S/D Engineering for Sub-100 nm MOSFET using Ultra Shallow Junction Formation Technique, Elevated S/D Structure and SALICIDE Technique

2002 ◽  
Vol 717 ◽  
Author(s):  
Kazuya Ohuchi ◽  
Kanna Adachi ◽  
Akira Hokazono ◽  
Yoshiaki Toyoshima
Keyword(s):  
High Performance ◽  
Process Integration ◽  
Chemical Vapor ◽  
Physical Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
Shallow Junction ◽  
Ultrashallow Junctions ◽  
Parasitic Resistance

AbstractSuppression of short channel effect (SCE) by utilizing the technology of formation of ultrashallow junctions is one of the important issues. The annealing process of implantation-damage that induces transient enhanced diffusion during a subsequent thermal process, such as low-pressure chemical vapor deposition (LPCVD) for gate sidewall spacer, should be optimized. To pursuit high performance of MOSFETs, parasitic resistance must be reduced with scaling. On the other hand, it is difficult to decrease the parasitic resistance in the region of contact junction, which is a function of physical constant such as Schottky barrier height of silicide materials and solid solubility of dopant. The elevated source/drain structure reduces parasitic resistance of contact junction due to reduction of resistance of diffusion beneath salicide materials. Cobalt salicide is widely used till 100nm node. However, cobalt salicide has disadvantage in the thermal budget for shallow junction and quantity of silicon consumption during silicidation. Nickel salicide is one of the candidates for successor of cobalt salicide to 70 nm node or above, because of its characteristics of low temperature formation, low silicon consumption and low contact resistivity on p+ junctions. In this paper, S/D engineering will be discussed from the viewpoint of the process integration of sub-100 nm physical gate length complementary metal-oxide-semiconductor field-effect transistor (CMOSFET) device.

Analysis and Simulation of a Low-Leakage Analog Single Gate and FinFET Circuits

2014 ◽  
Vol 13 (02) ◽  
pp. 1450012 ◽  
Author(s):  
Manorama Chauhan ◽  
Ravindra Singh Kushwah ◽  
Pavan Shrivastava ◽  
Shyam Akashe
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Low Power ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
State Dependency ◽  
Low Leakage

In the world of Integrated Circuits, complementary metal–oxide–semiconductor (CMOS) has lost its ability during scaling beyond 50 nm. Scaling causes severe short channel effects (SCEs) which are difficult to suppress. FinFET devices undertake to replace usual Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) because of their better ability in controlling leakage and diminishing SCEs while delivering a strong drive current. In this paper, we present a relative examination of FinFET with the double gate MOSFET (DGMOSFET) and conventional bulk Si single gate MOSFET (SGMOSFET) by using Cadence Virtuoso simulation tool. Physics-based numerical two-dimensional simulation results for FinFET device, circuit power is presented, and classifying that FinFET technology is an ideal applicant for low power applications. Exclusive FinFET device features resulting from gate–gate coupling are conversed and efficiently exploited for optimal low leakage device design. Design trade-off for FinFET power and performance are suggested for low power and high performance applications. Whole power consumptions of static and dynamic circuits and latches for FinFET device, believing state dependency, show that leakage currents for FinFET circuits are reduced by a factor of over ~ 10X, compared to DGMOSFET and ~ 20X compared with SGMOSFET.

Etching Effects of Nanotechnology Fabrication on CMOS Transistor Gate Wafer Manufacturing Process Integration

2010 ◽  
Vol 154-155 ◽  
pp. 938-941
Author(s):  
Chun Jen Weng
Keyword(s):  
Process Integration ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Fabrication Technology ◽  
Short Channel ◽  
Channel Effects ◽  
Cmos Transistor ◽  
Scaling Down ◽  
Wafer Manufacturing

As wafer nanotechnology gate is scaling down, the fabrication technology of gate spacer for transistor becomes more critical in manufacturing processes. Because wafer fabrication technologies, sidewall spacers play an important role in the control of short channel effects by offsetting ion implantation profiles from the edge of the gate. The present study is to overcome the fabrication processes limitations and proposed modified feasible etching processes integration on the formation processing for complementary metal oxide semiconductor nanofabrication process of gate spacer technology and electrical characteristics.

An Area and Energy Efficient RAM Cell Design in Quantum Dot Cellular Automata

2019 ◽  
Vol 16 (10) ◽  
pp. 4179-4187
Author(s):  
Amanpreet Sandhu ◽  
Sheifali Gupta
Keyword(s):  
Cellular Automata ◽  
Quantum Dot ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Quantum Dot Cellular Automata ◽  
Channel Effects

The Conventional Complementary Metal oxide semiconductor (CMOS) technology has been revolutionized from the past few decades. However, the CMOS circuit faces serious constraints like short channel effects, quantum effects, doping fluctuations at the nanoscale which limits them to further scaling down at nano meter range. Among various existing nanotechnologies, Quantum dot Cellular Automata (QCA) provides new solution at nanocircuit design. The technical advancement of the paper lies in designing a high performance RAM cell with less QCA cells, less occupational area and lower power dissipation characteristics. The design occupies 12.5% lower area, 16.6% lower input to output delay, and dissipates 18.26% lesser energy than the designs in the literature. The proposed RAMcell is robust due to lesser noise variations. Also it has less fabrication cost due to absence of rotated cells.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3680
Author(s):  
Jong-Gul Yoon
Keyword(s):  
Short Term Memory ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Information Storage ◽  
Oxide Semiconductor ◽  
Film Electrode ◽  
Retention Performance ◽  
Short Term ◽  
Neuromorphic Computing ◽  
Term Memory

Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable information storage at nanoscale in an analogue way and in-memory computing. Memristive devices with long-/short-term synaptic plasticity are expected to provide a more capable neuromorphic system compared to traditional Si-based complementary metal-oxide-semiconductor circuits. Here, compositionally graded oxide films of Al-doped MgxZn1−xO (g-Al:MgZnO) are studied to fabricate a memristive device, in which the composition of the film changes continuously through the film thickness. Compositional grading in the films should give rise to asymmetry of Schottky barrier heights at the film-electrode interfaces. The g-Al:MgZnO films are grown by using aerosol-assisted chemical vapor deposition. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the films show self-rectifying memristive behaviors which are dependent on maximum applied voltage and repeated application of electrical pulses. Endurance and retention performance tests of the device show stable bipolar resistance switching (BRS) with a short-term memory effect. The short-term memory effects are ascribed to the thermally activated release of the trapped electrons near/at the g-Al:MgZnO film-electrode interface of the device. The volatile resistive switching can be used as a potential selector device in a crossbar memory array and a short-term synapse in neuromorphic computing.

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

scholarly journals Performance Measures of Different Gate Oxide Materials in Gate All Around Fet

2020 ◽  
Vol 9 (2) ◽  
pp. 23-25
Keyword(s):  
High Performance ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Oxide Semiconductor ◽  
Oxide Materials ◽  
Performance Limits ◽  
Short Channel ◽  
Advanced Technique ◽  
And Performance

The classical planar Metal Oxide Semiconductor Field Effect Transistors (MOSFET) is fabricated by oxidation of a semiconductor namely Silicon. In this generation, an advanced technique called 3D system architecture FETs, are introduced for high performance and low power quality of devices. Based on the limitations of Short Channel Effect (SCE), Silicon (Si) FET cannot be scaled under 10nm. Hence various performing measures like methods, principles, and geometrics are done to upscale the semiconductor. CMOS using alternate channel materials like GE and III-Vs on substrates is a highly anticipated technique for developing nanowire structures. By considering these issues, in this paper, we developed a simulation model that provides accurate results basing on Gate layout and multi-gate NW FET's so that the scaling can be increased few nanometers long and performance limits gradually increases. The model developed is SILVACO that tests the action of FET with different gate oxide materials.

scholarly journals A Multiplexed Chemical Sensing CMOS Imager

2021 ◽  
Author(s):  
Di Wang ◽  
Fenni Zhang ◽  
Kyle Mallires ◽  
Vishal Tipparaju ◽  
Jingjing Yu ◽  
...  
Keyword(s):  
Chemical Sensing ◽  
High Performance ◽  
Health Management ◽  
Complementary Metal Oxide Semiconductor ◽  
Spot Size ◽  
Oxide Semiconductor ◽  
Colorimetric Sensing ◽  
Widespread Application ◽  
Cmos Imager ◽  
Cmos Chip

Abstract A miniaturized and multiplexed chemical sensing technology is urgently needed to empower mobile devices, Internet-of-Things (IoTs) and robots for various new applications. Here, we show that a complementary metal-oxide-semiconductor (CMOS) imager can be turned into a multiplexed colorimetric sensing chip by coating micron-scale colorimetric sensing spots on the imager surface. Each sensing spot contains chemical sensing materials and nanoparticles for colorimetric signal enhancement. The sensitivity is spot-size invariant, and high-performance chemical sensing can be achieved on sensing spot as small as ~ 10 µm. This great scalability combined with millions of pixels of a CMOS imager offers a promising platform for highly integrated chemical sensors. Moreover, the chemical CMOS chip can be readily integrated with mobile electronics. As a proof-of-concept, we have built a smartphone accessary based on this chemical CMOS chip for personal health management. We anticipate that this new platform will pave the way for the widespread application of chemical sensing, such as mobile health (mHealth), IoTs, electronic nose, and smart homes.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Extremely high-gain source-gated transistors

2019 ◽  
Vol 116 (11) ◽  
pp. 4843-4848 ◽  
Author(s):  
Jiawei Zhang ◽  
Joshua Wilson ◽  
Gregory Auton ◽  
Yiming Wang ◽  
Mingsheng Xu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Critical Factor ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Lengths

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a conventional Si transistor. These same devices demonstrate almost total immunity to negative bias illumination temperature stress, the foremost bottleneck to using oxide semiconductors in major applications, such as display drivers. Furthermore, devices fabricated with channel lengths down to 360 nm display no obvious short-channel effects, another critical factor for high-density integrated circuits and display applications. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance transistor with a semimetal-like indium tin oxide channel, the range and versatility of materials have been significantly broadened.

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