Interfacial Reactions of Co and Si/Co Films on GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
J. S. Kwak ◽  
H. K. Baik ◽  
J. I. Lee ◽  
S. K. Noh ◽  
D. W. Shin ◽  
...  
Keyword(s):  
Ternary Phase ◽  
Gaas Layer ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
Subsequent Reaction ◽  
Cross Sectional ◽  
Quaternary Phase ◽  
Transmission Electron ◽  
Layer Structures ◽  
Higher Temperature

ABSTRACTInterfacial reactions of Co and Si/Co films on GaAs have been investigated using X-ray diffraction(XRD), Auger electron spectroscopy(AES), cross-sectional transmission electron microscopy(XTEM), microdiffraction, and energy dispersive spectroscopy(EDS). Cobalt starts to react with GaAs at 380°C by formation of ternary phase, most probably Co2GaAs. At 420°C, CoGa nucleates at the Co and Co2GaAs interface and grows with Co2GaAs. At higher temperature, Co2GaAs disappears and CoGa/GaAs layer structures are formed. Annealing of the layer-deposited Si/Co films at 380°C results in the formation of Co2GaAs. At 420°C, the entire layer of Co is consumed, while Co2Si transforms to CoSi, and binary phases, CoGa and CoAs, are formed on top of the ternary phase beneath the CoSi layer. In the subsequent reaction, CoSi grows at the expense of the decompositions of CoGa and CoAs at 460°C. At 600°C, ternary phase is decomposed, and CoSi forms interface with GaAs. This finding can be understood from the calculated Si-Co-Ga-As quaternary phase diagram.

Growth and Characterizations of Gaas on Inp with Different Buffer Structures by Molecular Beam Epitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Xiaoming Liu ◽  
Henry P. Lee ◽  
Shyh Wang ◽  
Thomas George ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Layer ◽  
Optical Quality ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Layer Structures ◽  
Gaas Films ◽  
Initial Deposition ◽  
Strained Layer Superlattices

ABSTRACTWe report the growth and characterizations of 31μm thick GaAs films grown on (100) InP substrates by MBE employing different buffer layer structures during the initial deposition. The buffer layer structures under study are: 1) GaAs layer grown at low temperature; 2) GaAs layer grown at low temperature plus two sets of In0.08Ga0.92As/GaAs strained layer superlattices (SLS) and 3) a transitional compositionally graded InxGal-xAs layer between the InP substrate and the GaAs film. After the buffer layer deposition, the growth was continued by conventionalMBE to a total thickness of 3μm for all samples. From the 77K photoluminescence (PL) measurement, it was found that the sample with SLS layers has the highest PL intensity and the narrowest PL linewidth. Cross-sectional transmission electron microscopy (TEM) studies showed that the SLS is effective in reducing the propagation of threading dislocations and explains the observed superior optical quality from the PL measurement.

scholarly journals Effect of Multiple Reflows on the Interfacial Reactions and Mechanical Properties of an Sn-0.5Cu-Al(Si) Solder and a Cu Substrate

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2367
Author(s):  
Junhyuk Son ◽  
Dong-Yurl Yu ◽  
Yun-Chan Kim ◽  
Shin-Il Kim ◽  
Min-Su Kim ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
High Heat ◽  
Interfacial Reactions ◽  
Future Application ◽  
Scanning Calorimetry ◽  
Cross Sectional ◽  
Automotive Electronic ◽  
Transmission Electron ◽  
Si Content ◽  
Lead Free Solders

In this study, the interfacial reactions and mechanical properties of solder joints after multiple reflows were observed to evaluate the applicability of the developed materials for high-temperature soldering for automotive electronic components. The microstructural changes and mechanical properties of Sn-Cu solders regarding Al(Si) addition and the number of reflows were investigated to determine their reliability under high heat and strong vibrations. Using differential scanning calorimetry, the melting points were measured to be approximately 227, 230, and 231 °C for the SC07 solder, SC-0.01Al(Si), and SC-0.03Al(Si), respectively. The cross-sectional analysis results showed that the total intermetallic compounds (IMCs) of the SC-0.03Al(Si) solder grew the least after the as-reflow, as well as after 10 reflows. Electron probe microanalysis and transmission electron microscopy revealed that the Al-Cu and Cu-Al-Sn IMCs were present inside the solders, and their amounts increased with increasing Al(Si) content. In addition, the Cu6Sn5 IMCs inside the solder became more finely distributed with increasing Al(Si) content. The Sn-0.5Cu-0.03Al(Si) solder exhibited the highest shear strength at the beginning and after 10 reflows, and ductile fracturing was observed in all three solders. This study will facilitate the future application of lead-free solders, such as an Sn-Cu-Al(Si) solder, in automotive electrical components.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

Characterization of Er/O-doped Si-LEDs with Low Thermal Quenching

2005 ◽  
Vol 866 ◽  
Author(s):  
A. Karim ◽  
W.-X. Ni ◽  
A. Elfving ◽  
P.O.Å. Persson ◽  
G.V. Hansson
Keyword(s):  
Temperature Dependence ◽  
Reverse Bias ◽  
Thermal Quenching ◽  
Constant Current ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Low Energy Electrons ◽  
Higher Temperature ◽  
Electron Emitters

AbstractElectroluminescence studies of MBE-grown Er/O-doped Si-diodes at reverse bias have been done. For some devices there is much reduced thermal quenching of the emission at 1.54 νm. There are examples where the temperature dependence is abnormal in that the intensity for a constant current even increases with temperature up to e.g. 80 °C. These devices have been studied with cross-sectional transmission electron microscopy to see the microstructure of the Er/O-doped layers as well as the B-doped SiGe-layers that are used as electron emitters during reverse bias. Although there are defects in the layers there is no evidence for large thick precipitates of SiO2. While reduced thermal quenching often is attributed to having the Er-ions within SiO2 layers, this is not the case for our structures as evidenced by our TEM-studies. The origin of the abnormal temperature dependence is attributed to the two mechanisms of breakdown in the reverse-biased diodes. At low temperature the breakdown current is mainly due to avalanche resulting in low-energy electrons and holes that quenches the intensity by Auger deexcitation of the Er-ions. At higher temperature the breakdown current is mainly phonon-assisted tunneling which results in a more efficient pumping with less de-excitation of the Er-ions. Finally at the highest temperatures the thermal quenching sets in corresponding to an activation energy of 125 meV, which is slightly lower than 150 meV that has been reported in other studies.

The Characterization Of Chemical Bath Deposited Cds On Single Crystal InP Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
G. M. Riker ◽  
M. M. Al-Jassim ◽  
F. S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Surface Cleaning ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Fine Grained ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Inp Substrates

AbstractWe have investigated CdS thin films as possible passivating window layers for InP. The films were deposited on single crystal InP by chemical bath deposition (CBD). The film thickness, as optically determined by ellipsometry, was varied from 500 to 840Å. The film morphology was investigated by high resolution scanning electron microscopy (SEM), whereas the film microstructure was studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Most of the films were fine-grained polycrystalline CdS, with some deposition conditions resulting in epitaxial growth. Cross-sectional TEM examination revealed the presence of interface contaminants. The effect of such contaminants on the film morphology and microstructure was studied, and various approaches for InP surface cleaning/treatment were investigated. The epitaxial films were determined to be hexagonal on both the (111) and (100) InP substrates; however, they were heavily faulted.

Effect of Aging Treatment on Damping Capacity in Mncunife Alloy

2012 ◽  
Vol 246-247 ◽  
pp. 1158-1162
Author(s):  
Xu Fu ◽  
Ning Li ◽  
Yu Hua Wen ◽  
Jing Teng ◽  
Ying Zhang
Keyword(s):  
Electron Microscope ◽  
Aging Treatment ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
The Relationship

M2052 alloys with various aging treatments are obtained in order to investigate the relationship between aging treatment and damping capacity by the torsion pendulum, X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) methods. The results show that M2052 can obtain high damping capacity (δ>0.2) when aged at a range from 400°C to 450°C, and the damping capacity after aged at a lower temperature is higher than that aged at a higher temperature for the maximum values. TEM and XRD results show that fcc-fct transformation occurs after aging treatment. The volumes of fct structures are one of reason to affect the damping capacity in M2052 alloy. The better understanding aging treatment could promote the applications of M2052 alloy.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Clay minerals in hydrothermally altered basalts from Middle Atlas, Morocco

Clay Minerals ◽  
2005 ◽  
Vol 40 (1) ◽  
pp. 67-77 ◽  
Author(s):  
A. Dekayir ◽  
M. Amouric ◽  
J. Olives
Keyword(s):  
Electron Microscopy ◽  
Clay Minerals ◽  
Crystallization Process ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
Equilibrium Conditions ◽  
Transmission Electron ◽  
Middle Atlas ◽  
Higher Temperature ◽  
Main Components

AbstractClay minerals occur as replacements of olivine, pyroxenes, plagioclase and interstitial materials, and as vesicle fillings, in altered basalts from the Middle Atlas (Morocco). Phyllosilicates are the main components of this alteration process. They have been characterized here by optical microscopy, X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy as saponite, talc, corrensite and chlorite. The homogeneity of the chemical compositions of these phyllosilicates, in different alteration environments, probably means that they are controlled by the composition of the hydrothermal fluid. Talc-saponite-corrensite (with dominant saponite) is the clay mineral association most frequently observed (corrensite being more abundant in the vesicular levels of the basalts). Such an association, with no evidence of albite and zeolite, suggests that these basalts have suffered minimal alteration at relatively low temperatures. Another association, chlorite-corrensite, was detected in a deeper (vesicular) sample, probably resulting from a slightly higher temperature. Lastly, only discrete phyllosilicates (i.e. no random mixed-layer minerals) were observed. This suggests that near-equilibrium conditions prevailed during this alteration stage and that a dissolution-crystallization process was the main mechanism of transformation.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

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