Electrical Active Defects in the Band-Gap Induced by Ge-Preamorphization of Si-Substrates

1998 ◽  
Vol 532 ◽  
Author(s):  
F. Boussaid ◽  
F. Olivie ◽  
M. Benzohra ◽  
D. Alquier ◽  
A. Claverie ◽  
...  
Keyword(s):  
Band Gap ◽  
Deep Level ◽  
Silicon Layer ◽  
Low Energy ◽  
Silicon Substrates ◽  
High Concentration ◽  
Si Substrates ◽  
Implantation Damage ◽  
Transient Capacitance ◽  
Transient Spectroscopy

ABSTRACTUltra-shallow p+ -n junctions have been obtained from Ge+ -preamorphized and crystalline <100> silicon substrates. B+ and BF2+ dopants have been used. Boron was implanted at low energy 3 keV / 1015 cm−2 while an equivalent energy of 15 keV / 1015 cm−2 was chosen for BF2+. Rapid Thermal Annealing (RTA) for 15 s at 950 °C was then used for dopant electrical activation and implantation damage removal. Electrically active defects in these samples were characterized using Deep Level Transient Spectroscopy (DLTS) and isothermal transient capacitance (ΔC(t, T)). Two electron traps were detected in the upper half of the band gap at Ec – 0.20 eV and Ec – 0.45 eV, respectively. These traps are shown to be induced by the Ge+ preamorphization stage. Dopant implantation along with RTA result in the formation of a depth distributed energy continuum for B+ and BF2+ implants. Each continuum has been ascribed to annealing residual defects. Low energy B+ implantation is seen to induce twice as many defects as BF2+, implantation. From isothermal transient capacitance (ΔC(t, T)), reliable damage concentration profiles have been obtained, revealing that preamorphization induces not only defects in the regrown silicon layer but also a relatively high concentration of electrically active defects up to 3.5 μm into the bulk.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

2015 ◽  
Vol 242 ◽  
pp. 61-66
Author(s):  
Eddy Simoen ◽  
Valentina Ferro ◽  
Barry O’Sullivan
Keyword(s):  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Silicon Layer ◽  
Si Substrate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Transient Spectroscopy ◽  
P Type ◽  
Mis Capacitors

Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p+ or n+ a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (Pb0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p+ a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p+ or n+ a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis.

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

2001 ◽  
Vol 692 ◽  
Author(s):  
Daniel K. Johnstonea ◽  
Mohamed Ahoujjab ◽  
Yung Kee Yeoc ◽  
Robert L. Hengeholdc ◽  
Louis Guidod
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Energy Concentration ◽  
Organic Chemical ◽  
High Concentration ◽  
Current Voltage ◽  
Carrier Traps ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractGaN and its related alloys are being widely developed for blue-ultraviolet emitting and detection devices as well as high temperature, high power, and high frequency electronics. Despite the fast improvement in the growth of good quality GaN, a high concentration of deep level defects of yet unconfirmed origins are still found in GaN. For both optical and electronic devices, these deep carrier traps and/or recombination centers are very important and must therefore be understood. In the present work, deep level defects in GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) have been investigated using Isothermal Capacitance Transient Spectroscopy (ICTS) and Current Voltage Temperature (IVT) measurements. Several deep level electron traps were characterized, obtaining the emission energy, concentration, and capture cross section from a fit of exponentials to the capacitance transients. ICTS was also used to reveal information about the capture kinetics involved in the traps found in GaN by measuring the amplitude of the capacitance transient at each temperature. At a reduced filling pulse where the traps were not saturated, several of them showed marked reduction in capacitance transient amplitude when compared to the transient amplitude measured under conditions where the filling pulse saturates the traps. This reduction in transient amplitude indicates that there is a barrier to carrier capture, in addition to the emission barrier. It has been found that several traps had capture barriers that were significant fractions of the emission energies up to 0.32 eV. These capture barriers may lead to persistent photoconductivity and reduced trapping. In this paper, deep level emission energies as well as capture barrier energies found in MOCVD-grown GAN will be discussed.

Sign in / Sign up

Export Citation Format

Share Document