Transmission Electron ◽  
Al Thin Film

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Very Thick Coherently Strained GexSi1−x Layers Grown in a Narrow Temperature Window

1991 ◽  
Vol 220 ◽  
Author(s):  
C. H. Chern ◽  
K. L. Wang ◽  
G. Bai ◽  
M. -A. Nicolet
Keyword(s):  
Growth Temperature ◽  
Strain Relaxation ◽  
Gas Pressure ◽  
High Density ◽  
Misfit Dislocations ◽  
High Quality ◽  
Strained Layers ◽  
Temperature Window ◽  
Residual Gas

ABSTRACTStrain relaxation of GexSi1−x layers is studied as a function of growth temperature. Extremely thick coherently strained layers whose thicknesses exceed more than fifty times of the critical thicknesses predicted by Matthews and Blakeslee's model were successfully grown by MBE. There exits a narrow temperature window from 310 °C to 350 °C for growing this kind of high quality thick strained layers. Below this temperature window, the layers are poor in quality as indicated from RHEED patterns. Above this window, the strain of the layers relaxes very fast accompanied with a high density of misfit dislocations as the growth temperature increases. Moreover, for samples grown in this temperature window, the strain relaxation shows a dependence of the residual gas pressure, which has never been reported before.

Influence of Mg on Resistivity, Adhesion, Agglomeration of Ag(Mg)/SiO2/Si Multilayers

2001 ◽  
Vol 686 ◽  
Author(s):  
Bongjoo Kang ◽  
Heejung Yang ◽  
Sungjin Hong ◽  
Yeonkyu Ko ◽  
Chang-Oh Jeong ◽  
...  
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Enhanced Resistance ◽  
Free Silicon ◽  
Mg Content ◽  
Mgo Layers

AbstractThe effect of Mg in Ag(Mg)/SiO2/Si multilayers on adhesion, agglomeration, and resistivity after annealing in vacuum at 200 to 500 have been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in MgO/Ag(Mg)/MgO/SiO2/Si structure. The presence of surface MgO provided the passivation against air, thus leading to the significantly enhanced resistance to agglomeration. In addition, the resistivity of Ag(Mg) film decreased by lowering Mg content and increasing the annealing temperature as well. Furthermore, Ag adhesion to SiO2 was improved due to the formation of the interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. Also, the negligible solubility of Si in Ag prevented the dissolution of free silicon produced from the reaction, Mg + SiO2 = MgO + Si, which was in contrast with the dissolution of a significant amount of silicon released from the SiO2 substrate in Cu(Mg)/SiO2/Si multilayers after annealing at high temperature, e.g., 400. The dissolved Si in Cu caused the rapid increase in resistivity in Cu(Mg)/SiO2/Si.

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

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