scholarly journals Microstructure and Mechanical Properties of Electroplated Cu Thin Films

2000 ◽  
Vol 649 ◽  
Author(s):  
A.A. Volinsky ◽  
J. Vella ◽  
I.S. Adhihetty ◽  
V. Sarihan ◽  
L. Mercado ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Elastic Modulus ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Tensile Tests ◽  
Crystal Silicon ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTCopper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the adhesion-promoting barrier layers on <100> single crystal silicon wafers. Controlled Cu grain growth was achieved by annealing films in vacuum.The Cu film microstructure was characterized using Atomic Force Microscopy and Focused Ion Beam Microscopy. Elastic modulus of 110 to 130 GPa and hardness of 1 to 1.6 GPa were measured using the continuous stiffness option (CSM) of the Nanoindenter XP. Thicker films appeared to be softer in terms of the lower modulus and hardness, exhibiting a classical Hall-Petch relationship between the yield stress and grain size. Lower elastic modulus of thicker films is due to the higher porosity and partially due to the surface roughness. Comparison between the mechanical properties of films on the substrates obtained by nanoindentation and tensile tests of the freestanding Cu films is made.

Effect of environment on mechanical properties of micron sized beams of bone fabricated using FIB

2010 ◽  
Vol 1274 ◽  
Author(s):  
Asa H Barber ◽  
Ines Jimenez-Palomar
Keyword(s):  
Mechanical Properties ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Structural Features ◽  
Mechanical Tests ◽  
Length Scales ◽  
Bone Material ◽  
Force Microscopy ◽  
Atomic Force

AbstractBone is a complex material with structural features varying over many different length scales. Lamellae in bone are discrete units of collagen fibril arrays that are the dominant structural feature at length scales of a few microns. The mechanical properties of bone are importantly dependent on the synergy between the lamellae and structural features at other length scales. However, the mechanical properties at this micron level will be indicative of the bone material itself and ignores the structural and geometric organizations prevalent at larger length scales. The isolation of volumes of bone at the lamellar level requires precision cutting methodology and this paper exploits Focused Ion Beam (FIB) methods to mill small cantilever beams from bulk bone material. Importantly, FIB milling can only be performed in a relatively high vacuum environment. Atomic Force Microscopy (AFM) mechanical tests are therefore performed in two environments, high vacuum and air in order to assess the effects of vacuum on bone beam mechanical behaviour. Our results indicate that little difference in the bone beam elastic modulus is found from bending experiments at deflections up to 100nm in different environments.

Experimental Study on the Surface Cutting Mechanical Properties of Single Crystal Silicon in Micro-Nano Scale

2015 ◽  
Vol 1088 ◽  
pp. 779-782
Author(s):  
Xiao Jing Yang ◽  
Yong Li ◽  
Wei Xing Zhang
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Cutting Force ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Constant Load ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Impact

The experiment of cutting mechanical properties of single crystal silicon surface in the micro-nanoscale is researched using nanoindenter and atomic force microscopy. The result of the experiment shows that: in the constant load, the impact of different scratching velocity for single crystal silicon surface scratch groove width and chip accumulation volume are not big; but the cutting force and friction coefficient are not increases with the scratching velocity increases; when the scratching speed is certain, the size of load has a greater impact on the cutting mechanical properties of single crystal silicon surface, with the increase of the load, the cutting force increases, but the cutting force is not linearly growth.

Extending AFM Phase Image of Nanocomposite Structures to 3D using FIB

2012 ◽  
Vol 1421 ◽  
Author(s):  
Russell J. Bailey ◽  
Remco Geurts ◽  
Debbie J. Stokes ◽  
Frank de Jong ◽  
Asa H. Barber
Keyword(s):  
Phase Contrast ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polymer Nanocomposite ◽  
Three Dimensions ◽  
Phase Image ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mechanical Information ◽  
Nanocomposite Structures

ABSTRACTThe mechanical behavior of nanocomposites is critically dependent on their structural composition. In this paper we use Focused Ion Beam (FIB) microscopy to prepare surfaces from a layered polymer nanocomposite for investigation using phase contrast atomic force microscopy (AFM). Phase contrast AFM provides mechanical information on the surface examined and, by combining with the sequential cross-sectioning of FIB, can extend the phase contract AFM into three dimensions.

Mechanical Properties of Electroplated Copper Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Film Thickness ◽  
Yield Stress ◽  
Laser Scanning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Films ◽  
Electroplated Copper

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.

Fabrication of Ga-templates Using a Focused Ion Beam

2009 ◽  
Vol 1228 ◽  
Author(s):  
Hao Wang ◽  
Greg C. Hartman ◽  
Joshua Williams ◽  
Jennifer L. Gray
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Processing Conditions ◽  
New Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nitridation Process ◽  
Microscopy Characterization ◽  
Device Technology

AbstractThere are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

Study of Electrochemical Deposition of Copper and Microstructure Evolution in Fine Lines

1999 ◽  
Vol 562 ◽  
Author(s):  
Stephan Grunow ◽  
Deda Diatezua ◽  
Soon-Cheon Seo ◽  
Timothy Stoner ◽  
Alain E. KaloyerosI
Keyword(s):  
Electrochemical Deposition ◽  
Microstructure Evolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Process Window ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Underlying Mechanisms ◽  
Pure Cu

ABSTRACTAs computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.

High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy

1999 ◽  
Vol 17 (4) ◽  
pp. 1570 ◽  
Author(s):  
A. Olbrich ◽  
B. Ebersberger ◽  
C. Boit ◽  
Ph. Niedermann ◽  
W. Hänni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Structure-Function Correlative Microscopy of Peritubular and Intertubular Dentine

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1493 ◽  
Author(s):  
Tan Sui ◽  
Jiří Dluhoš ◽  
Tao Li ◽  
Kaiyang Zeng ◽  
Adrian Cernescu ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Volume Fraction ◽  
Ion Beam ◽  
Near Field ◽  
Structural Difference ◽  
Correlative Microscopy ◽  
Mineral Concentration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Backscattered Electron

Peritubular dentine (PTD) and intertubular dentine (ITD) were investigated by 3D correlative Focused Ion Beam (FIB)-Scanning Electron Microscopy (SEM)-Energy Dispersive Spectroscopy (EDS) tomography, tapping mode Atomic Force Microscopy (AFM) and scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) mapping. The brighter appearance of PTD in 3D SEM-Backscattered-Electron (BSE) imaging mode and the corresponding higher grey value indicate a greater mineral concentration in PTD (~160) compared to ITD (~152). However, the 3D FIB-SEM-EDS reconstruction and high resolution, quantitative 2D map of the Ca/P ratio (~1.8) fail to distinguish between PTD and ITD. This has been further confirmed using nanoscale 2D AFM map, which clearly visualised biopolymers and hydroxyapatite (HAp) crystallites with larger mean crystallite size in ITD (32 ± 8 nm) than that in PTD (22 ± 3 nm). Correlative microscopy reveals that the principal difference between PTD and ITD arises primarily from the nanoscale packing density of the crystallites bonded together by thin biopolymer, with moderate contribution from the chemical composition difference. The structural difference results in the mechanical properties variation that is described by the parabolic stiffness-volume fraction correlation function introduced here. The obtained results benefit a microstructure-based mechano-chemical model to simulate the chemical etching process that can occur in human dental caries and some of its treatments.

Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1088-1089
Author(s):  
A. Domenicucci ◽  
R. Murphy ◽  
D. Sadanna ◽  
S. Klepeis
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
High Dose ◽  
Threading Dislocation ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
High Temperature Anneal

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.

Sign in / Sign up

Export Citation Format

Share Document