Solution Delivery for Copper CVD Using Cu(HFAC)2 Reduction

1998 ◽  
Vol 514 ◽  
Author(s):  
C. Zeng ◽  
N. S. Borgharkar ◽  
G. L. Griffin ◽  
H. Fan ◽  
A. W. Maverick
Keyword(s):  
Deposition Rate ◽  
Growth Rates ◽  
Deposition Temperature ◽  
Deposition Rates ◽  
Carrier Gas ◽  
Preliminary Results ◽  
Partial Pressures ◽  
Delivery Technique ◽  
Film Microstructure

ABSTRACTWe have developed a solution delivery technique for performing copper CVD using the reduction of Cu(hfac)2 [where H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionel. We have obtained deposition rates of up to 3.6 mg cm−2 hr−1 (ca. 60 nm min−1) for a deposition temperature of 300 °C and reactor conditions of 40 Torr H2, 12 Torr isopropanol, and 1 Torr Cu(hfac)2. The increased rates are several times faster than growth rates observed using conventional Cu(hfac)2 sublimation with pure H2 as the carrier gas. We compare growth rates and film microstructure using TiN- and WNx-coated substrates. We also give preliminary results showing how the partial pressures of H2, i-PrOH, and Cu(hfac)2 each influence the deposition rate.

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD

2014 ◽  
Vol 616 ◽  
pp. 227-231 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Preferred Orientation ◽  
Carrier Gas ◽  
Sic Film ◽  
Sic Films

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h−1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

Correlation among Si, Ge, and B deposition rates in low-pressure CVD with SiH4−GeH4−B2H6-He mixtures

1991 ◽  
Vol 6 (1) ◽  
pp. 92-96 ◽  
Author(s):  
Katsumi Murase
Keyword(s):  
Partial Pressure ◽  
Deposition Rate ◽  
Mass Density ◽  
Deposition Process ◽  
Time Interval ◽  
Deposition Rates ◽  
Partial Pressures ◽  
Unit Time Interval ◽  
Amorphous Si ◽  
The Relationship

The deposition process at 500 °C with SiH4–GeH4–B2H6–He mixtures, which yields the amorphous Si–Ge–B alloy, was studied. Although in crystalline Si and Ge the maximum B content is limited to the solid solubility, any amount of B can uniformly be contained in amorphous Si–Ge–B. Thus, films with a B content up to 64 at.% have been prepared. The deposition rate of atoms, defined as the number of atoms deposited in a unit time interval, is obtained for each element by analyzing the growth rate together with the composition and the mass density of the film. When the SiH4 and the B2H6 partial pressures are constant, the Si and the B deposition rates are almost independent of the GeH4 partial pressure. In contrast, the Si deposition rate increases remarkably as the B2H6 partial pressure increases, even when the SiH4 partial pressure is maintained constant. A simple model is proposed for explaining the relationship between the Si and the B deposition rates.

Reaction Kinetic in the CVD Process of Pyrocarbon Deposition from Propylene Pyrolysis

2012 ◽  
Vol 519 ◽  
pp. 193-196
Author(s):  
Cui Ying Lu ◽  
Lai Fei Cheng ◽  
Li Tong Zhang ◽  
Chun Nian Zhao
Keyword(s):  
Deposition Rate ◽  
Residence Time ◽  
Deposition Temperature ◽  
Reaction Kinetic ◽  
Constant Pressure ◽  
Chemical Model ◽  
Carbon Precursor ◽  
Deposition Rates ◽  
Kinetic Transition

The deposition rate(r) of pyrocarbon deposited from propylene pyrolysis has been explored as a function of residence time (tr=0.2-5s) and deposition temperature (T=1173-1333K) at a constant pressure of 6 kPa. The main feature of r vs. curves was that the deposition rate, firstly increase and then decrease with the residence time. A qualitative chemical model was developed and the kinetic domains were defined for the formation of pyrocarbon. The model could explain the change of deposition rates and kinetic transition due to the occurrence of two different families of ultimate carbon precursor.

Effect Of Phosphorus On Ge/Si(001) Island Formation

2002 ◽  
Vol 737 ◽  
Author(s):  
Theodore I. Kamins ◽  
Gilberto Medeiros-Ribeiro ◽  
Douglas A. A. Ohlberg ◽  
R. Stanley Williams
Keyword(s):  
Deposition Rate ◽  
Strain Energy ◽  
Competitive Adsorption ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Deposition Process ◽  
Thin Layers ◽  
Island Size ◽  
Partial Pressures ◽  
Intermediate Size

ABSTRACTWhen Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energies change, modifying the island shapes and sizes, as well as the deposition process. When phosphine is introduced to the germane/hydrogen ambient during Ge deposition, the deposition rate decreases because of competitive adsorption. The steady-state deposition rate is not reached for thin layers. The deposited, doped layers contain three different island shapes, as do undoped layers; however, the island size for each shape is smaller for the doped layers than for the corresponding undoped layers. The intermediate-size islands are the most significant; the intermediate-size doped islands are of the same family as the undoped, multifaceted “dome” structures, but are considerably smaller. The largest doped islands appear to be related to the defective “superdomes” discussed for undoped islands. The distribution between the different island shapes depends on the phosphine partial pressure. At higher partial pressures, the smaller structures are absent. Phosphorus appears to act as a mild surfactant, suppressing small islands.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

scholarly journals Variations of the martian CO2 abundance with Martian season

1971 ◽  
Vol 40 ◽  
pp. 196-202
Author(s):  
Edwin S. Barker
Keyword(s):  
Growth Parameters ◽  
Polar Cap ◽  
Preliminary Results ◽  
Regression Curves ◽  
The North ◽  
Partial Pressures ◽  
North Polar

All previous published equivalent widths of the Martian CO2 bands including the 1967 apparition coverage at McDonald Observatory are reduced to CO2 abundances using the same curve of growth parameters. The corresponding CO2 partial pressures (assuming a pure CO2 atmosphere), along with the regression curves of the north polar cap, are presented as functions of Martian heliocentric longitudes, Ls. A correlation is noted between the maximum CO2 abundance and minimum north cap diameter and the decrease in CO2 abundance when the northern polar haze begins to reform. Preliminary results of the 1969 apparition coverage at McDonald Observatory are also presented.

scholarly journals Observations on the increase in size at moulting in the lobster (Homarus vulgaris M.-Edw.)

1958 ◽  
Vol 37 (3) ◽  
pp. 603-606 ◽  
Author(s):  
H. J. Thomas
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Growth Increment ◽  
American Lobster ◽  
Limited Data ◽  
Preliminary Results ◽  
Home Department ◽  
The Individual ◽  
Marine Laboratory

A knowledge of growth rates is a pre-requisite in estimating the effect of fishing upon the available stocks. In Crustacea, where there is no known means of establishing accurately the age of the individual, the importance of measuring the growth rate is increased whilst its determination is made more difficult. In Homarus vulgaris some experiments were undertaken by Dannevig (1936), and Wilder (1953) gives considerable data for the American lobster. Results suggest that the growth increment is not uniform in all latitudes. Experiments to augment the limited data available for H. vulgaris and to establish the increase in size at moulting in local lobster stocks were therefore undertaken by the Marine Laboratory of the Scottish Home Department at Aberdeen. A statement of some preliminary results was given in Report on the Fisheries of Scotland (Lucas, 1957, p. 58).

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