Comparison Of Aln Films Synthesized By Pulsed Laser Ablation And Magnetron Sputtering Techniques

1997 ◽  
Vol 505 ◽  
Author(s):  
K. Jagannadham ◽  
A. K. Sharma ◽  
Q. Wei ◽  
R. Kalyanraman ◽  
J. Narayan
Keyword(s):  
Magnetron Sputtering ◽  
Secondary Ion Mass Spectrometry ◽  
Pulsed Laser ◽  
Wear Test ◽  
Laser Deposition ◽  
Grinding Method ◽  
Transmission Electron ◽  
Infra Red ◽  
Bonding Characteristics ◽  
Secondary Ion

ABSTRACTA comparative study is reported on the aluminum nitride (AIN) films on Si (111) substrate deposited by pulsed laser deposition and reactive magnetron sputtering. The structure, bonding characteristics, relative impurity levels, and wear resistance have been investigated to compare these films. We have used the techniques such as high resolution transmission electron microscopy, Raman spectroscopy, fourier transform infra-red spectroscopy, secondary ion mass spectrometry, and crater grinding method for wear test, to delineate differences between these AIN films.

Zn-Vacancy Related Defects Identified in ZnO Films Grown by Pulsed Laser Deposition

2017 ◽  
Vol 373 ◽  
pp. 227-230
Author(s):  
Francis Chi Chung Ling ◽  
Zi Lan Wang ◽  
Cai Qin Luo ◽  
Wolfgang Anwand ◽  
Andreas Wagner
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Positron Annihilation Spectroscopy ◽  
Laser Deposition ◽  
Zno Films ◽  
Near Band Edge ◽  
Transmission Electron ◽  
Related Defect ◽  
Doped Zno ◽  
Secondary Ion

Undoped and Cu-doped ZnO grown on sapphire using pulsed laser deposition (PLD) were studied by positron annihilation spectroscopy (PAS), photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS). In the undoped samples, two kinds of VZn-related defects, namely VZn1 and VZn2 are identified. VZn1 was identified in as-grown samples grown at relatively low substrate (~300 °C). After annealing at 900 °C, VZn-2, the green luminescence (GL) peaking at 2.47 eV and the near band edge (NBE) emission at 3.23 eV in the low temperature photoluminescence (LT-PL) were simultaneously introduced. Another kind of VZn-related defect is identified in the Cu-doped ZnO sample, and is tentatively assigned to the VZn decorated with the Cu.

Pr Doped YBCO Films Produced by Pulsed Laser Deposition

2006 ◽  
Vol 946 ◽  
Author(s):  
B. Craig Harrison ◽  
Joseph W. Kell ◽  
Paul N. Barnes ◽  
Timothy J. Haugan ◽  
Chakrapani V. Varanasi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Full Range ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pinning Force ◽  
Oxide Powders ◽  
Secondary Ion

ABSTRACTPr doped YBa2Cu3O7-d targets with composition Y1-xPrxBa2Cu3O7-d where × = 0.0001, 0.001, 0.01, and 0.1 were prepared from oxide powders and were used to deposit thin films by pulsed laser deposition using conditions previously optimized for pure YBa2Cu3O7-d. The Pr dopant was found to be dispersed throughout the film by secondary ion mass spectrometry and found to have an increased density of nanoparticles on the surface. The pinning force of the doped samples was found to decrease with increasing concentration of Pr; however, at 0.01% concentration the doped film displayed a significant enhancement over pure YBa2Cu3O7-d for nearly the full range of 0 – 9 T.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Pulse methods of strengthening nanocrystalline carbon coatings deposition

2021 ◽  
pp. 93-96
Author(s):  
Yu.V. Panfilov
Keyword(s):  
Magnetron Sputtering ◽  
Pulsed Laser ◽  
Ion Beams ◽  
Film Deposition ◽  
Laser Deposition ◽  
Vacuum Arc ◽  
Amorphous Coating ◽  
Nanostructured Film ◽  
Carbon Coatings ◽  
Pulsed Deposition

The most known methods of pulsed thin strengthening nanostructured film deposition such as magnetron sputtering HiPIMS, pulsed laser deposition PLD, vacuum arc pulsed deposition, high-intensity pulsed ion beams deposition HIPIB, as well, were described and analysed. It was shown that the stream of material, generated by means of a pulsed action, impacts to substrate and creates preconditions for nanocrystalline amorphous coating manufacture with superhigh hardness.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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