Cleaning Procedures for UHV Cluster-tool MOS Fabrication

1992 ◽  
Vol 259 ◽  
Author(s):  
C J Sofield ◽  
M P Murrell ◽  
S Sugden ◽  
M Heyns ◽  
S Verhaverbeke ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Performance ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Medium Energy Ion Scattering ◽  
Physical And Chemical ◽  
Cluster Tool

ABSTRACTWe have investigated the effect on a silicon surface of both wet chemical and cluster-tool UV/ozone cleaning, prior to UHV processing to fabricate MOS test structures. The physical and chemical condition of the Si surface has been examined by Scanning Tunnelling and Atomic Force Microscopy (STM, AFM) and Medium Energy Ion Scattering (MEIS). After MOS fabrication some of the structures were examined by Cross-sectional Transmission Electron Microscopy (TEM). The electrical performance of the MOS test sets were characterized by breakdown voltage measurements.We have found correlations between the electrical performance of the MOS devices, the structure of the Si surface prior to oxidation, and the details of the UHV fabrication technique. In particular any MOS device fabricated on a Si surface thermally cleaned in UHV prior to oxidation has a poor breakdown strength. We have found that this is the result of the formation of silicon carbide on the Si surface at high temperature and the subsequent local disruption of the oxidation step of MOS fabrication by the SiC. A UHV cleaning procedure has been developed to avoid this C contamination problem.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Interface structure and formation between gold and trimethylcyclohexane polycarbonate

1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Cluster Formation ◽  
Systematic Investigation ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Metal Diffusion ◽  
Atomic Force ◽  
Transmission Electron

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.

Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

1995 ◽  
Vol 399 ◽  
Author(s):  
H. Lafontaine ◽  
D.C. Houghton ◽  
B. Bahierathan ◽  
D.D. Perovic ◽  
J.-M. Baribeau
Keyword(s):  
Electron Microscopy ◽  
Surface Waves ◽  
Critical Thickness ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTSeveral Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

scholarly journals Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited onc-Plane Sapphire

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Contact Stiffness ◽  
Maximum Load ◽  
Cross Sectional ◽  
Continuous Contact ◽  
Force Microscopy ◽  
Atomic Force ◽  
Slip Bands ◽  
Transmission Electron ◽  
Deformation Behaviors

The mechanical properties and deformation behaviors of AlN thin films deposited onc-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the “pop-ins” phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young’s modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

1994 ◽  
Vol 339 ◽  
Author(s):  
Mark A. Stan ◽  
Martin O. Patton ◽  
Hemasiri K. M. Vithana ◽  
David L. Johnson ◽  
Joseph D. Warner ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Average Diameter ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Columnar Grains ◽  
20 Nm ◽  
Heater Plate

ABSTRACTSilicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

Indentation of AlN/CrN Multilayers from Room Temperature to 400 °C

2005 ◽  
Vol 492-493 ◽  
pp. 335-340 ◽  
Author(s):  
F. Giuliani ◽  
A. Goruppa ◽  
S.J. Lloyd ◽  
Dennis Teer ◽  
W.J. Clegg
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Deformation Behaviour ◽  
Dislocation Motion ◽  
Effect Of Temperature ◽  
Columnar Microstructure ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Observations elsewhere have shown that multilayer structures with layers ~10 nm thick can be harder than monolithic ones. Here we see whether these effects can be observed at high temperatures and investigate the effect of temperature on the manner of deformation. The hardness of an AlN/CrN multilayer structure with a range of wavelengths from 6-200 nm has been measured at temperatures from room temperature to 400 oC. The changes in hardness have been related to the deformation behaviour observed by cross-sectional transmission electron microscopy and atomic force microscopy. These observations suggest that the mechanical properties of the coatings are dominated by the refinement in the columnar microstructure rather than directly by an effect of the layer interfaces on dislocation motion.

MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 565-570 ◽  
Author(s):  
CHANGWU HU ◽  
DAVID J. SMITH ◽  
R. B. DOAK ◽  
I. S. T. TSONG
Keyword(s):  
Electron Microscopy ◽  
Substrate Surface ◽  
Supersonic Jet ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Cross Sectional ◽  
Growth Ratio ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

The growth of GaN buffer layers of thickness 10–25 nm directly on 6H–SiC (0001) substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3 flux came from a seeded beam supersonic jet source. By monitoring the growth in situ and by suitably adjusting the Ga/NH 3 flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the 6H–SiC (0001) substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

2020 ◽  
Vol 1004 ◽  
pp. 421-426
Author(s):  
Hideki Sako ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
Toshiyuki Isshiki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

scholarly journals Oxidation of Silicon Implanted with High-Dose Aluminum

1994 ◽  
Vol 354 ◽  
Author(s):  
Zunde Yang ◽  
Honghua Du ◽  
Stephen P. Withrow
Keyword(s):  
Oxidation Rate ◽  
Surface Region ◽  
High Dose ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Doses

AbstractSi (100) wafers were implanted with Al at 500°C to high doses at multi-energies and were oxidized in 1 atm flowing oxygen at 1000°–1200°C. The morphology, structure, and oxidation behavior of the implanted and oxidized Si were studied using optical microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy in conjunction with selected area electron diffraction and energy dispersive x-ray analysis. Large Al precipitates were formed and embedded near the surface region of the implanted Si. The oxidation rate of the Al-implanted Si wafers was lower than that of virgin Si. The unique morphology of the implanted Si results from rapid Al diffusion and segregation promoted by hot implantation. The reduction of the oxidation rate of Si by Al implantation is attributed to the preferential oxidation of Al and formation of a continuous difiusion barrier of Al2O3.

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