Multilayer Lead Zirconate Titanate and Barium Titanate Ferroelectric Capacitors

1996 ◽  
Vol 433 ◽  
Author(s):  
L.H. Chang ◽  
W.A. Anderson
Keyword(s):  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Multilayer Structure ◽  
Layer Structure ◽  
Perovskite Phase ◽  
Processing Condition ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Lead Zirconate ◽  
Effective Dielectric Constant

AbstractFerroelectric PbZrxT1−xO3 (PZT) thin films have been deposited on Pt coated Si substrates by if magnetron sputtering. The optimized processing condition to obtain proper stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties was demonstrated using a PZT target with Pb(Zr+Ti) ratio of 1.2 and depositing at 350°C, followed by thermal treatment at 620°C for 30 min. The structural and electrical properties of the PZT layer were further improved by fabricating a novel multilayer structure which combined the PZT with the nanolayer BaTiO3. The leakage current density was reduced from 2×10−7 A/cm2 for the single layer structure to 2×10−9 A/cm2 for the multilayer structure at a field of 4×105 V/cm, while maintaining a high relative effective dielectric constant of 442. The relative dielectric constant of the PZT film in the multilayer structure was calculated to be about 880.

Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3436-3441 ◽  
Author(s):  
Tae Song Kim ◽  
Dong Joo Kim ◽  
Jeon Kook Leea ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Lead Zirconate ◽  
Hysteresis Curve ◽  
Grown Film

Well-crystallized Pb(Zr0.52Ti0.48)O3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO2/Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization (Pr) and coercive field (Ec) of as-grown film were 8–30 μC/cm2 and 24–64 kV/cm with the variation of applied voltage (5–15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse (Vp-p = 10 V) up to 1011 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film.

Improvement of Figure of Merit Pb(Zr,Ti)O3–Pb(Zn,Ni,Nb)O3–Pb(In,Nb)O3 Piezoelectric Ceramics

2021 ◽  
Vol 21 (3) ◽  
pp. 1978-1983
Author(s):  
Bo Su Kim ◽  
Jae-Hoon Ji ◽  
Masao Kamiko ◽  
Seong Jin Kim ◽  
Jung-Hyuk Koh
Keyword(s):  
Dielectric Constant ◽  
Energy Harvesting ◽  
Lead Zirconate Titanate ◽  
Figure Of Merit ◽  
Energy Harvester ◽  
Relative Dielectric Constant ◽  
Lead Zirconate ◽  
Electric Voltage ◽  
Piezoelectric Energy ◽  
Piezoelectric Charge

Figure of merit the product of piezoelectric charge constant and the piezoelectric voltage constant—d33 × g33 in piezoelectric energy harvesting systems are critical measures in energy harvester applications. It is difficult to achieve high figure of merit because of the interdependence of d33 and the relative dielectric constant, εr. Until now, the prohibitive amount of effort required to solve this problem has led to it being considered an unsolvable issue. Lead zirconate titanate ceramic, Pb(Zr,Ti)O3, has been reported to exhibit high values of d33 and εr. However, to be employed as piezoelectric energy harvester, a candidate material is required to exhibit both high piezoelectric charge coefficient and high piezoelectric electric voltage coefficient simultaneously. To enhance the figure of merit of Pb(Zr,Ti)O3-based materials, dopants have also been considered. Pb(Zn,Ni,Nb)O3- added Pb(Zr,Ti)O3, Pb(Zr,Ti)O3–Pb(Zn,Ni,Nb)O3 ceramic has been reported to exhibit a high d33 value of 561 pC/N. It's dielectric constant has also been reported to be low at 1898. In this study, Pb(Zr,Ti)O3–Pb(Zn,Ni,Nb)O3–Pb(In,Nb)O3 was investigated in the context of enhancing the figure of merit of Pb(Zr,Ti)O3-based materials. During the proposed process, we increased the corresponding figure of merit by adding Pb(In,Nb)O3 material. Besides exhibiting a low dielectric constant, the Pb(In,Nb)O3 material was also observed to exhibit high d33 × g33 as the proposed doping increased the value of d33 greatly, while maintaining the dielectric constant (Yan, J., et al., 2019. Large engancement of trans coefficient in PZT-PZN energy harvesting system through introducing low εrPIN relaxor. Journal of the European Ceramic Society, 39, pp.2666–2672). Further, we conducted an optimization experiment by controlling the doping concentration and the sintering temperature.

Preparation and Dielectric Properties of 1-3 La Modified PZT/IPN Piezoelectric Composites

2010 ◽  
Vol 105-106 ◽  
pp. 355-358 ◽  
Author(s):  
Z.L. Zhu ◽  
Dong Yan Tang ◽  
X.H. Zhang ◽  
Y.J. Qiao
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Lead Zirconate Titanate ◽  
Polymer Network ◽  
Lead Zirconate ◽  
Interpenetrating Polymer Network ◽  
Ceramic Fibers ◽  
Piezoelectric Composites

To prevent the potential cracking of gel fibers, La modified lead zirconate titanate (PLZT) ceramic fibers with diameter within 50µm were achieved by embedding into PLZT powders during the heat treatment. Then the 1-3 PLZT fiber/interpenetrating polymer network (IPN) piezoelectric composites were prepared by casting the IPN precursors onto the well aligned ceramic fibers. The influences of the heating temperatures and La amounts on the dielectric constant, dielectric loss with frequencies and piezoelectric constant of PLZT were investigated in detail. The morphologies of fibers and composites were observed by biological microscope. And also, the dielectric constant of PLZT fibers and PLZT fiber/IPN piezoelectric composites were detected.

scholarly journals F-centers mechanism of long-term relaxation in lead zirconate-titanate based piezoelectric ceramics. 2. After-field relaxation

2016 ◽  
Vol 06 (03) ◽  
pp. 1650019 ◽  
Author(s):  
V. M. Ishchuk ◽  
D. V. Kuzenko
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Relaxation Processes ◽  
Logarithmic Function ◽  
External Effects ◽  
Dc Electric Field

The paper presents results of experimental study of the dielectric constant relaxation during aging process in Pb(Zr,Ti)O3based solid solutions (PZT) after action of external DC electric field. The said process is a long-term one and is described by the logarithmic function of time. Reversible and nonreversible relaxation process takes place depending on the field intensity. The relaxation rate depends on the field strength also, and the said dependence has nonlinear and nonmonotonic form, if external field leads to domain disordering. The oxygen vacancies-based model for description of the long-term relaxation processes is suggested. The model takes into account the oxygen vacancies on the sample's surface ends, their conversion into [Formula: see text]- and [Formula: see text]-centers under external effects and subsequent relaxation of these centers into the simple oxygen vacancies after the action termination. [Formula: see text]-centers formation leads to the violation of the original sample's electroneutrality, and generate intrinsic DC electric field into the sample. Relaxation of [Formula: see text]-centers is accompanied by the reduction of the electric field, induced by them, and relaxation of the dielectric constant, as consequent effect.

scholarly journals Hydrothermal synthesis and characteristics of lanthanumdoped pb(Zr₀.₆₅Ti ₀.₃₅)O₃ ceramics

2021 ◽  
Vol 8 (3) ◽  
pp. 14-19
Author(s):  
Thuy Nguyen Thanh ◽  
Tung Nguyen Van ◽  
Hung Nguyen Trong ◽  
Minh Cao Duy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Reaction Temperature ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Influence Of Ph ◽  
Scanning Electron

Lanthanum-doped lead zirconate titanate (PLZT) powders were synthesized using thehydrothermal method. The influence of pH, reaction temperature and time, lanthanum concentration on the formation and characteristics of PLZT were investigated. Obtained powders were investigated using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) techniques and a dielectric analyzer. The results showed that           Pb1-xLax(Zr0.65Ti0.35)O3 with x= 0.0 – 0.1 were well formed under conditions: pH≥13, reaction time of 12hrs, reaction temperature of 180oC. Dielectric constant of PLZT is higher than PZT. The grain size of the PLZT is found to be 1–3.5 µm.

scholarly journals Effect of Ni/Nb on structure, electrical and ferroelectric properties of 0.5PNN-0.5PZT ceramics

2015 ◽  
Vol 9 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Rashmi Gupta ◽  
Seema Verma ◽  
Deepa Singh ◽  
Karan Singh ◽  
Krishen Bamzai
Keyword(s):  
Grain Size ◽  
Dielectric Relaxation ◽  
Lead Zirconate Titanate ◽  
Remnant Polarization ◽  
Inverse Relationship ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Cole Plot ◽  
Conventional Solid State Reaction

The solid solutions of lead nickel niobate (PNN) and lead zirconate titanate (PZT), with general formula 0.5 Pb(NixNb1-x)O3-0.5 PZT, where x = 1/3, 1/2 and 2/3 and Zr/Ti = 50/50, were prepared by conventional solid state reaction technique. The perovskite phase formation and morphology were examined by powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. From microstructure investigations, the grain size was found to lie in the range of 0.2-1.1 ?m. Diffuse phase transition and dielectric relaxation was obtained for all three compositions. The nature of dielectric relaxation was investigated through complex plane Argand plot or Cole-Cole plot. It was found that both grains as well as grain boundary contribute to dielectric relaxation. A direct correlation between the grain size and electrical properties was obtained. The remnant polarization and grain size were found to follow the inverse relationship. The inverse relationship between remnant polarization and grain size was established.

scholarly journals Preparation, Structural, Electrical, and Ferroelectric Properties of Lead Niobate–Lead Zirconate–Lead Titanate Ternary System

2015 ◽  
Vol 2015 ◽  
pp. 1-12 ◽  
Author(s):  
Rashmi Gupta ◽  
Seema Verma ◽  
Vishal Singh ◽  
K. K. Bamzai
Keyword(s):  
Dielectric Constant ◽  
Ternary System ◽  
Lead Titanate ◽  
Ac Conductivity ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Ternary Systems ◽  
Lead Zirconate ◽  
X Ray ◽  
Dispersive Nature

A ternary system of lead niobate–lead zirconate–lead titanate with composition xPN–yPZ–(x-y)PT where x=0.5 and y=0.15, 0.25, and 0.35 known as PNZT has been prepared by conventional mixed oxide route at a temperature of 1100°C. The formation of the perovskite phase was established by X-ray diffraction analysis. The surface morphology studied by scanning electron microscopy shows the formation of fairly dense grains and elemental composition was confirmed by energy dispersive X-ray analysis. Dielectric properties like dielectric constant and dielectric loss (ε′ and tan⁡δ) indicate poly-dispersive nature of the material. The temperature dependent dielectric constant (ε′) curve indicates relaxor behaviour with two dielectric anomalies. The poly-dispersive nature of the material was analysed by Cole-Cole plots. The activation energy follows the Arrhenius law and is found to decrease with increasing frequency for each composition. The frequency dependence of ac conductivity follows the universal power law. The ac conductivity analysis suggests that hopping of charge carriers among the localized sites is responsible for electrical conduction. The ferroelectric studies reveal that these ternary systems are soft ferroelectric.

Pb(Zr0.52Ti0.48)O3 Ceramics Synthesized Using Planetary Ball Mill

2012 ◽  
Vol 620 ◽  
pp. 486-490
Author(s):  
Shafiza Afzan Sharif ◽  
Julie Juliewatty Mohamed ◽  
W.A.W. Yusoff
Keyword(s):  
Lead Zirconate Titanate ◽  
Ball Mill ◽  
Single Phase ◽  
Perovskite Phase ◽  
Xrd Analysis ◽  
Lead Zirconate ◽  
Planetary Ball Mill ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Pzt Ceramics

Lead zirconate titanate Pb (Zr0.52Ti0.48)O3, (PZT) ceramic was successfully prepared from the mixture of commercial PbO, TiO2and ZrO2powders using planetary ball mill at room temperature. The phase formation and microstructure of the milled powders were characterized using X-ray diffraction (XRD) and Scanning Electron Microscope (SEM). XRD results indicated that the perovskite phase of PZT was formed from the mixture of starting materials after milling for 40 h. The grain sizes of the powders have been estimated from the SEM images to be ~200 nm. The compacted PZT samples were then sintered at 950 °C for 1 h. The samples were characterized by XRD and SEM, meanwhile the density was measured by Archimedes principle. XRD analysis on the sintered samples revealed the formation of single phase Pb (Zr0.52Ti0.48)O3ceramics while the SEM images estimated the grain size to be ~2 µm. The relative density of the obtained sintered PZT ceramics was measured to be approximately 99.93 % of the theoretical density. The results hence indicate that planetary ball mill is an effective preparatory technique to improve the sinterability of PZT ceramics.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Static and Dynamic Techniques for Residual Stress Measurements in Microelectromechanical Systems

2006 ◽  
Author(s):  
Mary Vechery ◽  
Andrew Dick ◽  
Luke Currano ◽  
Madan Dubey ◽  
B. Balachandran
Keyword(s):  
Residual Stress ◽  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Measurement Techniques ◽  
Single Layer ◽  
Lead Zirconate ◽  
Nonlinear Frequency ◽  
Stress Measurements ◽  
Stress Levels ◽  
Dynamic Techniques

A major concern in the development of microelectromechanical systems (MEMS) is the presence of residual stress. Residual stress, which is produced during the fabrication of multi-layer thin-film structures, can significantly affect the performance of microscale devices. Though experimental measurement techniques are accurate, actual stress measurements can vary dramatically from run to run and wafer to wafer. For this reason, modeling of this stress is a challenging task. Past work has focused on experimental, static techniques for determining residual stress levels in single-layer and bi-layer structures. In this effort, two different experimental techniques are used for determining residual stress levels in four-layer piezoelectrically driven cantilever and clamped-clamped structures. One of the techniques is based on wafer bow measurements, and the other technique is a dynamic technique that is based on parameter identification from nonlinear frequency-response data. The devices studied, which consist of a piezoelectric layer or lead zirconate titanate (PZT) layer, are fabricated with varying lengths, widths, and material layer thickness. The results obtained from the static and dynamic techniques are compared and discussed.

Sign in / Sign up

Export Citation Format

Share Document