Mechanical and Thermophysical Properties of Silicon Nitride Thin Films at High Temperatures Using In-Situ Mems Temperature Sensors

1998 ◽  
Vol 546 ◽  
Author(s):  
Patricia Nieva ◽  
Haruna Tada ◽  
Paul Zavracky ◽  
George Adams ◽  
Ioannis Miaoulis ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
High Temperatures ◽  
Thermophysical Properties ◽  
Microelectromechanical Systems ◽  
Coefficient Of Thermal Expansion ◽  
Maximum Temperature ◽  
Wide Range

AbstractThe optimization of microelectronic devices and Microelectromechanical Systems (MEMS) technology depends on the knowledge of the mechanical and thermophysical properties of the thin film materials used to fabricate them. The thickness, stoichiometry, structure and thermal history can affect the properties of thin films causing their mechanical and thermophysical properties to diverge from bulk values. Moreover, it is known that the mechanical and thermophysical properties of thin films vary considerably at different temperatures. Bulk properties of semiconductors have been characterized over a wide range of temperatures; however there is limited information on thin film properties of silicon-based compounds such as silicon nitride, specially at high temperatures. In our work, MEMS devices designed to record the localized maximum temperature during high temperature thermal processes, which we call Breaking T-MEMS, will be presented as a way to determine some of the mechanical properties (Young's modulus and fracture strength) and thermophysical properties (coefficient of thermal expansion) of silicon-rich nitride thin films at high temperatures.The Breaking T-MEMS device consists of a thin film bridge suspended over a substrate. During testing, the devices are thermally loaded in tension by heating the sample. The low coefficient of thermal expansion of the film relative to that of the substrate causes the thin film bridge to break at a specific temperature. Through a combination of indirect experimental measurements, analytical expressions, numerical and statistical analysis, and if the experiments are conducted using at least two different substrates of known temperaturedependent coefficients of thermal expansion, some of the material properties of the film can be calculated from the breaking temperatures of various devices. The two candidate materials for the substrate are silicon and aluminum oxide (sapphire).

Temperature-Dependent Coefficient of Thermal Expansion of Silicon Nitride Films Used in Microelectromechanical Systems

1999 ◽  
Vol 605 ◽  
Author(s):  
Melissa Bargmann ◽  
Amy Kumpel ◽  
Haruna Tada ◽  
Patricia Nieva ◽  
Paul Zavracky ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Silicon Nitride ◽  
Cantilever Beam ◽  
High Temperatures ◽  
Microelectromechanical Systems ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Temperature Property ◽  
Silicon Nitride Films

AbstractMicroelectromechanical systems (MEMS) have potential application in high temperature environments such as in thermal processing of microelectronics. The MEMS designs require an accurate knowledge of the temperature dependent thermomechanical properties of the materials. Techniques used at room temperature often cannot be used for high-temperature property measurements. MEMS test structures have been developed in conjunction with a novel imaging apparatus designed to measure either the modulus of elasticity or thermal expansion coefficient of thin films at high temperatures. The MEMS test structure is the common bi-layered cantilever beam which undergoes thermally induced deflection at high temperatures. An individual cantilever beam on the order of 100 νm long can be viewed up to approximately 800°C. With image analysis, the curvature of the beam can be determined; and then the difference in coefficient of thermal expansion between the two layers can be determined using numerical modeling. The results of studying silicon nitride films on silicon oxide are presented for a range of temperatures.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

A Technique for Deducing In-Plane Modulus and Coefficient of Thermal Expansion of a Supported Thin Film

2002 ◽  
Vol 124 (2) ◽  
pp. 274-277 ◽  
Author(s):  
Martin Y. M. Chiang ◽  
Chwan K. Chiang ◽  
Wen-li Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Elastic Modulus ◽  
Coefficient Of Thermal Expansion ◽  
Thermal And Mechanical Properties ◽  
Reduction Scheme ◽  
Coupled Equations

A technique for determining the in-plane modulus and the coefficient of thermal expansion (CTE) of supported thin films has been developed. The modulus and CTE are calculated by solving two coupled equations that relate the curvature of film samples deposited on two different substrates to the thermal and mechanical properties of the constituents. In contrast with the conventional method used to calculate modulus and CTE, which involves differentiation of the thermal stress in the film, this new technique does not require the differentiation of the thermal stress, and can also provide the temperature-dependence of the in-plane CTE and elastic modulus of supported thin films. The data reduction scheme used for deducing CTE and elastic modulus is direct and reliable.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Resonant Fatigue Testing of Cantilever Specimens Prepared from Thin Films

2008 ◽  
Vol 1139 ◽  
Author(s):  
Kwangsik Kwak ◽  
Masaaki Otsu ◽  
Kazuki Takashima
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cantilever Beam ◽  
Microelectromechanical Systems ◽  
Fatigue Testing ◽  
Crystalline Silicon ◽  
Gold Foil ◽  
Fatigue Properties ◽  
Mems Devices ◽  
Testing Method

AbstractFatigue properties of thin film materials are extremely important to design durable and reliable microelectromechanical systems (MEMS) devices. However, it is rather difficult to apply conventional fatigue testing method of bulk materials to thin films. Therefore, a fatigue testing method fitted to thin film materials is required. In this investigation, we have developed a fatigue testing method that uses a resonance of cantilever type specimen prepared from thin films. Cantilever beam specimens with dimensions of 1(W) × 3(L) × 0.01(t) mm3 were prepared from Ni-P amorphous alloy thin films and gold foils. In addition, cantilever beam specimens with dimension of 3(L) × 0.3(W) × 0.005(t) mm3 were also prepared from single crystalline silicon thin films. These specimens were fixed to a holder that is connected to an golddio speaker used as an actuator, and were resonated in bending mode. In order to check the validity of this testing method, Young's moduli of these specimens were measured from resonant frequencies. The average Young's modulus of Ni-P was 108 GPa and that of gold foil specimen was 63 GPa, and these values were comparable with those measured by other techniques. This indicates that the resonance occurred theoretically-predicted manner and this testing method is valid for measuring the fatigue properties of thin films. Resonant fatigue tests were carried out for these specimens by changing amplitude range of resonance, and S-N curves were successfully obtained.

Hygrothermal Behavior of Advanced Polymers Above Water Boiling Temperatures

2014 ◽  
Vol 136 (1) ◽  
Author(s):  
Changsoo Jang ◽  
Bongtae Han
Keyword(s):  
Thermal Expansion ◽  
Moisture Content ◽  
Coefficient Of Thermal Expansion ◽  
Measurement Data ◽  
Hybrid Procedure ◽  
Boiling Temperature ◽  
Hygrothermal Behavior ◽  
Expansion Behavior ◽  
Wide Range ◽  
Moisture Conditions

Hygroscopic and thermal expansion behavior of advanced polymers is investigated when subjected to combined high temperature and moisture conditions. An enhanced experimental–numerical hybrid procedure is proposed to overcome the limitations of the existing methods when used at temperatures above the water boiling temperature. The proposed procedure is implemented to measure the hygrothermal strains of three epoxy molding compounds and a no-filler underfill over a wide range of temperatures including temperatures beyond the water boiling temperature. The effects of moisture content on the glass transition temperature (Tg) and coefficient of thermal expansion (CTE) are evaluated from the measurement data. A formulation to predict the Tg change as a function of moisture content is also presented.

Determination of Mechanical Properties of Thin Film on Silicon Wafer

2003 ◽  
Author(s):  
Enboa Wu ◽  
Albert J. D. Yang ◽  
Ching-An Shao ◽  
C. S. Yen
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Silicon Wafer ◽  
Coefficient Of Thermal Expansion ◽  
Young's Modulus ◽  
Poisson Ratio ◽  
Bulk State

Nondestructive determination of Young’s modulus, coefficient of thermal expansion, Poisson ratio, and thickness of a thin film has long been a difficult but important issue as the film of micrometer order thick might behave differently from that in the bulk state. In this paper, we have successfully demonstrated the capability of determining all these four parameters at one time. This novel method includes use of the digital phase-shifting reflection moire´ (DPRM) technique to record the slope of wafer warpage under temperature drop condition. In the experiment, 1-um thick aluminum was sputtered on a 6-in silicon wafer. The convolution relationship between the measured data and the mechanical properties was constructed numerically using the conventional 3D finite element code. The genetic algorithm (GA) was adopted as the searching tool for search of the optimal mechanical properties of the film. It was found that the determined data for Young’s modulus (E), Coefficient of Thermal Expansion (CTE), Poisson ratio (ν), and thickness (h) of the 1.00 um thick aluminum film were 104.2Gpa, 38.0 ppm/°C, 0.38, and 0.98 um, respectively, whereas that in the bulk state were measured to be E=71.4 Gpa, CTE=23.0 ppm/°C, and ν=0.34. The significantly larger values on the Young’s modulus and the coefficient of thermal expansion determined by this method might be attributed to the smaller dislocation density due to the thin dimension and formation of the 5-nm layer of Al2O3 formed on top of the 1-um thick sputtered film. The Young’s Modulus and the Poisson ratio of this nano-scale Al2O3 film were then determined. Their values are consistent with the physical intuition of the microstructure.

scholarly journals A Proposal for a Composite with Temperature-Independent Thermophysical Properties: HfV2–HfV2O7

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5021
Author(s):  
Philipp Keuter ◽  
Anna L. Ravensburg ◽  
Marcus Hans ◽  
Soheil Karimi Aghda ◽  
Damian M. Holzapfel ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Temperature Coefficient ◽  
Thermophysical Properties ◽  
Coefficient Of Thermal Expansion ◽  
Negative Thermal Expansion ◽  
Phase Fraction ◽  
Formation Temperature ◽  
Oxygen Mobility ◽  
Zero Temperature ◽  
Coefficient Of Elasticity

The HfV2–HfV2O7 composite is proposed as a material with potentially temperature-independent thermophysical properties due to the combination of anomalously increasing thermoelastic constants of HfV2 with the negative thermal expansion of HfV2O7. Based on literature data, the coexistence of both a near-zero temperature coefficient of elasticity and a coefficient of thermal expansion is suggested for a composite with a phase fraction of approximately 30 vol.% HfV2 and 70 vol.% HfV2O7. To produce HfV2–HfV2O7 composites, two synthesis pathways were investigated: (1) annealing of sputtered HfV2 films in air to form HfV2O7 oxide on the surface and (2) sputtering of HfV2O7/HfV2 bilayers. The high oxygen mobility in HfV2 is suggested to inhibit the formation of crystalline HfV2–HfV2O7 composites by annealing HfV2 in air due to oxygen-incorporation-induced amorphization of HfV2. Reducing the formation temperature of crystalline HfV2O7 from 550 °C, as obtained upon annealing, to 300 °C using reactive sputtering enables the synthesis of crystalline bilayered HfV2–HfV2O7.

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