SiGe Heterojunctions Transistors and Optoelectronic Devices

ABSTRACTSiGe alloys have been successfully applied to a number of semiconductor devices, including bipolar heterojunction transistors, field effect transistors (FET's), and optoelectronic devices and structures. This review paper will first summarize the results obtained to-date in bipolar transistors, highlighting the design flexibility and the trade-offs offered by SiGe heterojunction technology and bandgap engineering, like junction field/capacitance control, liquid nitrogen operation and complementary processes. The leverage of this technology in high speed circuits will be discussed, including the record 75 GHz fr and 60 GHz fmax heterojunction bipolar transistors, the achievement of sub-25 ps ECL ring oscillator delay, and the doubling of the mobility in p-MODFETs. The applications of this technology to optoelectronic devices, including detectors and waveguides, will also be reviewed, to extend the use of silicon technology to long wavelength communication technology and infrared imaging.

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SiGe Heterojunction Bipolar Transistors

MRS Proceedings ◽

10.1557/proc-220-421 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 6

Author(s):

Maurizio Arienzo ◽

James H. Comfort ◽

Emmanuel F. Crabbé ◽

David L. Marame ◽

Subramanian S. Iyer ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Speed ◽

High Performance ◽

High Vacuum ◽

Chemical Vapor ◽

Layer Growth ◽

Bipolar Transistors ◽

Ultra High Vacuum ◽

Ring Oscillator ◽

Trade Offs

ABSTRACTStrained layer growth of SiGe on Si by either Molecular Beam Epitaxy (MBE) or various methods of Chemical Vapor Deposition (CVD), including Limited Reaction Processing (LRP) and Ultra High Vacuum CVD (UHV/CVD) have been used to realize narrow bandgap base double heterojunction bipolar transistors (HBTs). This review paper will focus on the fabrication of high performance transistors, and on the material and process challenges facing the implementation of SiGe HBT technology. In particular, the use of SiGe alloys for bandgap engineering of bipolar devices and the development of self-aligned, epitaxial base bipolar device structures will be discussed, including the most recent accomplishment of 75 GHz ƒr heterojunction bipolar transistors, and the record sub-25 ps EC L ring oscillator delay. The design flexibility and trade-offs offered by SiGe heterojunction technology, like junction field/capacitance control, liquid nitrogen operation and complementary processes, arc also reviewed, to assess the leverage of a SiGe base bipolar technology in high speed circuits.

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PRESENT STATUS AND FUTURE PROSPECTS OF HIGH-SPEED LIGHTWAVE ICS BASED ON INP

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156498000245 ◽

1998 ◽

Vol 09 (02) ◽

pp. 567-593 ◽

Cited By ~ 2

Author(s):

EIICHI SANO ◽

KAZUO HAGIMOTO ◽

YASUNOBU ISHII

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Field Effect Transistors ◽

Light Wave ◽

Bipolar Transistors ◽

Current Status ◽

Figures Of Merit ◽

Heterostructure Field Effect Transistors ◽

The Relationship

High-speed integrated circuits (ICs) are essential for expanding the capacity of light-wave communications. InP-based heterostructure field effect transistors (HFETs) and heterojunction bipolar transistors (HBTs) are very promising for producing high-speed digital and analog ICs. This paper reviews the current status of InP-based lightwave communication ICs in terms of device, circuit, and packaging technologies. A successful 40-Gbit/s, 300-km optical fiber transmission using InP HFET ICs demonstrates the feasibility of the ICs. Furthermore, we estimate future IC performance based on the relationship between electron device figures-of-merit and IC speed. To keep up with the performance trend, technological problems, like inter- and intra-chip interconnections, have to be solved.

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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