Correlation among Si, Ge, and B deposition rates in low-pressure CVD with SiH4−GeH4−B2H6-He mixtures

1991 ◽  
Vol 6 (1) ◽  
pp. 92-96 ◽  
Author(s):  
Katsumi Murase
Keyword(s):  
Partial Pressure ◽  
Deposition Rate ◽  
Mass Density ◽  
Deposition Process ◽  
Time Interval ◽  
Deposition Rates ◽  
Partial Pressures ◽  
Unit Time Interval ◽  
Amorphous Si ◽  
The Relationship

The deposition process at 500 °C with SiH4–GeH4–B2H6–He mixtures, which yields the amorphous Si–Ge–B alloy, was studied. Although in crystalline Si and Ge the maximum B content is limited to the solid solubility, any amount of B can uniformly be contained in amorphous Si–Ge–B. Thus, films with a B content up to 64 at.% have been prepared. The deposition rate of atoms, defined as the number of atoms deposited in a unit time interval, is obtained for each element by analyzing the growth rate together with the composition and the mass density of the film. When the SiH4 and the B2H6 partial pressures are constant, the Si and the B deposition rates are almost independent of the GeH4 partial pressure. In contrast, the Si deposition rate increases remarkably as the B2H6 partial pressure increases, even when the SiH4 partial pressure is maintained constant. A simple model is proposed for explaining the relationship between the Si and the B deposition rates.

Effect Of Phosphorus On Ge/Si(001) Island Formation

2002 ◽  
Vol 737 ◽  
Author(s):  
Theodore I. Kamins ◽  
Gilberto Medeiros-Ribeiro ◽  
Douglas A. A. Ohlberg ◽  
R. Stanley Williams
Keyword(s):  
Deposition Rate ◽  
Strain Energy ◽  
Competitive Adsorption ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Deposition Process ◽  
Thin Layers ◽  
Island Size ◽  
Partial Pressures ◽  
Intermediate Size

ABSTRACTWhen Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energies change, modifying the island shapes and sizes, as well as the deposition process. When phosphine is introduced to the germane/hydrogen ambient during Ge deposition, the deposition rate decreases because of competitive adsorption. The steady-state deposition rate is not reached for thin layers. The deposited, doped layers contain three different island shapes, as do undoped layers; however, the island size for each shape is smaller for the doped layers than for the corresponding undoped layers. The intermediate-size islands are the most significant; the intermediate-size doped islands are of the same family as the undoped, multifaceted “dome” structures, but are considerably smaller. The largest doped islands appear to be related to the defective “superdomes” discussed for undoped islands. The distribution between the different island shapes depends on the phosphine partial pressure. At higher partial pressures, the smaller structures are absent. Phosphorus appears to act as a mild surfactant, suppressing small islands.

scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

scholarly journals Prestorage Conditioning and Diphenylamine Improve Resistance to Controlled-atmosphere-related Injury in ‘Honeycrisp’ Apples

HortScience ◽  
2014 ◽  
Vol 49 (1) ◽  
pp. 76-81 ◽  
Author(s):  
Carolina Contreras ◽  
Nihad Alsmairat ◽  
Randy Beaudry
Keyword(s):  
Partial Pressure ◽  
Injury Severity ◽  
Controlled Atmosphere ◽  
Complete Control ◽  
Conditioning Period ◽  
Partial Pressures ◽  
Apple Cultivars ◽  
Honeycrisp Apples ◽  
The Relationship ◽  
Significant Linkage

‘Honeycrisp’ apples were found to be sensitive to injury from O2 and CO2 partial pressures typical of those in controlled-atmosphere (CA) storage. A preliminary study was conducted in 2008 to investigate the effect of the following O2/CO2 partial pressure (kPa) combinations: 1/0, 3/0, 1/3, 3/3, 21/3, 21/0 (air), and 21/0 with 1-methylcyclopropene (1-MCP; 1 μL·L−1) on CA-related injuries of 'Honeycrisp' during storage for 6 months at 3 °C. ‘Honeycrisp’ apples were found to be sensitive to an injury comprised of irregular-edged brown lesions in the cortex occasionally accompanied by the formation of lens-shaped voids. The symptoms are similar to CA-related injuries described for other apple cultivars and often characterized as a “CO2 injury.” Injury severity increased as O2 declined and as CO2 increased and was evident within the first month of storage. During 2009, 2010, and 2011, a study was conducted to evaluate options for avoiding injury during CA storage for this cultivar. Fruit were conditioned at 3, 10, and 20 °C for 5 days and then exposed to the following O2/CO2 partial pressure combinations: 3/0, 3/3, 21/0 (regular air); 3/3 with diphenylamine (DPA) drench (1 g·L−1); and 21/0 with 1-MCP (1 μL·L−1). Injury severity declined as the temperature of the prestorage conditioning period increased; holding fruit for 5 days at 20 °C almost completely eliminated the disorder. The antioxidant DPA also provided nearly complete control of CA injury. 1-MCP, although not studied in conjunction with a modified atmosphere, was found to cause no injury in air storage and may provide an alternative to CA storage and avoid the risk of CA injury for ’Honeycrisp’. The relationship between disorder development and growing degree-days, rainfall, and maturity indexes was studied. Ethylene was the only factor with a significant linkage to the development of CA injury (R2 = 0.35; P = 0.0043). Suggestions for handling of ‘Honeycrisp’ for extended storage are presented.

Solution Delivery for Copper CVD Using Cu(HFAC)2 Reduction

1998 ◽  
Vol 514 ◽  
Author(s):  
C. Zeng ◽  
N. S. Borgharkar ◽  
G. L. Griffin ◽  
H. Fan ◽  
A. W. Maverick
Keyword(s):  
Deposition Rate ◽  
Growth Rates ◽  
Deposition Temperature ◽  
Deposition Rates ◽  
Carrier Gas ◽  
Preliminary Results ◽  
Partial Pressures ◽  
Delivery Technique ◽  
Film Microstructure

ABSTRACTWe have developed a solution delivery technique for performing copper CVD using the reduction of Cu(hfac)2 [where H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionel. We have obtained deposition rates of up to 3.6 mg cm−2 hr−1 (ca. 60 nm min−1) for a deposition temperature of 300 °C and reactor conditions of 40 Torr H2, 12 Torr isopropanol, and 1 Torr Cu(hfac)2. The increased rates are several times faster than growth rates observed using conventional Cu(hfac)2 sublimation with pure H2 as the carrier gas. We compare growth rates and film microstructure using TiN- and WNx-coated substrates. We also give preliminary results showing how the partial pressures of H2, i-PrOH, and Cu(hfac)2 each influence the deposition rate.

Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process

2020 ◽  
Vol 8 (21) ◽  
pp. 7120-7131 ◽  
Author(s):  
Dae-Hong Min ◽  
Tae-Hyun Ryu ◽  
So-Jung Yoon ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deposition Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sputtering Deposition ◽  
Partial Pressures

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using HfxZr1−xO2 thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.

Effect of CO2 on Anti-Corrosion Property of a Polyurea Coating Modified with Organosilicone

2014 ◽  
Vol 789 ◽  
pp. 466-470
Author(s):  
Qing Hao Shi ◽  
Bing Ying Wang ◽  
Bin Zhao
Keyword(s):  
High Temperature ◽  
Partial Pressure ◽  
Composite Coating ◽  
Corrosion Test ◽  
Electrochemical Impedance ◽  
Failure Process ◽  
Corrosion Property ◽  
Corrosion Mechanism ◽  
Partial Pressures ◽  
High Temperature High Pressure

The corrosion mechanism of organic silicon modified polyurea composite coating under different CO2 partial pressures was studied using high-temperature autoclave, combined with scanning electron microscopy (SEM), adhesion tests and electrochemical impedance spectroscopy (EIS) technology. The experimental results showed that: there was no corrosion product formed on the surface of coating sample after high-temperature high-pressure corrosion test, and with the increasing of CO2 partial pressure, the coating adhesion and impedance values decline increases. Moreover CO2 partial pressure increases accelerated the failure process of polyurea composite coating system.

Recrystallization of Oxygen Contaminated Al Films

1986 ◽  
Vol 71 ◽  
Author(s):  
G.J. Van Der Kolk ◽  
M.J. Verkerk
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Relative Increase ◽  
Partial Pressures ◽  
Average Grain Size

AbstractAl was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Controlled partial melting during isobaric and isothermal processing of dipcoated Bi-2212/Ag tapes

1998 ◽  
Vol 13 (12) ◽  
pp. 3580-3586 ◽  
Author(s):  
A. L. Crossley ◽  
J. L. MacManus-Driscoll
Keyword(s):  
Phase Diagram ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Melting ◽  
Coulometric Titration ◽  
Processing Route ◽  
Optimum Processing ◽  
Partial Pressures ◽  
Titration Technique

A detailed study has been made of the control and optimization of partial melting of dipcoated Bi2Sr2Ca1Cu2O8+δAg0.1 (Bi-2212) tapes using reduced oxygen partial pressures. A coulometric titration technique has been employed to vary the oxygen partial pressure in a region of the phase diagram corresponding to binary melting, and the amount of partial melting has been quantified. Using this information, tapes have been processed using both isothermal and isobaric techniques. An optimum processing route was determined which combined isothermal and isobaric processes. Highly aligned material at the point of optimum melting was obtained.

Effects of acetone in heparin on the multiple inert gas elimination technique

1985 ◽  
Vol 58 (4) ◽  
pp. 1143-1147 ◽  
Author(s):  
F. L. Powell ◽  
F. A. Lopez ◽  
P. D. Wagner
Keyword(s):  
Partial Pressure ◽  
Dead Space ◽  
Room Temperature ◽  
Inert Gas ◽  
Published Data ◽  
Physiological Mechanisms ◽  
Heparinized Saline ◽  
Partial Pressures ◽  
Ventilation Perfusion Ratio ◽  
Mixed Venous

We have detected acetone in several brands of heparin. If uncorrected, this leads to errors in measuring acetone in blood collected in heparinized syringes, as in the multiple inert gas elimination technique for measuring ventilation-perfusion ratio (VA/Q) distributions. Error for acetone retention [R = arterial partial pressure-to-mixed venous partial pressure (P-V) ratio] is usually small, because R is normally near 1.0, and the error is similar in arterial and mixed venous samples. However, acetone excretion [E = mixed expired partial pressure (P-E)-to-P-V ratio] will appear erroneously low, because P-E is accurately measured in dry syringes, but P-V is overestimated. A physical model of a homogeneous alveolar lung at room temperature and without dead space shows: the magnitude of acetone E error depends upon the ratio of blood sample to heparinized saline volumes and acetone partial pressures, without correction, acetone E can be less than that of less soluble gases like ether, a situation incompatible with conventional gas exchange theory, and acetone R and E can be correctly calculated using the principle of mass balance if the acetone partial pressure in heparinized saline is known. Published data from multiple inert gas elimination experiments with acetone-free heparin, in our labs and others, are within the limits of experimental error. Thus the hypothesis that acetone E is anomalously low because of physiological mechanisms involving dead space tissue capacitance for acetone remains to be tested.

Sign in / Sign up

Export Citation Format

Share Document