In2O3 Based Multicomponent Oxide Transparent Conducting Films Prepared by R.F. Magnetron Sputtering

2000 ◽  
Vol 623 ◽  
Author(s):  
Tadatsugu Minami ◽  
Toshihiro Miyata ◽  
Hidenobu Toda ◽  
Shingo Suzuki
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Etching Rate ◽  
Oxide Films ◽  
Chemical Properties ◽  
High Energy ◽  
Band Gap Energy ◽  
Multicomponent Oxide ◽  
Multicomponent Oxides ◽  
Conductive Thin Films

AbstractTransparent and conductive thin films using new multicomponent oxides consisting of a combination of different In2O3 based ternary compounds have been prepared on room temperature substrates by r.f. magnetron sputtering. Transparent and conductive (Ga,In)2O3-MgIn2O4, (Ga,In)2O3-Zn2In2O2, (Ga,In)2O3-In4Sn3O12, Zn2In2O5,-In4Sn3O12 and Zn21n2O5-MgIn2O4 films were prepared over the whole range of compositions in these multicomponent oxides. The electrical and chemical properties of the resulting films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent oxide films ranged between the properties of the two ternary compound films. This paper also presents a discussion of a significant spatial distribution of resistivity found on the substrate of the multicomponent oxide films as a function of composition. The resistivity distribution is attributable to the oxygen concentration on the substrate surface rather than the bombardment effect of high energy particles.

scholarly journals Effect of pulsed magnetron sputtering process for the deposition of thin layers of nickel and nickel oxide

2018 ◽  
Vol 36 (1) ◽  
pp. 69-74 ◽  
Author(s):  
Witold Posadowski ◽  
Artur Wiatrowski ◽  
Grzegorz Kapka
Keyword(s):  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Oxide Films ◽  
High Energy ◽  
Film Deposition ◽  
Thin Layers ◽  
Sputtering Power ◽  
Thin Nickel ◽  
Nickel Oxide Films ◽  
Pulsed Magnetron

Abstract Magnetron sputtered nickel and nickel oxide films have been studied for various applications. We may find, among others, these films in electrochromic display devices, in resistive type gas sensors, as metal electrodes in electronic devices, in solar thermal absorbers. Pure nickel films deposited using PVD technique possess good corrosion and wear resistant properties. Magnetron sputtering has several advantages in film deposition (in comparison to other methods) such as relatively low heating temperature of the deposited substrate during sputtering process, high energy of sputtered atoms (about 10 eV) at the substrate, which influences positively the films adhesion. From application point of view, the most valuable feature of these films is the possibility of scaling target dimensions, which makes feasible the deposition on a several square meter surfaces. The improvement of magnetron sputtering devices design may influence positively the optimization of the deposition technology and its efficiency. The thin nickel and nickel oxide films were prepared by pulsed magnetron sputtering using original type WMK magnetron device. Ni (99.9 %) has been used as a sputtering target of 100 mm in diameter and different thicknesses (3 mm, 5 mm, and 6 mm). The distance between the substrate and target was the same in all experiments and equal to 120 mm. Argon and oxygen gases were introduced during the reactive process through needle gas valves at a total pressure of 0.4 Pa. The sputtering power, sputtering pressure and oxygen partial pressure have been used as technological knobs for deposition processes. The helpful tool for controlling the pulsed magnetron sputtering process was the original parameter of supply (so called circulating power). Results from our experiments showed that the deposition of Ni films is possible even from targets of 6 mm thickness. Deposition rate increased proportionally with the sputtering power. The aim of this work is to use the acquired expertise to develop an efficient technology of thin nickel oxide layers for electrochromic systems.

Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

2015 ◽  
Vol 45 ◽  
pp. 191-196 ◽  
Author(s):  
Neil R. Murphy ◽  
Regina C. Gallagher ◽  
Lirong Sun ◽  
John G. Jones ◽  
John T. Grant
Keyword(s):  
Magnetron Sputtering ◽  
Oxide Films ◽  
Chemical Properties ◽  
Dc Magnetron Sputtering ◽  
Rhenium Oxide ◽  
And Chemical Properties

Photo-CVD of Dielectric Films by a Microwave-Excited VUV Lamp

1986 ◽  
Vol 75 ◽  
Author(s):  
Kouichi Tamagawa ◽  
Toshio Hayashi ◽  
Souji Komiya
Keyword(s):  
Silicon Nitride ◽  
Oxide Film ◽  
Substrate Surface ◽  
Etching Rate ◽  
Oxide Films ◽  
Dielectric Films ◽  
Rare Gas ◽  
Nitride Film ◽  
Excimer Lasers ◽  
Photo Ionization

AbstractSilicon nitride and oxide films have been formed using a photo-CVD apparatus with a microwave-excited VUV lamp. The lamp used was a D2 lamp or a rare gas resonance line lamp such as Xe and Kr. For the nitride film deposited at 320 °C, the BHF etching rate of the film, 40–70Å/min, is lower by less than one-tenth than that deposited using a conventional low-pressure Hg lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13Å/min to 100Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface and by ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions. The BHF etching rate of the oxide film is considerably lower than those formed using a Hg lamp and excimer lasers, and is similar to that using conventional PE-CVD. Conformal step coverage has been obtained for both the silicon nitride and oxide films.

scholarly journals Track PVB membrane based on irradiation with high energy protons

e-Polymers ◽  
2009 ◽  
Vol 9 (1) ◽  
Author(s):  
Muhammad Shadman ◽  
Farhood Ziaie ◽  
Saeid Yeganegi ◽  
Behrooz Niazi ◽  
Farshid Ziaee ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Etching Rate ◽  
Chemical Properties ◽  
Polyvinyl Butyral ◽  
Porous Membrane ◽  
High Energy ◽  
Optical Microscope ◽  
Etching Technique ◽  
Scanning Electron

AbstractOne of the methods of polymeric material modification is based on the irradiation with accelerated ions. Chemical etching of ion tracks in polymers is a method which is widely used in the fabrication of micro/nano-structures with predetermined characteristics. For the present study polyvinyl butyral (PVB) porous membrane was prepared by track-etching technique. Commercially available PVB film was irradiated by 30 MeV energy protons to form latent tracks, and then etched chemically by potassium hydroxide (KOH) with the different normalities. The etching rate of PVB was related to the concentration of etching reagent, temperature and time. The porous size and shape were investigated by scanning electron microscope (SEM) after and before etching. Relationships in between the etching rate and the etching parameters were established from experimental data, and can be used to control the pore size of PVB track-etch membrane. The Pore sizes and their structures were evaluated by optical microscope (OM) and scanning electron microscope (SEM). The results have shown the micro/nano-pores formation in the PVB films. The physico-chemical properties of the irradiated samples were investigated and compared with the un-irradiated one using the FTIR and DSC and DTG systems, as well.

scholarly journals Effects of Long Durations of RF–Magnetron Sputtering Deposition of Hydroxyapatite on Titanium Dental Implants

2021 ◽  
Author(s):  
Ihab Nabeel Safi ◽  
Basima Mohammed Ali Hussein ◽  
Hikmat J. Aljudy ◽  
Mustafa S. Tukmachi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Magnetron Sputtering ◽  
Dental Implants ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
P Value ◽  
Edx Analysis ◽  
Significant Difference ◽  
Scanning Electron

Abstract Objectives Dental implant is a revolution in dentistry; some shortages are still a focus of research. This study use long duration of radiofrequency (RF)–magnetron sputtering to coat titanium (Ti) implant with hydroxyapatite (HA) to obtain a uniform, strongly adhered in a few micrometers in thickness. Materials and Methods Two types of substrates: discs and root form cylinders were prepared using a grade 1 commercially pure (CP) Ti rod. A RF–magnetron sputtering device was used to coat specimens with HA. Magnetron sputtering was set at 150 W for 22 hours at 100°C under continuous argon gas flow and substrate rotation at 10 rpm. Coat properties were evaluated via field emission scanning electron microscopy (FESEM), scanning electron microscopy–energy dispersive X-ray (EDX) analysis, atomic force microscopy, and Vickers hardness (VH). Student’s t-test was used. Results All FESEM images showed a homogeneous, continuous, and crack-free HA coat with a rough surface. EDX analysis revealed inclusion of HA particles within the substrate surface in a calcium (Ca)/phosphorus (P) ratio (16.58/11.31) close to that of HA. Elemental and EDX analyses showed Ca, Ti, P, and oxygen within Ti. The FESEM views at a cross-section of the substrate showed an average of 7 µm coat thickness. Moreover, these images revealed a dense, compact, and uniform continuous adhesion between the coat layer and the substrate. Roughness result indicated highly significant difference between uncoated Ti and HA coat (p-value < 0.05). A significant improvement in the VH value was observed when coat hardness was compared with the Ti substrate hardness (p-value < 0.05). Conclusion Prolonged magnetron sputtering successfully coat Ti dental implants with HA in micrometers thickness which is well adhered essentially in excellent osseointegration.

scholarly journals Bismuth-213 for Targeted Radionuclide Therapy: From Atom to Bedside

Pharmaceutics ◽  
2021 ◽  
Vol 13 (5) ◽  
pp. 599
Author(s):  
Stephen Ahenkorah ◽  
Irwin Cassells ◽  
Christophe M. Deroose ◽  
Thomas Cardinaels ◽  
Andrew R. Burgoyne ◽  
...  
Keyword(s):  
Cancer Treatment ◽  
Radionuclide Therapy ◽  
Chemical Properties ◽  
High Energy ◽  
Magic Bullet ◽  
Targeted Radionuclide Therapy ◽  
Energy Photon ◽  
Normal Tissues ◽  
Preclinical And Clinical Studies ◽  
Alpha Therapy

In contrast to external high energy photon or proton therapy, targeted radionuclide therapy (TRNT) is a systemic cancer treatment allowing targeted irradiation of a primary tumor and all its metastases, resulting in less collateral damage to normal tissues. The α-emitting radionuclide bismuth-213 (213Bi) has interesting properties and can be considered as a magic bullet for TRNT. The benefits and drawbacks of targeted alpha therapy with 213Bi are discussed in this review, covering the entire chain from radionuclide production to bedside. First, the radionuclide properties and production of 225Ac and its daughter 213Bi are discussed, followed by the fundamental chemical properties of bismuth. Next, an overview of available acyclic and macrocyclic bifunctional chelators for bismuth and general considerations for designing a 213Bi-radiopharmaceutical are provided. Finally, we provide an overview of preclinical and clinical studies involving 213Bi-radiopharmaceuticals, as well as the future perspectives of this promising cancer treatment option.

scholarly journals Templated quasicrystalline ordering of single elements and molecules

2014 ◽  
Vol 70 (a1) ◽  
pp. C81-C81
Author(s):  
H. R. Sharma ◽  
J. A. Smerdon ◽  
K. Nozawa ◽  
K. M. Young ◽  
T. P. Yadav ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Properties ◽  
Scanning Tunneling ◽  
Three Dimension ◽  
Tunneling Microscopy ◽  
Quantum Size ◽  
Adsorption Energies ◽  
Molecular Layers ◽  
Physical And Chemical ◽  
The Impact

We have used quasicrystals as templates for the exploration of new epitaxial phenomena. Several interesting results have been observed in the growth on surfaces of the common Al-based quasicrystals [1]. These include pseudomorphic monolayers, quasiperiodically modulated multilayer structures, and fivefold-twinned islands with magic heights influenced by quantum size effects [1]. Here we present our recent works on the growth of various elements and molecules on a new substrate, icosahedral (i) Ag-In-Yb quasicrystal, which have resulted in various epitaxial phenomena not observed previously. The growth of Pb on the five-fold surface of i-Ag-In-Yb yields a film which possesses quasicrystalline ordering in three-dimension [2]. Using scanning tunneling microscopy (STM) and DFT calculations of adsorption energies, we find that lead atoms occupy the positions of atoms in the rhombic triacontahedral (RTH) cluster, the building block of the substrate, and thus grow in layers with different heights and adsorption energies. The adlayer–adlayer interaction is crucial for stabilizing the epitaxial quasicrystalline structure. We will also present the first example of quasicrystalline molecular layers. Pentacene adsorbs at tenfold-symmetric sites of Yb atoms around surface-bisected RTH clusters, yielding quasicrystalline order [3]. Similarly, C-60 growth on the five-fold surface of i-Al-Cu-Fe at elevated temperature produces quasicrystalline layer, where the growth is mediated by Fe atoms on the substrate surface [3]. The finding of quasicrystalline thin films of single elements and molecules opens an avenue for further investigation of the impact of the aperiodic atomic order over periodic order on the physical and chemical properties of materials.

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